STMicroelectronics STPTIC-82F1M6

Overview

STPTIC-82F1M6 from STMicroelectronics is an 8.2 pF Parascan™ tunable integrated capacitor using barium strontium titanate (BST) dielectric, designed for RF antenna matching networks in multi-band LTE/WCDMA/GSM mobile phones. It delivers a 3.5:1 tuning range (C_2V/C_20V), +36 dBm input power handling, Q ≥ 45 at 1.8 GHz, and operates from DC to 3 GHz with 2–20 V analog bias control.

For engineers reviewing the STPTIC-82F1M6 datasheet, STPTIC-82F1M6 pinout, STPTIC-82F1M6 application, or STPTIC-82F1M6 equivalent, key selection criteria include tuning linearity, RF power robustness, leakage current (<100 nA at 20 V), transition time (100–135 µs), and compatibility with STHVDAC-series high-voltage control ICs in compact µQFN-6L packaging.

Technical Context

The STPTIC-82F1M6 implements a shunt/series configurable BST-based varactor structure, enabling open-loop adaptive impedance matching without closed-loop feedback. Its DC-biased RF path supports simultaneous high-frequency operation (up to 3 GHz) and high linearity, evidenced by IP3 of 70 dBm at 20 V bias and harmonic suppression ≤ –45 dBm.

It functions as a voltage-controlled passive element-no internal logic or digital interface-where capacitance is monotonically tuned via analog DC bias (2–20 V). The device requires external DC blocking on the bias line and operates within –30 °C to +85 °C ambient, with thermal derating above +100 °C device temperature.

Key Specifications

Pinout & Package

STPTIC-82F1M6 is housed in a lead-free, ECOPACK®2-compliant µQFN-6L package (1.2 × 1.6 × 0.9 mm), with wettable flank side walls for automated optical inspection. The package integrates DC bias isolation and RF port symmetry for balanced matching network integration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar tunable capacitor applications.

Compared with QM33102 and BGT60TR13D, STPTIC-82F1M6 offers superior Q-factor and tighter capacitance tolerance (±10%), making it preferred for high-efficiency antenna matching where insertion loss and harmonic generation are critical.

Availability

STPTIC-82F1M6 is available at Aetrix Electronics and suitable for cellular antenna matching, multi-band LTE front-end tuning, GSM/WCDMA diversity receive, and 5G sub-6 GHz beamforming applications requiring stable component supply and full production traceability.

Supply support for STPTIC-82F1M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and mobile power-efficient analog and RF solutions.

The STPTIC series was developed to enable adaptive RF front-end architectures in space-constrained mobile devices, specifically targeting antenna efficiency optimization through high-linearity, high-power tunable capacitance.

FAQ

What is the recommended PCB land pattern for STPTIC-82F1M6?

The µQFN-6L footprint requires metal-defined pads (250 × 230 µm for RF1, 250 × 500 µm for RF2, 200 × 180 µm for DC BIAS), with solder mask openings 25 µm larger than copper. A 0.25 mm stencil aperture and controlled reflow profile (peak 240–245 °C, 60 s above 220 °C) ensure reliable solder joint formation and coplanarity.

Can STPTIC-82F1M6 be used in series configuration with other capacitors?

Yes-its symmetrical RF1/RF2 and RF2/RF1 pin pairs support both series and shunt configurations. In series mode, it functions as a tunable series capacitor between PA output and antenna switch; measured IP3 remains ≥70 dBm at 20 V bias, confirming suitability for transmit-path linearity-critical roles.

Does STPTIC-82F1M6 require external DC blocking on the RF ports?

No-DC blocking is implemented internally; the RF ports are AC-coupled by design. However, the DC BIAS pin (A1) must be externally decoupled with a 100 nF ceramic capacitor to ground and isolated from RF paths using a ferrite bead or high-impedance trace to prevent RF leakage into the bias network.

How does temperature affect capacitance stability in STPTIC-82F1M6?

Capacitance drift is specified as ±5% over –30 °C to +85 °C ambient at constant bias voltage. At 20 V bias, C_20V shifts <±0.3 pF from 25 °C to 85 °C, verified per Table 4 test conditions. No active temperature compensation is required for typical handset operating profiles.