Infineon Technologies T160N18BOFXPSA1

Overview

T160N18BOFXPSA1 from eupec (Infineon Technologies) is a 1800 V, 160 A average on-state thyristor in pressure-contact stud-mount package, designed for high-power phase-controlled rectification and AC power control in industrial motor drives, traction converters, and medium-voltage DC link switching. It features 3800 A non-repetitive surge current capability, 1.96 V max on-state voltage at 600 A, and 0.15 °C/W junction-to-case thermal resistance.

For engineers reviewing the T160N18BOFXPSA1 datasheet, T160N18BOFXPSA1 pinout, T160N18BOFXPSA1 application, or T160N18BOFXPSA1 equivalent, this device requires verification of gate trigger current (≤150 mA), critical dv/dt rating (1000 V/µs), thermal interface design for M12 clamping, and compatibility with forced-air heatsinks such as K1.1-M12-A at 30 l/s airflow.

Technical Context

This thyristor operates as a semi-controlled power switch with gate-triggered turn-on and line-commutated turn-off. Its 1800 V repetitive peak off-state voltage (VRRM/VDRM) supports operation in 1100–1380 V AC line systems with safety margin, while its 200 µs typical turn-off time (tq) enables reliable commutation in 50/60 Hz phase-angle control topologies.

The device uses silicon pellet with pressure-contact construction and requires precise mechanical clamping (20 Nm torque, 3.5 kN force) to maintain thermal and electrical integrity. Its gate characteristics demand ≥0.75 A trigger pulse with diG/dt ≥0.75 A/µs to ensure robust latching (IL ≤620 mA) and avoid false triggering (IGD ≤5 mA, VGD ≤0.2 V).

Key Specifications

Pinout & Package

Package: Pressure-contact stud-mount (case design E, M12 thread), silicon pellet with copper braid leads (25 mm² red silicone tube anode/cathode), integrated temperature measurement hole (Ø3.2 × 1.5 mm deep).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power thyristor applications.

Compared with TT160N18KOF, T160N18BOFXPSA1 offers 0.07 °C/W lower thermal resistance and superior mechanical ruggedness; versus SKKT160/18E, it delivers 100 V/µs higher dv/dt immunity and 0.14 V lower on-state drop-critical for efficiency-sensitive traction and industrial drives.

Availability

T160N18BOFXPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, traction converters, and static VAR compensators requiring stable component supply across multi-year production cycles and field replacement programs.

Supply support for T160N18BOFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

eupec was a European power semiconductor division acquired by Infineon Technologies in 2000, specializing in high-power thyristors, diodes, and IGBT modules for industrial and energy infrastructure.

This part belongs to eupec's T-series high-current thyristor family, engineered for ruggedized, high-reliability phase-control applications in harsh environments including rail, mining, and heavy industry.

FAQ

What is the recommended gate drive circuit for T160N18BOFXPSA1?

A gate drive must deliver ≥0.75 A peak current with diG/dt ≥0.75 A/µs and pulse width ≥20 µs. Use a pulse transformer or isolated MOSFET driver (e.g., Infineon 1ED020I12FA) with 15–20 V gate voltage and series resistance ≤10 Ω to limit IGT overshoot. Avoid capacitive coupling that may cause false triggering due to high (dv/dt)cr sensitivity.

Can T160N18BOFXPSA1 be used in parallel configurations?

No-this device lacks inherent current-sharing characteristics due to positive temperature coefficient of on-state voltage. Parallel operation requires matched devices, active current balancing, and individual gate drive timing synchronization. For >160 A applications, use higher-rated single devices (e.g., T250N18) or module-based solutions instead.

What heatsink is required for full 160 A ITAVM operation?

With natural convection, use K1.1-M12-A heatsink (DIN 41892-204B3) at tc ≤85°C; with forced air (30 l/s), same heatsink supports 160 A at tA ≤35°C. Thermal interface material must achieve <0.05 °C·in²/W contact resistance. Mounting torque must be exactly 20 Nm to ensure RthJC ≤0.15 °C/W.

Does T160N18BOFXPSA1 support reverse-conducting operation?

No-it is a standard asymmetrical thyristor with no reverse conduction capability. Reverse voltage blocking is rated at 1800 V (VRRM), but it cannot conduct reverse current. For bidirectional AC switching, use back-to-back thyristor pairs or reverse-conducting devices like RC-SCRs with separate anti-parallel diodes.