STMicroelectronics STW13009

Overview

STW13009 from STMicroelectronics is a high-voltage, fast-switching NPN power transistor in TO-247 package, rated for 400 V V_CEO, 12 A continuous collector current, and 125 W total dissipation at T_c = 25°C. It employs hollow emitter structure and multi-epitaxial planar technology to achieve 1.6 µs storage time and 60 ns fall time under 250 V inductive switching, targeting primary-side switching in offline SMPS.

For engineers reviewing the STW13009 datasheet, STW13009 pinout, STW13009 application, or STW13009 equivalent, key selection criteria include V_CEO ≥ 400 V, I_C ≥ 12 A, t_s/t_f ≤ 2.5 µs/110 ns at 125 V, R_thj-case ≤ 1.0 °C/W, and TO-247 mechanical compatibility with heatsink mounting.

Technical Context

The STW13009 uses high-voltage multi-epitaxial planar construction with a hollow emitter geometry to reduce minority carrier storage and accelerate turn-off. Its V_CEO(sus) = 400 V at I_C = 10 mA confirms ruggedness under pulsed inductive loads, while t_s = 1.6 µs and t_f = 60 ns (V_CC = 250 V, L = 200 µH) validate fast-switching capability for <100 kHz SMPS topologies.

DC current gain is pre-selected into Group L (h_FE = 15–23 at I_C = 5 A, V_CE = 5 V) or Group H (h_FE = 28–36), with V_CE(sat) = 0.85 V at I_C = 4 A/I_B = 0.8 A and R_thj-case = 1.0 °C/W enabling thermally constrained designs.

Key Specifications

Pinout & Package

STW13009 is housed in a TO-247 package with isolated metal tab (collector-connected), standardized for high-power thermal and mechanical mounting. Pin 1 = Base, Pin 2 = Collector (tab), Pin 3 = Emitter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.

Compared with BU508A and MJE13009, STW13009 delivers superior switching speed (1.6 µs t_s) at equal 400 V/12 A rating, enabling higher-frequency, cooler-running SMPS designs without sacrificing voltage safety margin.

Availability

STW13009 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial UPS inverters, LED driver bulk switches, and telecom boost pre-regulators requiring stable component supply, long-lifecycle availability, and consistent parametric performance across production batches.

Supply support for STW13009 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for industrial, automotive, and consumer markets.

The STW13009 belongs to ST's high-voltage power transistor product line, engineered specifically for reliable, high-efficiency switching in offline power conversion systems up to 500 W.

FAQ

Is STW13009 RoHS-compliant and lead-free?

Yes, STW13009 is manufactured in ECOPACK® packaging with lead-free second-level interconnect, compliant with RoHS Directive 2011/65/EU and JEDEC Standard JESD97. The inner box label marks the interconnect category, and soldering profiles follow ST's published reflow guidelines.

What is the maximum safe operating area (SOA) limitation at 100°C case temperature?

At T_c = 100°C, the SOA is limited by secondary breakdown to 250 V × 4 A (DC) or 125 V × 8 A (pulsed, t ≤ 10 ms). Derating follows the curve in Figure 3: P_tot drops linearly from 125 W at 25°C to 0 W at 150°C case temperature.

Can STW13009 replace MJE13009 in existing designs without layout changes?

Yes, STW13009 shares identical TO-247 footprint, pinout (B-C-E), and voltage/current ratings with MJE13009. However, its 1.6 µs storage time (vs. 2.5 µs) may require minor gate drive optimization to avoid overvoltage spikes during faster turn-off in inductive circuits.

Does STW13009 have avalanche ruggedness rating?

No, STW13009 datasheet does not specify unclamped inductive switching (UIS) or avalanche energy rating. It is rated for V_CEO(sus) = 400 V under pulsed conditions (300 ms, ≤1.5% duty cycle), but external snubbers or clamping circuits are required for inductive load protection beyond this specification.