Infineon Technologies T2481N28TOFVTXPSA1

Overview

T2481N28TOFVTXPSA1 from Infineon Technologies is a phase-control thyristor designed for high-power AC line commutation in medium-voltage converters and soft starters. It delivers 2800 V repetitive peak off-state voltage (VDRM/VRRM), 2720 A average on-state current at 85 °C (ITAVM), and 43.5 kA non-repetitive surge current (ITSM) with 7.1 K/kW junction-to-case thermal resistance. Its pressure-contact silicon pellet construction supports industrial rectifier applications in drive systems.

For engineers reviewing the T2481N28TOFVTXPSA1 datasheet, T2481N28TOFVTXPSA1 pinout, T2481N28TOFVTXPSA1 application, or T2481N28TOFVTXPSA1 equivalent, key selection criteria include clamping force range (42–95 kN), gate trigger current ≤250 mA, critical dv/dt rating of 1000 V/µs, and two-sided cooling compatibility for thermal management in high-current AC phase control circuits.

Technical Context

This thyristor operates as a line-commutated, gate-controlled power switch for phase-angle regulation in AC mains-fed systems. Its design centers on robust blocking capability at 2800 V under 50/60 Hz conditions across –40 °C to +125 °C junction temperature, supported by high DC blocking stability and 200 A/µs critical di/dt rating.

The device uses a pressure-contact Si pellet housed in an industry-standard disc-type package with flat and round gate terminals. Thermal performance relies on two-sided heat sinking, delivering 7.1 K/kW RthJC and enabling sustained conduction angles up to 180° at rated ITAVM with validated transient thermal impedance modeling per IEC 60747-6.

Key Specifications

Pinout & Package

Package: Disc-type, double-side cooled, pressure-contact thyristor with 120 mm maximum diameter, 86 mm contact diameter, and 26.5 mm height. Requires controlled clamping force between 42–95 kN.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Compared with TT2481N28KOF and T2481N28TOFVTXPSA2, the T2481N28TOFVTXPSA1 offers broader clamping force tolerance (42–95 kN) and dual gate interface options, making it more robust for field-serviceable or mechanically variable installations in soft starter cabinets.

Availability

T2481N28TOFVTXPSA1 is available at Aetrix Electronics and suitable for soft starter systems, medium voltage converters, drive rectifiers, and industrial power supplies requiring stable component supply under high thermal and mechanical stress.

Supply support for T2481N28TOFVTXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

This thyristor belongs to Infineon's "Netz-Thyristor" product line, engineered specifically for high-reliability phase control in AC power conditioning systems operating at medium voltages and multi-kiloampere currents.

FAQ

What is the maximum allowable clamping force for T2481N28TOFVTXPSA1?

The device requires a mechanical clamping force between 42 kN and 95 kN. Exceeding 95 kN risks silicon pellet fracture or metallization damage, while forces below 42 kN increase contact resistance and thermal impedance, potentially causing premature thermal runaway at rated current.

Can T2481N28TOFVTXPSA1 be used with single-sided cooling?

No - the datasheet specifies RthJC values only for two-sided cooling (7.1 K/kW) and anode- or cathode-sided cooling (7.74 K/kW). Single-sided mounting is not characterized, and using it invalidates the 2720 A ITAVM rating at 85 °C; derating would be required without validated thermal data.

What gate drive parameters are required for reliable turn-on?

A minimum gate trigger current of 1 A with diG/dt ≥ 1 A/µs and pulse width ≥ 20 µs is required for guaranteed turn-on at max junction temperature. The gate trigger voltage must not exceed 2.5 V, and non-trigger current must stay below 10 mA at full blocking voltage to prevent false firing.

Is auxiliary cathode (terminal 5) mandatory for operation?

Terminal 5 is not mandatory for basic conduction but is recommended for high-di/dt applications (>100 A/µs) to reduce gate loop inductance and improve firing consistency. Omitting it increases risk of non-uniform turn-on across the silicon area under fast-rising load currents.