Infineon Technologies T1190N16TOFVTXPSA1

Overview

T1190N16TOFVTXPSA1 from Infineon Technologies is a phase-control thyristor designed for high-power AC line commutation in industrial rectifiers, motor drives, and static VAR compensators. It delivers 1190 A average on-state current at 85 °C case temperature, 1600 V repetitive peak off-state voltage (V_DRM/V_RRM), and withstands 25.5 kA non-repetitive surge current (I_TSM) at 10 ms - enabling robust operation in 3-phase 6-pulse bridge configurations feeding DC traction motors.

For engineers reviewing the T1190N16TOFVTXPSA1 datasheet, T1190N16TOFVTXPSA1 pinout, T1190N16TOFVTXPSA1 application, or T1190N16TOFVTXPSA1 equivalent, key selection criteria include verified gate trigger current (I_GT ≤ 250 mA), critical dv/dt rating (1000 V/µs), junction-to-case thermal resistance (0.023 °C/W two-sided cooling), and validated latching current (I_L ≤ 2500 mA) under standardized test conditions per IEC 60747-6.

Technical Context

This thyristor operates as a line-commutated, gate-controlled semiconductor switch in phase-angle controlled AC–DC conversion. Its design centers on high-current conduction (IT_AVM = 1190 A @ TC = 85 °C), low on-state voltage (v_T ≤ 1.06 V @ iT = 1.0 kA), and fast turn-off capability (t_q = 240 µs typical) with defined commutation margins (dv_D/dt = 20 V/µs, -di_T/dt = 10 A/µs).

It features pressure-contact silicon pellet construction with dual-sided heat sinking, requiring clamping force of 16–32 kN. Gate control uses flat terminal geometry per AMP 60598 specification, supporting reliable triggering across -40 °C to +125 °C operating range while maintaining holding current ≤ 500 mA and non-triggering immunity up to V_GD = 0.2 V.

Key Specifications

Pinout & Package

Package: TO-200AB (isolated stud-mount, pressure-contact Si pellet, 600 g mass, 20 mm creepage distance). Requires mechanical clamping force of 16–32 kN between anode and cathode heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Compared with T1190N16TOFVTXPSA1, the T1230N16TOFVTXPSA1 offers +3.4% current capacity within identical thermal and packaging constraints, while the T1190N18TOFVTXPSA1 trades no current loss for +12.5% blocking voltage - making them non-interchangeable but purpose-aligned upgrades for specific design margins.

Availability

T1190N16TOFVTXPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, high-power rectifiers, and static VAR compensators requiring stable component supply across multi-year production cycles and field replacement programs.

Supply support for T1190N16TOFVTXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy infrastructure markets.

This part belongs to Infineon's "Netz-Thyristor" product line, engineered specifically for high-reliability, high-current phase-angle control in utility-grade power conversion systems where thermal stability and commutation predictability are mission-critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum allowable case temperature (T_C) is +125 °C, as defined by the device's thermal limits and validated through transient thermal impedance testing. Operation above this temperature risks irreversible junction damage. Derating curves in the datasheet show that at 1190 A average current, case temperature must be held to ≤85 °C with two-sided cooling to maintain safe junction temperature (T_vj ≤ 125 °C).

Does T1190N16TOFVTXPSA1 require a heatsink, and what clamping force is needed?

Yes - it requires a mechanically clamped, two-sided heatsink assembly. The datasheet specifies a mandatory clamping force of 16–32 kN applied across the anode and cathode terminals to ensure low thermal resistance (R_thJC = 0.023 °C/W) and reliable electrical contact. Insufficient force increases R_thJC, causing premature thermal runaway under rated current.

Can this thyristor be used in forced-commutated circuits?

No - T1190N16TOFVTXPSA1 is designed exclusively for line-commutated operation. Its 240 µs turn-off time (t_q) and lack of integrated reverse-blocking or self-commutating capability make it unsuitable for chopper or inverter topologies requiring active commutation. It must be used in AC-fed circuits where natural current zero-crossings enable turn-off.

What gate drive voltage and current are required for reliable triggering?

A minimum gate trigger voltage of 2 V and current of ≤250 mA at 12 V anode-cathode voltage is required, per IEC 60747-6 test conditions. Gate pulses must exceed 20 µs duration and deliver ≥1 A peak current for latching (I_L ≤ 2500 mA). Exceeding P_GM = 20 W for 10 ms risks gate metallization damage.