STMicroelectronics STGAP2SICSC

Overview

STGAP2SICSC from STMicroelectronics is a galvanically isolated single-channel gate driver IC optimized for SiC MOSFETs in high-speed, high-voltage half-bridge topologies. It delivers 4 A sink/source peak output current, 100 V/ns CMTI, 75 ns max input-output propagation delay, and integrates a dedicated Miller clamp pin (CLAMP), UVLO with 15.5 V turn-on threshold, and thermal shutdown at 170 °C - enabling robust switching control in 600–1200 V inverters for industrial motor drives.

For engineers reviewing the STGAP2SICSC datasheet, STGAP2SICSC pinout, STGAP2SICSC application, or STGAP2SICSC equivalent, key selection criteria include its SO-8W wide-body package with 8 mm creepage/clearance, dual-input logic interface with hysteresis, rail-to-rail output capability up to 26 V, and configurable operation modes (standby, safe-state, watchdog) critical for power conversion reliability and EMI resilience.

Technical Context

The STGAP2SICSC implements reinforced galvanic isolation per IEC 60747-17 (VIORM = 1.2 kV_PEAK) and UL 1577 (V_ISO = 3.5 kV_RMS), separating low-voltage control logic (VDD/GND/IN+/IN−) from high-side floating gate drive circuitry (VH/GNDISO/GOUT/CLAMP). Its dual-input architecture supports hardware interlocking to prevent cross-conduction, while deglitch filtering (20–40 ns) rejects noise-induced false triggering.

Two internal configurations are supported: one with single GOUT + CLAMP for Miller spike suppression in half-bridges, and another with separate GON/GOFF outputs for independent turn-on/turn-off resistor tuning. Both share identical protection features - UVLO on VH supply, thermal shutdown at 170 °C with 20 °C hysteresis, and standby mode reducing IQ to 40 µA (VDD) and 400 µA (VH).

Key Specifications

Pinout & Package

STGAP2SICSC is housed in a wide-body SO-8W package (8.7 × 8.0 × 2.4 mm) with 8 mm creepage and clearance, optimized for high-voltage isolation integrity and thermal dissipation (R_th(JA) = 120 °C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated SiC gate driver applications.

Compared with Si827x and UCC5870-Q1, STGAP2SICSC uniquely balances 4 A drive strength, integrated Miller clamp, and industrial-grade isolation certification in a cost-optimized SO-8W package - making it optimal for non-automotive, high-reliability SiC inverters where BOM simplification and proven field robustness are primary design goals.

Availability

STGAP2SICSC is available at Aetrix Electronics and suitable for industrial motor drives, SiC-based UPS systems, induction heating generators, and battery charging converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp-up.

Supply support for STGAP2SICSC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and analog components for industrial, automotive, and consumer markets.

STGAP2SICSC belongs to ST's STGAP family of isolated gate drivers - engineered specifically for wide-bandgap power devices, emphasizing SiC MOSFET compatibility, high-speed timing fidelity, and system-level safety integration in high-voltage power conversion.

FAQ

What is the purpose of the CLAMP pin on STGAP2SICSC?

The CLAMP pin provides an active Miller clamp function that monitors the gate voltage of the driven SiC MOSFET. When the gate voltage falls below 2.0 V (typical threshold), the internal clamp switch activates, creating a low-impedance path to GNDISO. This prevents unintended turn-on caused by Miller current during high dv/dt transitions in half-bridge configurations - eliminating need for external clamp diodes and improving reliability in fast-switching applications.

How does STGAP2SICSC enter and exit standby mode?

STGAP2SICSC enters standby when both IN+ and IN− are held high for ≥280 µs (t_STBY). In standby, outputs go to safe state (GOUT low, CLAMP active) and quiescent currents drop to 40 µA (VDD) and 400 µA (VH). To exit, inputs must transition to any non-"standby" combination for ≥280 ns (t_stbyfilt), then return to "standby" for 10–35 µs (t_WUP). Output resumes normal operation after 140 µs (t_awake) with full drive capability.

Does STGAP2SICSC support negative gate driving?

Yes - STGAP2SICSC supports negative gate driving via external circuitry. The VH pin supplies the positive gate voltage, while GNDISO serves as the floating reference. By adding a negative bias supply referenced to GNDISO (e.g., −5 V), the device can drive SiC MOSFET gates with bipolar voltage (e.g., +20 V / −5 V), improving turn-off speed and noise immunity. Layout guidelines in DS13402 recommend separate bypass capacitors and careful routing to maintain isolation integrity.

What safety certifications apply to STGAP2SICSC's isolation barrier?

STGAP2SICSC is certified to IEC 60747-17 (VDE 0884-17) for reinforced galvanic isolation with VIORM = 1.2 kV_PEAK, and recognized under UL 1577 with V_ISO = 3.5 kV_RMS (60 s). It also meets IEC 60664-1 for material group II, 8 mm creepage/clearance, CTI ≥ 400 V, and transient overvoltage rating VIOTM = 5.0 kV_PEAK. Certification number 40057398 confirms compliance for industrial equipment up to 1200 V systems.