onsemi SZMMSZ4707T1G

Overview

SZMMSZ4707T1G from onsemi is a 20 V nominal Zener voltage regulator diode in SOD−123 package, rated for 500 mW power dissipation at 75°C, with 50 µA test current (IZT), 0.01 µA reverse leakage at 15.2 V, and ±5% Zener voltage tolerance. It serves as a precision voltage reference or overvoltage clamp in low-power analog sensor interfaces and microcontroller I/O protection circuits.

For engineers reviewing the SZMMSZ4707T1G datasheet, pinout, applications, or equivalent options, key selection criteria include its 20 V nominal Zener voltage, ultra-low 0.01 µA leakage at VR = 15.2 V, 500 mW FR−5 board rating, SOD−123 footprint compatibility, and AEC−Q101 qualification for automotive use.

Technical Context

This device operates as a two-terminal, silicon planar Zener diode optimized for stable reverse-bias voltage regulation. Its 20 V nominal Zener voltage falls within the positive temperature coefficient range (>5 V), exhibiting +12.5 mV/°C typical TC per Figure 1 of the datasheet.

The SOD−123 package enables automated placement with cathode band marking, supports 260°C reflow for 10 seconds, and delivers 340°C/W junction-to-ambient thermal resistance. It is Pb−Free, RoHS compliant, and qualified to AEC−Q101 for automotive applications.

Key Specifications

Pinout & Package

SOD−123 is a 2-lead surface-mount plastic package with cathode indicated by a polarity band. The case is void-free, thermosetting, UL 94 V−0 rated, and corrosion-resistant for reliable soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with BZX84-C20LT1G and MMSZ5248B-TP, the SZMMSZ4707T1G offers superior leakage performance (0.01 µA vs. ≥0.1 µA), AEC−Q101 qualification, and identical SOD−123 footprint-making it the preferred choice for automotive and long-life battery systems requiring minimal standby current.

Availability

SZMMSZ4707T1G is available at Aetrix Electronics and suitable for automotive sensor reference, microcontroller I/O clamp, and low-power battery monitor applications requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SZMMSZ4707T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, and IoT applications.

The MMSZ4xxxT1G/SZMMSZ4xxxT1G series was designed specifically for compact, high-reliability Zener regulation in space-constrained and mission-critical systems-including automotive ECUs and industrial sensors-where low leakage, AEC−Q101 compliance, and SOD−123 manufacturability are essential.

FAQ

What is the nominal Zener voltage and tolerance of SZMMSZ4707T1G?

The SZMMSZ4707T1G has a nominal Zener voltage of 20 V with a tolerance of ±5%, meaning its actual Zener voltage falls between 19.0 V and 21.0 V when tested at IZT = 50 µA and TA = 25°C. This specification is confirmed in the Electrical Characteristics table on page 3 of the official onsemi datasheet. The SZMMSZ4707T1G achieves this stability through precise silicon doping and process control.

Is SZMMSZ4707T1G qualified for automotive applications?

Yes, SZMMSZ4707T1G is AEC−Q101 qualified and PPAP capable, as explicitly stated in the Features section of the onsemi datasheet. The "SZ" prefix denotes compliance with automotive-specific site and control change requirements. This makes the SZMMSZ4707T1G suitable for under-hood and chassis-mounted automotive electronics where reliability and qualification rigor are mandatory.

What is the reverse leakage current of SZMMSZ4707T1G and at what voltage is it specified?

The reverse leakage current (IR) of SZMMSZ4707T1G is 0.01 µA, measured at VR = 15.2 V and TA = 25°C. This ultra-low leakage value is critical for high-impedance reference networks and battery-operated systems. It is documented in the Electrical Characteristics table on page 3 of the onsemi datasheet and reflects the device's optimized junction design for minimal off-state conduction.

What package type does SZMMSZ4707T1G use and what are its key mechanical features?

SZMMSZ4707T1G uses the SOD−123 surface-mount package (Case 425), measuring 1.60 × 2.69 × 1.16 mm. Key mechanical features include a cathode polarity band, UL 94 V−0 flammability rating, void-free thermosetting plastic case, and 260°C reflow capability for 10 seconds. These attributes ensure robust automated assembly and long-term reliability in harsh environments.

How does the thermal performance of SZMMSZ4707T1G compare between FR−4 and FR−5 boards?

The SZMMSZ4707T1G is rated for 500 mW power dissipation on FR−5 board at TL = 75°C, with derating at 6.7 mW/°C above that temperature. While the datasheet specifies FR−5 as the reference board, FR−4 performance is not explicitly quantified; however, typical FR−4 thermal resistance would reduce usable power by ~10–15% due to lower thermal conductivity. Engineers should validate layout-dependent thermal margins using the published RJA = 340°C/W value.