Infineon Technologies T300N12TOFXPSA1

Overview

T300N12TOFXPSA1 from Infineon Technologies is a phase-control thyristor designed for high-power AC line switching in industrial rectifiers, motor speed controllers, and static VAR compensators. It delivers 303 A average on-state current at 85 °C case temperature, 1200 V repetitive peak off-state voltage (VDRM/VRRM), and supports 3800 A non-repetitive surge current with 150 A/µs critical di/dt rating.

For engineers reviewing the T300N12TOFXPSA1 datasheet, T300N12TOFXPSA1 pinout, T300N12TOFXPSA1 application, or T300N12TOFXPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.069 °C/W two-sided), gate trigger current (≤150 mA), holding current (≤200 mA), and commutated turn-off time (200 µs typical).

Technical Context

This thyristor operates as a latching semiconductor switch in half-wave or full-wave controlled rectifier topologies, requiring precise gate triggering to initiate conduction and relying on natural current zero-crossing for commutation. Its 125 °C maximum junction temperature and pressure-contact silicon pellet construction enable stable operation under sustained high RMS currents up to 680 A.

The device features a defined on-state characteristic (vT = 0.90 V threshold + 1.35 mΩ slope resistance at Tvj max) and robust dv/dt immunity (1000 V/µs critical rate of rise), making it suitable for inductive load control where voltage transients are present during turn-off.

Key Specifications

Pinout & Package

Package: TO-240AA (isolated stud mount, pressure-contact Si pellet, two-sided cooling interface). Clamping force: 2.5–5 kN. Weight: 70 g. Creepage distance: 6 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Compared with T300N12TOF and SKKT300/12E, the T300N12TOFXPSA1 offers superior thermal management via its auxiliary cathode and best-in-class dv/dt immunity-critical for reliable operation in electrically noisy industrial settings with inductive loads.

Availability

T300N12TOFXPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, high-power rectification, static VAR compensation, and heating control systems requiring stable component supply across multi-year production cycles.

Supply support for T300N12TOFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This part belongs to Infineon's "Netz-Thyristor" series, engineered specifically for ruggedized phase-control applications in utility-grade power conversion, where long-term reliability under thermal and electrical stress is mandatory.

FAQ

What is the maximum allowable case temperature for continuous operation?

The T300N12TOFXPSA1 supports continuous operation up to 125 °C case temperature (Tc op range: –40 °C to +125 °C), but its rated average on-state current (ITAVM) is specified at 85 °C for thermal derating compliance. Exceeding 85 °C requires linear derating per the datasheet curves, down to 430 A at 55 °C with 180° conduction.

Does this thyristor require a heatsink, and what mounting force is needed?

Yes-a heatsink is mandatory due to its 303 A ITAVM rating and 0.069 °C/W RthJC. It uses a TO-240AA stud-mount package requiring mechanical clamping force of 2.5–5 kN between anode and heatsink to ensure low thermal resistance and reliable pressure-contact conduction.

Can the auxiliary cathode (pin 5) be left unconnected?

Yes, the auxiliary cathode (pin 5) may be left unconnected without functional impact, but doing so forfeits its thermal benefit-reducing effective heat spreading and increasing local junction temperature under high RMS current. For designs targeting >500 A RMS or extended lifetime, connection is strongly recommended.

What gate drive parameters ensure reliable triggering without false turn-on?

Reliable triggering requires ≥0.75 A gate pulse current with ≥0.75 A/µs diG/dt, delivered within 4.5 µs (tgd max). To prevent false turn-on, maintain dv/dt below 1000 V/µs at the anode and use RC snubbers; gate non-trigger voltage must stay below 0.25 V when VD = 0.5 × VDRM.