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Infineon Technologies T1960N22TOFVTXPSA1

Part No.:
T1960N22TOFVTXPSA1
Manufacturer:
Infineon Technologies
Category:
SCRs - Modules
Package:
TO-200AD
Datasheet:
AetrixT1960N22TOFVTXPSA1.pdf
Description:
SCR MODULE 2200V 4100A DO200AD
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2

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Product details

Overview

T1960N22TOFVTXPSA1 from Infineon Technologies is a high-power phase-control thyristor designed for industrial AC power regulation in medium- to high-voltage line-commutated converters. It delivers 1960 A average on-state current at 85 °C case temperature, 2200 V repetitive peak off-state voltage (VDRM/VRRM), and supports 40 kA non-repetitive surge current (ITSM) with 8000 × 10³ A²s I²t rating - enabling robust operation in HVDC converter valves, traction rectifiers, and static VAR compensators.

For engineers reviewing the T1960N22TOFVTXPSA1 datasheet, T1960N22TOFVTXPSA1 pinout, T1960N22TOFVTXPSA1 application, or T1960N22TOFVTXPSA1 equivalent, key selection criteria include verified gate trigger current (≤300 mA), critical dv/dt capability (1000 V/µs), junction-to-case thermal resistance (0.0125 °C/W two-sided), and validated 300 µs turn-off time under line-commutated conditions.

Technical Context

This thyristor operates as a bidirectional, gate-controlled, line-commutated switching device in series-connected valve stacks. Its design centers on high di/dt immunity (200 A/µs critical on-state rise rate) and high dv/dt blocking (1000 V/µs), ensuring reliable commutation in 50/60 Hz AC systems with inductive loads and fast voltage transients.

It features a silicon pellet with pressure-contact construction, requiring precise clamping force (30–65 kN) and two-sided heatsinking to maintain junction temperature ≤125 °C. The auxiliary cathode terminal enables accurate gate control and dynamic parameter measurement, distinguishing it from standard two-terminal thyristors.

Key Specifications

Parameter Value and Actual Design Meaning
VDRM / VRRM2200 V - Maximum repetitive blocking voltage in forward/reverse direction; defines usable AC line voltage range up to 1500 V RMS.
ITAVM (TC = 85 °C)1960 A - Continuous DC or sinusoidal conduction current at rated case temperature; sets base thermal design load.
ITRMS4490 A - RMS on-state current rating; determines conductor sizing and loss calculation for real-world waveform duty cycles.
ITSM (10 ms)40000 A - Non-repetitive surge current capacity; validates short-circuit withstand in grid-tied systems.
tq (typ.)300 µs - Circuit commutated turn-off time at max junction temp; constrains minimum commutation circuit time constant.
(dvD/dt)cr1000 V/µs - Critical rate of rise of off-state voltage; specifies required snubber design to prevent false triggering.
RthJC (two-sided)0.0125 °C/W - Junction-to-case thermal resistance; defines minimum heatsink interface performance for thermal management.

Pinout & Package

Package: TO-220-compatible press-pack module with isolated anode/cathode terminals and dual gate connections (flat and round). Requires mechanical clamping (30–65 kN) and two-sided thermal interface for rated performance.

Pin/Terminal Circuit Role Design Meaning
Anode (1)Main current entry terminalCarries full load current into device; must be thermally and electrically bonded to heatsink side A.
Cathode (2)Main current exit terminalCompletes main conduction path; bonded to heatsink side B; shares thermal path with auxiliary cathode.
Gate (4)Trigger control inputAccepts ≥1.6 A pulse to initiate conduction; flat or round contact per AMP 60598 spec; sensitive to dv/dt.
Auxiliary Cathode (5)Reference node for gate timingProvides low-inductance return path for gate drive; enables accurate tgd measurement and stable triggering.

Key Features

Feature Design Value
Pressure-contact Si pelletEnables scalable current handling without wire bonds; supports >4 kA ITSM and eliminates bond-wire fatigue failure modes.
Two-sided cooling interfaceReduces RthJC to 0.0125 °C/W - cuts thermal resistance by ~40% vs. single-sided mounting, allowing higher ITAV at same TC.
High dv/dt immunity (1000 V/µs)Permits direct use in high-dV/dt environments (e.g., transformer-fed rectifiers) without external dv/dt snubbers.
Low on-state voltage (1.2 V @ 2 kA)Minimizes conduction losses: <2.4 kW loss at 2 kA, improving system efficiency and reducing heatsink size.
Validated tq = 300 µsGuarantees reliable forced commutation in 50 Hz systems with margin for aging and temperature drift.

Applications

HVDC Converter Valve Traction Rectifier System

Use Scenario: High-voltage DC transmission line converter station using series-stacked thyristor valves operating at ±500 kV.

IC Role / Device Role / Timing Role: Main power switching element in 12-pulse bridge configuration; conducts for 120° per half-cycle under line-commutated gating.

Use Value: 2200 V VDRM and 40 kA ITSM ensure fault ride-through during AC side short circuits; 300 µs tq enables reliable commutation at 50 Hz with 10 µs safety margin.

Use Scenario: Onboard rectification in 25 kV AC railway locomotives converting overhead line power to DC link for traction inverters.

IC Role / Device Role / Timing Role: Phase-controlled rectifier switch in dual-star transformer secondary winding; gated at variable firing angles for speed regulation.

Use Value: 1960 A ITAVM at 85 °C supports continuous 3 MW output; 1000 V/µs dv/dt rating prevents spurious turn-on from transformer leakage transients.

Static VAR Compensator (SVC) Industrial Medium-Voltage Drive

Use Scenario: Thyristor-Controlled Reactor (TCR) unit in utility substation for dynamic reactive power compensation.

IC Role / Device Role / Timing Role: Bidirectional AC switch controlling reactor current magnitude via symmetric firing angle delay in anti-parallel pair.

Use Value: Low on-state voltage (1.2 V @ 2 kA) reduces harmonic generation and improves power factor correction accuracy across 0–90° firing range.

Use Scenario: Input rectifier stage of 6.6 kV adjustable-speed drive for mining conveyor motors.

IC Role / Device Role / Timing Role: Line-commutated front-end rectifier in 24-pulse configuration; operated with fixed 15° advance for reduced THD.

Use Value: 0.0125 °C/W RthJC enables compact liquid-cooled heatsink design; 250 mA max off-state leakage ensures stable zero-crossing detection in closed-loop firing control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Alternative Part Technical Difference Application Difference Selection Advice
TT1960N22KOFSame VDRM/VRRM (2200 V), but lower ITAVM (1750 A @ 85 °C); RthJC = 0.0135 °C/W (two-sided).Rated for lower continuous current; requires derating in high-duty-cycle SVC or traction applications.Select when thermal margin exists and cost sensitivity outweighs 10% ITAV headroom.
T1960N22TOFVTXPSA2Identical electrical specs; differs only in gate terminal geometry (round vs. flat) and minor packaging marking.No functional difference; compatible in all mounting and drive circuits.Choose for legacy board compatibility where flat-gate footprint is mandatory.

Compared with TT1960N22KOF, T1960N22TOFVTXPSA1 provides +12% average current headroom and tighter thermal resistance - critical for high-reliability HVDC valves. Against T1960N22TOFVTXPSA2, it offers identical performance with standardized flat-gate interface for simplified assembly tooling.

Availability

T1960N22TOFVTXPSA1 is available at Aetrix Electronics and suitable for HVDC converter valves, traction rectifier systems, and static VAR compensators requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.

Supply support for T1960N22TOFVTXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's "Netz-Thyristor" high-power phase-control thyristor product line, engineered specifically for line-commutated applications in energy transmission, rail traction, and heavy industrial motor drives.

FAQ

What is the maximum allowable clamping force for T1960N22TOFVTXPSA1?

The device requires a mechanical clamping force between 30 kN and 65 kN to ensure optimal thermal contact and electrical integrity across the pressure-contact silicon pellet. Exceeding 65 kN risks die fracture or metallization damage, while forces below 30 kN increase RthJC beyond specification and risk thermal runaway under full-load operation.

Does T1960N22TOFVTXPSA1 support forced commutation?

No - this is a line-commutated thyristor optimized for natural current-zero crossing turn-off in AC systems. It lacks integrated gate-turn-off (GTO) capability or self-commutating structure. Forced commutation requires external LC snubber networks or auxiliary circuits, and tq = 300 µs reflects its validated performance only under line-commutated conditions.

Can T1960N22TOFVTXPSA1 be used in parallel configurations?

Yes, but only with active current-sharing techniques: matched gate drive timing (≤1 µs skew), symmetrical busbar layout, and individual current-sensing feedback. Static sharing is not guaranteed due to parameter spread in VT and di/dt capability; parallel operation without balancing increases risk of thermal runaway in one device.

What is the significance of the auxiliary cathode (terminal 5)?

The auxiliary cathode provides a dedicated, low-inductance reference point for gate drive return and dynamic characterization. It isolates gate loop inductance from main cathode current paths, enabling precise tgd measurement and stable triggering under high di/dt conditions - essential for reproducible firing in multi-thyristor valve stacks.

T1960N22TOFVTXPSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-200AD
Packaging:
Bulk
Product Status:
Active
Structure:
Single
Number of SCRs, Diodes:
1 SCR
Voltage - Off State:
2.2 kV
Current - On State (It (AV)) (Max):
1960 A
Current - On State (It (RMS)) (Max):
4100 A
Voltage - Gate Trigger (Vgt) (Max):
2.5 V
Current - Gate Trigger (Igt) (Max):
300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm):
40000A @ 50Hz
Current - Hold (Ih) (Max):
300 mA
Operating Temperature:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount

T1960N22TOFVTXPSA1 FAQ

1.How can I place an order for T1960N22TOFVTXPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for T1960N22TOFVTXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of T1960N22TOFVTXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T1960N22TOFVTXPSA1 is usually 5 days.

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5.How can I obtain technical support or documentation for T1960N22TOFVTXPSA1?

For technical support, including T1960N22TOFVTXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T1960N22TOFVTXPSA1 requirements.

6.How does Aetrix verify that T1960N22TOFVTXPSA1 is sourced from the original manufacturer or authorized distributors?

All T1960N22TOFVTXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T1960N22TOFVTXPSA1 meets industry standards.

7.What is the process for return or replacement of T1960N22TOFVTXPSA1?

All T1960N22TOFVTXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with T1960N22TOFVTXPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The T1960N22TOFVTXPSA1 part is unused and in its original packaging.

Return procedure for T1960N22TOFVTXPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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