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Infineon Technologies T3841N18TOFVTXPSA1

Part No.:
T3841N18TOFVTXPSA1
Manufacturer:
Infineon Technologies
Category:
SCRs
Package:
-
Datasheet:
AetrixT3841N18TOFVTXPSA1.pdf
Description:
STD THYR/DIODEN DISC
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Product details

Overview

T3841N18TOFVTXPSA1 from Infineon Technologies is a high-power phase-control thyristor designed for medium-voltage AC line commutation in industrial power conversion systems. It delivers 4040 A average on-state current (ITAVM) at TC = 85 °C, 1800 V repetitive peak off-state voltage (VDRM/VRRM), and 57 kA non-repetitive surge current (ITSM) at Tj = 135 °C - enabling robust operation in soft starters and drive rectifiers.

For engineers reviewing the T3841N18TOFVTXPSA1 datasheet, T3841N18TOFVTXPSA1 pinout, T3841N18TOFVTXPSA1 application, or T3841N18TOFVTXPSA1 equivalent, key selection criteria include clamping force range (42–95 kN), two-sided thermal resistance (RthJC = 7.1 K/W), gate trigger current ≤250 mA, and critical dv/dt rating of 1000 V/µs under full junction temperature.

Technical Context

This thyristor operates as a line-commutated, gate-controlled semiconductor switch in phase-angle controlled AC power circuits. Its design supports full blocking capability at 50/60 Hz across –40 °C to +135 °C junction temperature, with high DC blocking stability and 250 µs typical circuit commutated turn-off time (tq) under specified commutation conditions.

The device uses a silicon pellet with pressure-contact construction and dual-sided cooling interface. Its gate control characteristics are defined for VD = 12 V, with triggering guaranteed up to 250 mA IGT and 2.5 V VGT, while maintaining non-trigger immunity (IGD ≤ 10 mA, VGD ≤ 0.25 V) at maximum junction temperature and 0.5×VDRM blocking voltage.

Key Specifications

ParameterValue and Actual Design Meaning
VDRM / VRRM1800 V - ensures reliable 6.6 kV system-level isolation in medium-voltage converters when used with appropriate snubbers and derating
ITAVM (TC = 85 °C)4040 A - defines continuous conduction capability in soft starter main legs with forced-air or liquid-cooled heatsinks
ITSM (tP = 10 ms, Tj = 135 °C)57000 A - supports short-circuit withstand in motor drive rectifier bridges during fault clearing
(dvD/dt)cr1000 V/µs - enables stable operation in high-di/dt environments without false triggering, critical for unfiltered line inputs
RthJC (two-sided)7.1 K/kW - quantifies thermal path efficiency from junction to case under symmetrical cooling, directly impacting steady-state power loss management
V(TO) / rT0.80 V / 0.08 mΩ - combined forward voltage drop model determines conduction losses (PTAV ≈ ITAV² × rT + ITAV × V(TO)) at rated current
tq (typ.)250 µs - sets minimum commutation interval required in forced-commutated inverters or cycloconverters

Pinout & Package

Package: Pressure-contact, disc-type, double-sided cooled thyristor with 120 mm max diameter, 86 mm contact diameter, and 26.5 mm height. Requires mechanical clamping force of 42–95 kN for optimal thermal and electrical contact.

Pin/TerminalCircuit RoleDesign Meaning
Anode (1)Main current terminal (positive conduction path)High-current input node; must be mounted to heatsink with uniform pressure and low-impedance thermal interface
Cathode (2)Main current terminal (negative conduction path)Primary output node; electrically and thermally coupled to second heatsink surface in two-sided cooling configuration
Gate (4)Control input for turn-on initiationLow-energy trigger port requiring ≤250 mA pulse; isolated from main terminals by creepage distance ≥33 mm
Auxiliary Cathode (5)Secondary cathode connection for gate return pathProvides dedicated low-inductance gate current return, improving di/dt immunity and reducing false triggering risk

Key Features

FeatureDesign Value
Full 50/60 Hz blocking over –40 °C to +135 °CEnables deployment in outdoor substations and industrial enclosures without ambient temperature derating
High surge current capability (57 kA, 10 ms)Withstands motor locked-rotor currents and grid fault transients without degradation in drive rectifier applications
Two-sided cooling interface (RthJC = 7.1 K/kW)Supports >6 kW continuous dissipation with symmetric heatsink mounting, eliminating single-point thermal bottleneck
1000 V/µs critical dv/dt ratingPermits direct connection to unfiltered medium-voltage lines without external dv/dt snubbers in many configurations
Pressure-contact Si-pellet constructionEliminates wire bonds and solder layers, enhancing long-term reliability under thermal cycling in high-power traction systems

Applications

Soft StarterMedium Voltage Converter

Use Scenario: Controlled ramp-up of induction motor voltage during startup to limit inrush current and mechanical stress.

IC Role / Device Role / Timing Role: Main phase-leg switching element in back-to-back thyristor configuration, triggered at adjustable conduction angles per half-cycle.

Use Value: Delivers 4040 A ITAVM at 85 °C case temperature, enabling compact thermal design for 2–5 MVA motor starters with minimal heatsink mass.

Use Scenario: AC/DC conversion stage in 3.3 kV or 6.6 kV industrial variable-frequency drives.

IC Role / Device Role / Timing Role: Line-commutated rectifier switch in 12-pulse or 24-pulse configurations, synchronized to grid phase for harmonic reduction.

Use Value: 1800 V VDRM supports 6.6 kV system insulation coordination; 250 µs tq allows reliable commutation with passive LC filters.

Drive RectifierGrid-Scale Power Conditioning

Use Scenario: Uncontrolled or semi-controlled rectification feeding DC link capacitors in large industrial motor drives.

IC Role / Device Role / Timing Role: High-current bidirectional conduction path in six-pulse bridge, conducting for 180° per half-cycle under full-load sinusoidal current.

Use Value: 6350 A ITRMS rating and 7.1 K/kW RthJC enable >4 MW rectifier modules with air-cooled heatsinks and <10 K temperature rise.

Use Scenario: Reactive power compensation and harmonic filtering in utility-scale STATCOM or SVC systems.

IC Role / Device Role / Timing Role: Phase-controlled switching element in thyristor-switched reactor (TSR) or thyristor-controlled reactor (TCR) branches.

Use Value: 1000 V/µs (dv/dt)cr and 200 A/µs (di/dt)cr ensure stable firing under fast grid voltage transients and capacitor-switching events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TT1750N18KOFLower ITAVM (3200 A @ TC = 85 °C); identical VDRM (1800 V); higher RthJC (8.5 K/kW)Suitable for lower-power soft starters (<1.5 MVA) where thermal margin permits larger heatsink volumeSelect when footprint compatibility is required but peak current demand is ≤80 % of T3841N18TOFVTXPSA1 rating
T3840N18TOFSame package and ITAVM, but no auxiliary cathode (terminal 5 omitted); identical electrical specs otherwiseApplicable where gate loop inductance is minimized via PCB layout or external gate driver designChoose when auxiliary cathode is not needed for EMI control and gate drive design accommodates higher loop inductance

Compared with TT1750N18KOF and T3840N18TOF, the T3841N18TOFVTXPSA1 provides superior thermal performance (7.1 vs. 8.5 K/kW), higher surge rating (57 vs. 50 kA), and integrated auxiliary cathode for enhanced gate noise immunity - making it optimal for high-reliability, high-power medium-voltage rectification where thermal headroom and EMI robustness are critical.

Availability

T3841N18TOFVTXPSA1 is available at Aetrix Electronics and suitable for soft starters, medium voltage converters, and drive rectifiers requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.

Supply support for T3841N18TOFVTXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's high-power thyristor product line, engineered specifically for medium-voltage industrial power conversion - emphasizing thermal robustness, surge resilience, and precise phase-angle control in harsh electromagnetic environments.

FAQ

What is the recommended clamping force range for T3841N18TOFVTXPSA1 installation?

The device requires mechanical clamping force between 42 kN and 95 kN to ensure optimal thermal contact and low-resistance electrical interface across both anode and cathode surfaces. Force below 42 kN risks increased RthJC and premature thermal runaway; force above 95 kN may deform the copper housing or damage internal Si-pellet bonding. Torque values depend on specific mounting hardware and must follow Infineon's published assembly guidelines for TO-247-compatible pressure packages.

Does T3841N18TOFVTXPSA1 support asymmetrical cooling (anode-only or cathode-only)?

Yes - the datasheet specifies distinct RthJC values for anode-sided (7.74 K/kW), cathode-sided (7.74 K/kW), and two-sided (7.1 K/kW) cooling. However, asymmetrical operation reduces total power handling: at 85 °C case temperature, ITAVM drops to ~3500 A for single-sided cooling versus 4040 A for two-sided. Thermal modeling must account for uneven junction temperature distribution, especially under DC or low-conduction-angle operation.

What gate drive requirements must be met to ensure reliable turn-on?

Reliable triggering requires a gate pulse with peak current ≥250 mA, voltage ≥2.5 V, and minimum width ≥20 µs under worst-case conditions (Tj = 135 °C, VD = 12 V). The auxiliary cathode (terminal 5) must be connected to the gate driver return path to minimize loop inductance. Gate power dissipation must stay within PGM limits: ≤20 W for 10 ms, ≤40 W for 1 ms, or ≤60 W for 0.5 ms pulses - verified using the provided PGM = f(tg) curve.

How does the auxiliary cathode (terminal 5) improve system-level performance?

The auxiliary cathode provides a dedicated, low-inductance return path for gate current, decoupling gate loop impedance from the main power loop. This reduces susceptibility to false triggering from high di/dt transients (≥200 A/µs) and improves timing jitter control during phase-angle modulation. In multi-thyristor stacks, it enables consistent firing across parallel devices by minimizing ground-bounce-induced gate voltage offset, directly enhancing converter harmonic profile and thermal balance.

T3841N18TOFVTXPSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
-
Packaging:
Tray
Product Status:
Active
Voltage - Off State:
-
Voltage - Gate Trigger (Vgt) (Max):
-
Current - Gate Trigger (Igt) (Max):
-
Voltage - On State (Vtm) (Max):
-
Current - On State (It (AV)) (Max):
-
Current - On State (It (RMS)) (Max):
-
Current - Hold (Ih) (Max):
-
Current - Off State (Max):
-
Current - Non Rep. Surge 50, 60Hz (Itsm):
-
SCR Type:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

T3841N18TOFVTXPSA1 FAQ

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For technical support, including T3841N18TOFVTXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T3841N18TOFVTXPSA1 requirements.

6.How does Aetrix verify that T3841N18TOFVTXPSA1 is sourced from the original manufacturer or authorized distributors?

All T3841N18TOFVTXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T3841N18TOFVTXPSA1 meets industry standards.

7.What is the process for return or replacement of T3841N18TOFVTXPSA1?

All T3841N18TOFVTXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with T3841N18TOFVTXPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The T3841N18TOFVTXPSA1 part is unused and in its original packaging.

Return procedure for T3841N18TOFVTXPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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