STMicroelectronics STN2580

Overview

STN2580 from STMicroelectronics is a high-voltage fast-switching NPN power transistor in SOT-223 package, rated for V_CEO = 400 V, I_C = 1 A, and V_CE(sat) = 1 V at I_C = 1 A / I_B = 0.2 A. It features 140 ns rise time, 4 µs storage time, and operates up to T_J = 150 °C, designed specifically for lighting ballasts and low-cost switch-mode power supplies.

For engineers reviewing the STN2580 datasheet, STN2580 pinout, STN2580 application, or STN2580 equivalent, key selection criteria include safe operating area (RBSOA) width under inductive switching, V_CES = 800 V capability for voltage margin, thermal resistance R_thJA = 78 °C/W on 1 cm² PCB, and cellular emitter structure enabling fast turn-off with robust secondary breakdown immunity.

Technical Context

This device uses high-voltage multi-epitaxial planar technology to achieve fast switching while sustaining medium-voltage operation. Its cellular emitter layout and planar edge termination jointly optimize trade-offs between switching speed (t_r = 140 ns, t_s = 4 µs) and ruggedness across the reverse-biased safe operating area (RBSOA).

The transistor supports resistive-load switching at V_CC = 200 V with I_C = 0.3 A, using ±20 mA / −50 mA base drive. Its DC current gain h_FE ranges from 60 to 100 at I_C = 250 mA and V_CE = 5 V, ensuring stable biasing in linear and saturated switching modes.

Key Specifications

Pinout & Package

SOT-223 package with exposed collector tab (Pin 3) for thermal and electrical connection; standard 4-pin configuration with emitter (Pin 1), base (Pin 2), collector (Pin 3), and collector tab (Pin 4, internally connected to Pin 3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching transistor applications.

Compared with BUJ302B and BDW93C, STN2580 uniquely balances 400 V capability, 1 A rating, and 4 µs storage time in a low-cost SOT-223 package-making it optimal for cost-constrained, medium-power AC-line-connected lighting and adapter designs where thermal budget permits 78 °C/W.

Availability

STN2580 is available at Aetrix Electronics and suitable for fluorescent electronic ballasts, compact fluorescent lamp (CFL) drivers, and low-cost AC-DC adapters requiring stable component supply and long-term manufacturing continuity.

Supply support for STN2580 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, analog, MEMS, and microcontroller solutions for industrial, automotive, and consumer markets.

The STN2580 belongs to ST's high-voltage bipolar transistor product line, engineered specifically for cost-sensitive, medium-power switching applications in lighting and offline power conversion where ruggedness and manufacturability outweigh ultra-high-speed or ultra-low-loss requirements.

FAQ

Is STN2580 suitable for use in 230 VAC-powered LED drivers?

Yes - STN2580 supports V_CEO = 400 V and V_CES = 800 V, making it appropriate for 230 VAC-derived DC bus voltages (typically 325 V peak). Its RBSOA and 150 °C T_J(max) allow reliable operation in enclosed LED streetlight drivers with natural convection cooling.

What is the recommended PCB layout for thermal performance?

Mount the SOT-223 package with Pin 3 and Pin 4 (collector tab) soldered to a minimum 1 cm² copper pour on the top layer, connected via ≥4 thermal vias to internal or bottom-layer ground planes. This achieves the specified R_thJA = 78 °C/W and prevents thermal derating below 1 A.

Can STN2580 replace a MOSFET in a flyback converter?

It can functionally replace low-frequency, low-duty-cycle MOSFETs in <100 kHz flyback designs, but requires base drive circuitry instead of gate drive. Its 1 V V_CE(sat) gives comparable conduction loss to a 1 Ω R_DS(on) MOSFET at 1 A, though switching losses differ due to minority-carrier behavior.

Does STN2580 have built-in protection features like overtemperature shutdown?

No - STN2580 is a discrete bipolar transistor without integrated protection. System-level safeguards (e.g., base current limiting, external thermal cutoff, or current-sense resistors) must be implemented to prevent secondary breakdown or thermal runaway under overload conditions.