STMicroelectronics STMPS2151MTR

Overview

STMPS2151MTR from STMicroelectronics is a 500 mA active-high enable, high-side N-channel MOSFET power switch in SOT23-5L package, featuring 90 mW power dissipation capability, thermal and short-circuit protection with open-drain FAULT output, and undervoltage lockout (UVLO) for robust power distribution in capacitive-load applications such as USB ports and peripheral power rails.

For engineers reviewing the STMPS2151MTR datasheet, STMPS2151MTR pinout, STMPS2151MTR application, or STMPS2151MTR equivalent, key selection criteria include enable polarity (active-high), current limit threshold (500 mA), R_ON (135 mΩ at 5 V), fault blanking duration (10 ms), and thermal shutdown recovery behavior.

Technical Context

The STMPS2151MTR integrates a logic-controlled high-side N-MOSFET with internal current limiting, thermal shutdown, and UVLO circuitry. It operates across 2.7–5.5 V input range and delivers up to 500 mA continuous output current while maintaining CMOS/TTL-compatible EN input and open-drain FAULT signaling.

Its protection architecture includes 10 ms fault blanking for transient overloads, immediate FAULT assertion for die overtemperature (>135 °C) and UVLO events, and reverse-current blocking when disabled. The device enters constant-current mode during overcurrent, then shuts down thermally if junction temperature exceeds 135 °C, auto-recovering upon cooling below 125 °C.

Key Specifications

Pinout & Package

SOT23-5L package: compact 5-pin surface-mount outline with 1.3 mm × 2.9 mm footprint, 1.45 mm height, and 0.95 mm pitch; optimized for space-constrained USB and portable power rail designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side power switch applications.

Compared with TCK107AG and TPS22922DNYR, the STMPS2151MTR uniquely integrates FAULT reporting, 10 ms fault blanking, thermal shutdown, and UVLO in a single SOT23-5L package-enabling self-contained, standards-compliant power switching without external components.

Availability

STMPS2151MTR is available at Aetrix Electronics and suitable for USB power management, industrial sensor node control, portable medical sub-rails, and automotive BCM auxiliary loads requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STMPS2151MTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with broad industrial and consumer reach.

The STMPS series targets robust, integrated high-side power switches for applications exposed to heavy capacitive loads and short circuits-designed specifically for USB, industrial I/O, and battery-powered systems demanding protection autonomy and small form factor.

FAQ

What is the maximum allowable ambient temperature for continuous 500 mA operation in SOT23-5L package?

At 500 mA and 5 V input, the STMPS2151MTR dissipates 33.8 mW (I²R). With SOT23-5L thermal resistance of 191 °C/W, the junction-to-ambient rise is ~6.5 °C. Given max junction temperature of 125 °C, maximum ambient temperature is 118.5 °C-verified per Table 4 in the datasheet under recommended operating conditions.

Does the FAULT pin require an external pull-up resistor?

Yes-the FAULT pin is open-drain and requires an external pull-up resistor (typically 4.7–10 kΩ to V_CC) to generate a valid logic-high level when inactive. This allows wired-OR fault aggregation across multiple switches and compatibility with 1.8 V, 3.3 V, or 5 V MCU I/O voltages.

Can STMPS2151MTR safely drive a 1000 µF capacitive load at 5 V?

Yes-its 10 ms fault blanking window accommodates inrush currents from 1000 µF loads charged at 5 V (peak I_INRUSH ≈ 5 A for <100 ns, decaying exponentially). The device remains in constant-current mode during initial charge, avoiding FAULT assertion unless overload persists beyond blanking time.

How does reverse-current blocking behave when V_OUT > V_IN and EN = low?

When EN = low (switch OFF) and V_OUT > V_IN, the internal N-MOSFET body diode is reverse-biased and the gate is held at GND, ensuring Hi-Z output state and blocking reverse current flow. This behavior is explicitly confirmed in Section 3.4 "Reversed current blocking" of the datasheet.