Infineon Technologies T501N70TOHXPSA1

Overview

T501N70TOHXPSA1 from Infineon Technologies is a phase-control thyristor designed for medium-voltage power conversion, featuring V_DRM/V_RRM = 7000 V, I_TAVM = 640 A (T_C = 85°C), and high di/dt capability of 300 A/µs. It operates in static var compensation (SVC), soft starters, and crowbar protection circuits where robust blocking and surge resilience are critical.

For engineers reviewing the T501N70TOHXPSA1 datasheet, T501N70TOHXPSA1 pinout, T501N70TOHXPSA1 application, or T501N70TOHXPSA1 equivalent, key selection criteria include verified 7000 V repetitive blocking voltage, 13.5 kA 10 ms surge current rating, clamping force range (15–24 kN), two-sided cooling thermal resistance (17.0 K/kW), and gate trigger current ≤350 mA at 25°C.

Technical Context

This thyristor employs pressure-contact silicon pellet construction with dual-sided heat dissipation, enabling stable conduction under high dv/dt (2000 V/µs) and di/dt (300 A/µs) stress. Its turn-off time (t_q) is 600 µs at rated current and junction temperature, supporting circuit-commutated inverter operation.

The device uses a four-terminal configuration (anode, cathode, gate, auxiliary cathode) to support precise gate control and low-impedance current paths. Its analytical on-state characteristic (v_T = A + B·i_T + C·i_T² + D·i_T³) is defined across 100–1200 A, with v_T0 = 1.3 V and r_T = 1.35 mΩ at T_vj = 125°C.

Key Specifications

Pinout & Package

Package: Press-pack, double-sided cooled, disc-type thyristor with 76 mm maximum diameter, 50 mm contact diameter, and 26 mm height. Requires mechanical clamping force of 15–24 kN.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Compared with TT1700N14KOF and ST1200N70G, T501N70TOHXPSA1 uniquely combines 7 kV blocking, 13.5 kA surge rating, auxiliary cathode isolation, and two-sided thermal interface-making it irreplaceable in medium-voltage crowbar and SVC systems demanding simultaneous high voltage, high surge, and noise-immune control.

Availability

T501N70TOHXPSA1 is available at Aetrix Electronics and suitable for medium-voltage soft starters, static VAR compensation (SVC) systems, and crowbar protection circuits requiring stable component supply across long-lifecycle industrial deployments.

Supply support for T501N70TOHXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and R&D infrastructure.

This part belongs to Infineon's high-power thyristor product line, engineered specifically for medium-voltage energy conversion systems including grid-connected SVC, soft starters, and fault protection circuits.

FAQ

What is the required clamping force for T501N70TOHXPSA1 installation?

The device requires a mechanical clamping force between 15 kN and 24 kN to ensure proper thermal contact and electrical integrity across its pressure-contact silicon pellet. Under-torque risks thermal runaway; over-torque may deform the housing or damage internal contacts. Use calibrated torque tools and follow Infineon's mounting procedure in Application Note AN2011-05.

Does T501N70TOHXPSA1 support gate triggering with AC gate drive?

No-this thyristor requires DC-pulsed gate triggering with polarity referenced to the auxiliary cathode (terminal 5). AC gate drive is not supported due to asymmetric gate-cathode structure and absence of reverse gate capability. Gate voltage must remain ≤2.5 V peak and current ≤350 mA per pulse, with minimum pulse width of 20 µs.

Can T501N70TOHXPSA1 be used in series-string configurations for >7 kV systems?

Yes-Infineon specifies dynamic voltage sharing techniques for series connection, including matched dv/dt ratings (2000 V/µs), gate trigger synchronization (<2 µs skew), and active snubber networks. Derating to 80% of V_RRM per device is mandatory; parallel operation requires current-sharing reactors due to parameter spread.

What is the maximum allowable case temperature during continuous operation?

The maximum case temperature is not directly specified; instead, thermal design must limit junction temperature to ≤125°C. With R_thJC = 17.0 K/kW (two-sided cooling), the case-to-heatsink resistance (R_thCH) must be ≤5.0 K/kW. At 640 A average current and v_T ≈ 2.6 V, conduction loss is ~1.66 kW-so case temperature rise above heatsink must stay ≤8.3°C to maintain safe junction margin.