STMicroelectronics STHV200Q

Overview

STHV200Q from STMicroelectronics is a dual-channel high-voltage ultrasound driver IC integrating independent linear and pulser output stages sharing a common XDCR node. It delivers ±100 V supply operation, 3 A linear saturation peak current, 20 MHz gain-bandwidth at 39 dB, and supports PW/CW/elastography modes for medical imaging transducers.

For engineers reviewing the STHV200Q datasheet, STHV200Q pinout, STHV200Q application, or STHV200Q equivalent, key selection criteria include programmable gain (24–39 dB), TR switch on-resistance (9.8 Ω), active clamp capability (1 A), SPI-configurable registers, and HV SOI latch-up immunity in QFN-7×7-48 packaging.

Technical Context

The STHV200Q implements two fully independent high-voltage channels, each with a non-inverting linear op-amp (24/32.5/36/39 dB gain) and a half-bridge pulser (0.5–2 A programmable saturation current). Bandwidth reaches 20 MHz at max gain and 25 MHz at min gain, with turn-on/off times of 1.8 µs and 0.6 µs respectively.

It integrates a real-to-zero active clamp (1 A), TR switch (9.8 Ω R_ON, no DC consumption), freewheeling diode protection, anti-memory discharge circuitry, and auto-diagnostic functions-including thermal, short-circuit, undervoltage, and SPI communication fault detection-reported via a single interrupt pin.

Key Specifications

Pinout & Package

STHV200Q is housed in a thermally enhanced QFN-7×7 mm, 48-lead package with exposed thermal pad (EP), rated for high-power ultrasound operation and optimized for low thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage ultrasound transmitter applications.

Compared with TX7332 and AD9410, STHV200Q uniquely combines dual-channel ±100 V linear+pulser integration, real-to-zero clamp, TR multiplexing, and SPI-diagnostic coverage - enabling compact, high-fidelity, safety-certifiable ultrasound front-ends without external HV support circuitry.

Availability

STHV200Q is available at Aetrix Electronics and suitable for medical ultrasound imaging, industrial NDT systems, and piezoelectric actuator control requiring stable component supply, long-term lifecycle assurance, and traceable high-reliability sourcing.

Supply support for STHV200Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and analog/mixed-signal devices for automotive, industrial, and medical markets.

The STHV series targets high-voltage ultrasound front-ends, emphasizing monolithic integration of linear, pulser, clamp, and TR functions to replace multi-chip solutions in portable and high-channel-count imaging systems.

FAQ

What is the maximum safe operating temperature for STHV200Q?

The STHV200Q incorporates thermal protection that triggers an interrupt and shuts down output stages when junction temperature exceeds 150 °C. Its QFN-7×7-48 package features an exposed thermal pad designed for ≤2.5 °C/W junction-to-board thermal resistance under standard PCB layout conditions (2-layer 2 oz Cu, 4 thermal vias).

Can STHV200Q drive capacitive loads above 5 nF?

Yes - the STHV200Q's output stage is rated for loads up to 10 nF with stable operation. For loads >5 nF, the datasheet recommends reducing slew rate via external gate resistors on pulser MOSFETs and limiting linear gain to ≤32.5 dB to maintain phase margin and prevent oscillation.

Does STHV200Q require external level shifters for SPI communication?

No - the STHV200Q accepts standard 3.3 V logic-level SPI signals (SCLK, SDI, CS, SDO) directly. All digital I/Os are 3.3 V tolerant with internal clamping diodes, eliminating need for external level shifters even when interfacing with 1.8 V or 5 V microcontrollers.

How does the anti-memory circuit function during Clamp mode?

During active Clamp state, the anti-memory circuit discharges internal node capacitances - including op-amp input stages and pulser bootstrap capacitors - using dedicated low-leakage paths. This prevents residual charge accumulation that could cause baseline offset or delayed settling in subsequent transmit cycles, especially critical in CW and elastography modes.