STMicroelectronics STGAP2SICSNTR

Overview

STGAP2SICSNTR from STMicroelectronics is a galvanically isolated 4 A single-channel SiC MOSFET gate driver in narrow-body SO-8, featuring 4.8 kV_PK isolation, ±100 V/ns CMTI, and 75 ns max input-output propagation delay. It supports both separated-sink/source (GON/GOFF) and Miller Clamp (GOUT/CLAMP) configurations for half-bridge SiC power stages in industrial inverters and UPS systems.

For engineers reviewing the STGAP2SICSNTR datasheet, STGAP2SICSNTR pinout, STGAP2SICSNTR application, or STGAP2SICSNTR equivalent, key selection criteria include SiC-optimized UVLO thresholds (14.6–16.4 V turn-on), dual-input logic polarity control, thermal shutdown at 170 °C, and standalone Miller clamp with 1.3–2.6 V activation threshold.

Technical Context

This driver implements reinforced galvanic isolation via capacitive coupling, enabling safe operation across ±1700 V_DC input-to-output working voltage. Its dual-input architecture (IN+, IN−) supports hardware interlocking to prevent cross-conduction, while deglitch filtering (20–40 ns) rejects noise-induced false triggering.

The device integrates three protection layers: VH-supply UVLO with 750 mV hysteresis, junction thermal shutdown at 170 °C with 20 °C hysteresis, and active Miller clamp with 4 A sink capability and sub-120 mV low-level output. Standby mode reduces VDD and VH quiescent current to 40–65 µA and 400–550 µA respectively.

Key Specifications

Pinout & Package

Narrow-body SO-8 package (5.0 × 6.0 mm, 1.75 mm height) with 4 mm creepage/clearance, CTI ≥ 400 V, and UL 1577 recognition. Reinforced isolation barrier separates LV control (pins 1–4) from HV floating section (pins 5–8).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC gate driver applications.

Compared with Si827x and UCC5870-Q1, STGAP2SICSNTR delivers optimal balance of SiC-specific protection (integrated clamp, SiC-tuned UVLO), industrial-grade isolation (4.8 kVPK), and power efficiency (standby mode), all in compact SO-8 - making it ideal for cost-sensitive, high-volume industrial power converters.

Availability

STGAP2SICSNTR is available at Aetrix Electronics and suitable for industrial motor inverters, UPS systems, and SiC-based battery chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STGAP2SICSNTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and analog components for industrial, automotive, and consumer markets.

STGAP2SICSNTR belongs to ST's STGAP family of isolated gate drivers, engineered specifically for wide-bandgap power devices - emphasizing SiC-optimized UVLO, integrated Miller clamp, and high-CMTI isolation for next-generation power conversion.

FAQ

What is the difference between STGAP2SICSNTR and STGAP2SICSNCTR?

STGAP2SICSNTR uses the separated-output configuration (GON/GOFF pins), enabling independent optimization of turn-on and turn-off gate resistors. STGAP2SICSNCTR uses the single-output + Miller Clamp configuration (GOUT/CLAMP pins), integrating active Miller current suppression for half-bridge SiC applications. Both share identical SO-8 packaging and isolation specs, but differ in pin function mapping and internal routing.

Does STGAP2SICSNTR support bipolar gate driving?

Yes - the device supports unipolar (0 V to VH) and bipolar (−V_L to VH) gate driving via external negative bias generation on the isolated side. The GNDISO pin serves as the floating reference, allowing connection of a negative supply (e.g., −5 V) to enable enhanced dV/dt immunity and faster turn-off in high-side configurations.

How does the standby mode affect output behavior?

In standby mode - activated by holding both IN+ and IN− high for >200 µs - the driver forces outputs into safe state: GOFF remains actively ON, GON enters high-impedance, and CLAMP activates if present. Quiescent currents drop to ≤65 µA (VDD) and ≤550 µA (VH), reducing idle power without compromising fault-safe behavior.

Can STGAP2SICSNTR drive 1700 V SiC MOSFETs directly?

Yes - its 4.8 kV_PK isolation rating, ±1700 V_DC working voltage, and ±100 V/ns CMTI are validated for direct use with 1700 V SiC MOSFETs in industrial inverters. The 4 A drive strength, rail-to-rail outputs, and SiC-optimized UVLO ensure robust gate control without external level-shifting or buffering.