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STMicroelectronics STGAP2SM

Part No.:
STGAP2SM
Manufacturer:
STMicroelectronics
Category:
Isolators - Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSTGAP2SM.pdf
Description:
DGTL ISO 1.7KV 1CH GATE DVR 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,900

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Product details

Overview

STGAP2SM from STMicroelectronics is a galvanically isolated 4 A single gate driver IC designed for high-voltage half-bridge and inverter topologies. It features separated GON/GOFF outputs, 75 ns max input-output propagation delay, 100 V/ns CMTI, and rail-to-rail 4 A sink/source capability at 25°C with UVLO, thermal shutdown, and standby mode - enabling robust motor control in industrial inverters up to 1700 V.

For engineers reviewing the STGAP2SM datasheet, STGAP2SM pinout, STGAP2SM application, or STGAP2SM equivalent, this device supports precise PWM timing in high-noise environments, independent turn-on/turn-off optimization via external gate resistors, and safe-state behavior during supply faults - critical for industrial motor drives, UPS, and PFC designs.

Technical Context

The STGAP2SM implements reinforced galvanic isolation between low-voltage logic (VDD/GND) and high-side gate drive (VH/GNDISO), certified to UL 1577 (4000 VPEAK) and VDE 0884-17 (3200 VPEAK production test). Its dual-input architecture (IN+, IN−) enables hardware interlocking to prevent cross-conduction, while deglitch filtering (20–40 ns) rejects transient noise on control lines.

It operates with bipolar or unipolar gate driving configurations, supports VH supply from 9.6 V to 26 V, and integrates active Miller clamp only in the STGAP2SC variant - the STGAP2SM uses separate GON/GOFF pins for independent gate resistor tuning, delivering <20 ns pulse width distortion and 30 ns rise/fall times into 4.7 nF load.

Key Specifications

Parameter Value and Actual Design Meaning
Isolation Voltage 4000 VPEAK (UL 1577), 3200 VPEAK (1 s production test) - ensures safety compliance in 1700 V rail systems
Output Drive Current 4 A sink/source @25°C - sufficient to drive IGBTs/MOSFETs up to 1200 V class with fast switching
Propagation Delay 75 ns max (tDon/tDoff) - enables >1 MHz PWM control with tight timing margins
CMTI 100 V/ns - maintains signal integrity in high-dV/dt motor drive and inverter environments
VH Operating Range 9.6 V to 26 V - supports both 15 V and 20 V gate bias for SiC and high-threshold IGBTs
UVLO Threshold VHon = 9.1 V typ, VHoff = 8.4 V typ, hysteresis = 0.75 V - prevents erratic switching during brown-out
Standby Quiescent Current IQHSBY = 550 µA max, IQDDSBY = 65 µA max - reduces idle power in always-on industrial systems

Pinout & Package

Narrow-body SO-8 package (ECOPACK®, 5.0 mm × 6.0 mm, 1.75 mm height) with reinforced creepage/clearance ≥4 mm and CTI ≥400 V - optimized for high-voltage PCB layout and thermal dissipation (RthJA = 123 °C/W).

Pin/Terminal Circuit Role Design Meaning
1 VDD Logic supply input 5 V tolerant TTL/CMOS interface supply; requires local 100 nF + 1–10 µF bypassing
2 IN+ Active-high logic input Drives GON when high and GOFF low; used with IN− for HW interlock and truth-table control
3 IN− Active-low logic input Complementary to IN+; enables safe default state (GOFF ON) when both inputs high (standby)
4 GND Logic ground reference Return path for VDD and logic inputs; must be separated from GNDISO by isolation barrier
5 VH High-side gate supply Positive rail for gate drive output; UVLO monitored here; supports up to 26 V
6 GON Source output terminal 4 A capable high-side gate pull-up; configured with external RON for controlled turn-on
7 GOFF Sink output terminal 4 A capable low-side gate pull-down; configured with external ROFF for controlled turn-off
8 GNDISO Isolated gate drive ground Reference for VH, GON, GOFF; forms floating section; no conductive plane allowed beneath

Key Features

Feature Design Value
Separated GON/GOFF outputs Enables independent optimization of turn-on and turn-off timing via dedicated gate resistors - critical for minimizing switching losses in SiC/IGBT half-bridges
Hardware interlock via IN+/IN− Prevents simultaneous high-side/low-side conduction during controller fault - eliminates shoot-through risk without software dependency
Thermal shutdown protection Triggers at TJ = 170 °C with 20 °C hysteresis - protects against overtemperature failure in sealed enclosures or high ambient conditions
Standby mode activation Entered by holding IN+ = IN− = HIGH for >280 µs; reduces total quiescent current to <615 µA - extends uptime in battery-backed or energy-sensitive systems
Safe-state behavior Automatically forces GOFF ON / GON high-Z during VDD or VH undervoltage, power-up, or watchdog timeout - ensures fail-safe gate voltage during faults

Applications

Industrial Motor Inverters UPS Power Stages

Use Scenario: Driving 600–1200 V IGBTs in 3-phase variable-frequency drives for pumps, compressors, and conveyors.

IC Role / Device Role / Timing Role: Isolated gate driver providing independent turn-on/turn-off control and hardware interlock to prevent shoot-through in high-power half-bridge legs.

Use Value: 75 ns propagation delay and <20 ns pulse width distortion enable precise 20 kHz PWM timing, reducing torque ripple and acoustic noise.

Use Scenario: Controlling bidirectional DC-AC and AC-DC conversion stages in online double-conversion UPS systems.

IC Role / Device Role / Timing Role: Galvanically isolated gate driver managing high-side switches in H-bridge and PFC boost stages under rapid load transients.

Use Value: 100 V/ns CMTI and reinforced isolation ensure reliable operation during grid surges and neutral-ground shifts common in datacenter power infrastructure.

PFC Boost Converters Induction Heating Systems

Use Scenario: Driving high-voltage MOSFETs/IGBTs in continuous conduction mode (CCM) PFC front-ends for server PSUs and industrial SMPS.

IC Role / Device Role / Timing Role: Gate driver delivering rail-to-rail 4 A output to sustain fast switching of wide-bandgap devices at >100 kHz.

Use Value: 26 V maximum VH supports enhanced gate drive for GaN HEMTs and high-threshold SiC MOSFETs, improving efficiency above 98%.

Use Scenario: Controlling resonant half-bridge IGBTs in solid-state induction cooktops and industrial heating generators.

IC Role / Device Role / Timing Role: High-CMTI isolated driver enabling stable operation under extreme dV/dt (>5 kV/µs) generated by ZVS/ZCS resonant tank ringing.

Use Value: Safe-state behavior during UVLO and thermal shutdown prevents uncontrolled IGBT turn-on that could damage resonant capacitors or coils.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si8271BD-IS Single-channel, 4 A sink/source, 2.5 kVRMS isolation, 80 ns propagation delay, no separate GON/GOFF pins - integrated output Lacks independent turn-on/turn-off tuning; requires external Miller clamp circuitry for half-bridge use Preferred where board space is constrained and gate resistor optimization is secondary to integration
UCC5390SCD 4 A sink/source, 5 kVRMS isolation, 55 ns propagation delay, integrated Miller clamp, but no dual-input interlock logic Relies on controller-level dead-time management instead of hardware interlock - increases firmware complexity Chosen when ultra-low propagation delay and integrated clamp outweigh need for HW shoot-through protection

Compared with Si8271BD-IS and UCC5390SCD, the STGAP2SM uniquely combines separated GON/GOFF outputs with dual-input hardware interlock and full safe-state behavior - making it optimal for industrial inverters where reliability under fault conditions and gate timing flexibility are non-negotiable.

Availability

STGAP2SM is available at Aetrix Electronics and suitable for industrial motor drives, UPS systems, and PFC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for ISO 9001-certified production.

Supply support for STGAP2SM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and analog components for industrial, automotive, and consumer markets.

The STGAP2SM belongs to ST's STGAP family of reinforced-isolation gate drivers, engineered specifically for high-reliability industrial motor control and power conversion systems demanding functional safety, high CMTI, and fail-safe operation.

FAQ

What is the difference between STGAP2SM and STGAP2SCM?

The STGAP2SM uses separated GON and GOFF outputs for independent gate resistor control, while STGAP2SCM integrates a single GOUT pin with an active Miller clamp (CLAMP pin) to suppress gate spikes in half-bridge configurations. They share identical isolation rating, CMTI, and thermal protection, but differ in pinout and internal output architecture - not interchangeable without PCB redesign.

Does STGAP2SM support negative gate driving?

Yes - the STGAP2SM supports negative gate driving when configured with a split VH supply (e.g., +15 V and −5 V referenced to GNDISO), enabling enhanced noise immunity and improved IGBT turn-off robustness. The datasheet provides explicit schematics for bipolar gate drive using external level-shifting components and dual decoupling capacitors.

How does the standby mode affect output behavior?

In standby mode (activated by holding IN+ = IN− = HIGH for >280 µs), the STGAP2SM forces GOFF into active-low state, places GON in high-impedance, and reduces VDD and VH quiescent current to 65 µA and 550 µA respectively. Outputs remain in this safe state until valid input transitions occur, ensuring zero unintended switching during idle periods.

What layout practices maximize CMTI performance?

To maximize CMTI, place 100 nF ceramic capacitors directly between VDD–GND and VH–GNDISO with minimal trace length; avoid routing noisy traces (e.g., HV bus, gate loops) near IN+/IN−; maintain ≥4 mm clearance/creepage across isolation barrier; and eliminate copper pours or vias beneath the SO-8 body - all per ST's DS12541 layout guidelines.

STGAP2SM Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Magnetic Coupling
Number of Channels:
1
Voltage - Isolation:
1700VDC
Common Mode Transient Immunity (Min):
100V/ns
Propagation Delay tpLH / tpHL (Max):
100ns, 100ns
Pulse Width Distortion (Max):
20ns
Rise / Fall Time (Typ):
30ns, 30ns
Current - Output High, Low:
4A, 4A
Current - Peak Output:
-
Voltage - Forward (Vf) (Typ):
-
Current - DC Forward (If) (Max):
-
Voltage - Output Supply:
9.6V ~ 26V
Grade:
-
Qualification:
-
Operating Temperature:
-40°C ~ 125°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Approval Agency:
-

STGAP2SM FAQ

1.How can I place an order for STGAP2SM through Aetrix?

Please submit a Request for Quotation (RFQ) for STGAP2SM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGAP2SM reliable?

The price and inventory of STGAP2SM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGAP2SM is usually 5 days.

3.What payment methods are accepted for STGAP2SM?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGAP2SM transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGAP2SM?

STGAP2SM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGAP2SM order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGAP2SM?

For technical support, including STGAP2SM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGAP2SM requirements.

6.How does Aetrix verify that STGAP2SM is sourced from the original manufacturer or authorized distributors?

All STGAP2SM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGAP2SM meets industry standards.

7.What is the process for return or replacement of STGAP2SM?

All STGAP2SM units undergo pre-shipment inspection (PSI). If there is an issue with STGAP2SM, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGAP2SM part is unused and in its original packaging.

Return procedure for STGAP2SM:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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