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Infineon Technologies T640N14TOFXPSA1
- Part No.:
- T640N14TOFXPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- SCRs - Modules
- Package:
- DO-200AA, A-PUK
- Datasheet:
-
T640N14TOFXPSA1.pdf
- Description:
- SCR MODULE 1800V 1250A DO200AA
- Quantity:
- Payment:
- Shipping:
Inventory:6
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Product details
Overview
T640N14TOFXPSA1 from Infineon Technologies is a phase-control thyristor designed for high-power AC line switching in industrial rectifiers, motor drives, and static VAR compensators. It delivers 1400 V repetitive peak off-state voltage (VDRM/VRRM), 1450 A RMS on-state current (ITRMS), and 9400 A non-repetitive surge current (ITSM) at 25 °C with 10 ms pulse width - enabling robust operation in 3-phase 6-pulse bridge configurations feeding DC traction motors.
For engineers reviewing the T640N14TOFXPSA1 datasheet, T640N14TOFXPSA1 pinout, T640N14TOFXPSA1 application, or T640N14TOFXPSA1 equivalent, key selection criteria include verified gate trigger current (IGT ≤ 250 mA), critical dv/dt rating (1000 V/µs), junction-to-case thermal resistance (0.039 °C/W two-sided), and validated commutated turn-off time (tq = 250 µs).
Technical Context
This device operates as a fully controllable, gate-triggered silicon-controlled rectifier (SCR) in forced-commutated or line-commutated topologies. Its design supports phase-angle control of sinusoidal currents up to 180° conduction, with confirmed latching current (IL ≤ 1200 mA) and holding current (IH ≤ 300 mA) ensuring reliable turn-on and sustained conduction under varying load conditions.
Thermal performance is defined by analytical transient thermal impedance models (ZthJC) for anode-, cathode-, and two-sided cooling configurations. The device's on-state characteristic follows a four-parameter polynomial (A=0.9775, B=2.642×10⁻⁴, C=−0.08379, D=0.02424) valid across 200–3200 A, enabling precise loss calculation in high-fidelity thermal simulations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDRM / VRRM | 1400 V - Maximum repetitive blocking voltage in forward/reverse direction; defines usable AC line voltage range (e.g., 690 VAC 3-phase systems with safety margin) |
| ITRMS | 1450 A - RMS on-state current rating; determines continuous power handling capability with two-sided heatsinking and 180° conduction |
| ITSM (10 ms) | 9400 A - Non-repetitive surge current; supports short-circuit withstand in industrial drive DC-link protection |
| (dv/dt)cr | 1000 V/µs - Critical rate of rise of off-state voltage; ensures immunity to false triggering during fast transients in high-dv/dt environments |
| tq | 250 µs - Circuit commutated turn-off time at Tvj max; sets minimum commutation circuit time constant for reliable forced turn-off |
| RthJC (two-sided) | 0.039 °C/W - Junction-to-case thermal resistance; enables thermal design for 644 A average current at TC = 85 °C |
| vT @ 2400 A | 2.15 V - On-state voltage at full-rated current; directly determines conduction loss (P = vT × iT) in high-current bridges |
Pinout & Package
Package: TO-240AA (isolated press-pack thyristor with dual-side cooling interface, 110 g mass, 6 mm creepage distance, clamping force 6–12 kN). Anode and cathode terminals are flat copper surfaces; gate and auxiliary cathode are discrete screw-type terminals per AMP 60598 standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (1) | Main current entry terminal | High-current path input; requires low-inductance busbar connection and direct thermal interface to heatsink |
| Cathode (2) | Main current exit terminal | Carries full load current to DC bus; thermally coupled to heatsink opposite anode side |
| Gate (4) | Trigger control input | Low-energy gate drive interface (≤250 mA IGT); isolated from main terminals; requires snubber for dv/dt immunity |
| Auxiliary Cathode (5) | Reference point for gate drive | Provides local ground reference for gate signal; minimizes common-mode noise coupling during high-di/dt switching |
Key Features
| Feature | Design Value |
|---|---|
| Two-sided thermal interface | 0.039 °C/W RthJC enables 644 A ITAV at TC = 85 °C with symmetrical heatsinking - reduces thermal stress in high-power rectifiers |
| High dv/dt immunity | 1000 V/µs critical rate ensures stable blocking without spurious turn-on in noisy industrial EMI environments |
| Validated commutation performance | 250 µs tq at Tvj max supports reliable forced commutation in static VAR compensators using LC snubbers |
| Four-parameter on-state model | Polynomial coefficients (A–D) enable accurate conduction loss prediction across 200–3200 A for thermal simulation and efficiency modeling |
| Robust gate trigger margin | Max 250 mA IGT and 2.2 V VGT ensure compatibility with standard opto-triac and pulse-transformer gate drivers |
Applications
| Industrial Motor Drives | High-Power Rectification |
|---|---|
|
Use Scenario: 3-phase, 6-pulse SCR bridge supplying field-oriented controlled DC motors in steel mill rolling stands. IC Role / Device Role / Timing Role: Main power switch in line-commutated rectifier; triggered at variable firing angles to regulate DC bus voltage and motor torque. Use Value: 1450 A ITRMS and 9400 A ITSM support peak mechanical loads while maintaining <2.15 V conduction drop at 2400 A, minimizing thermal derating. |
Use Scenario: Medium-voltage DC power supply for electrolysis cells in aluminum smelting plants. IC Role / Device Role / Timing Role: Phase-controlled thyristor in parallel-connected bridge arms delivering >10 kA DC output. Use Value: Two-sided cooling (RthJC = 0.039 °C/W) enables stable 644 A ITAV operation at 85 °C case temperature, reducing heatsink mass and footprint. |
| Static VAR Compensation | Traction Power Conversion |
|
Use Scenario: Thyristor-switched capacitor (TSC) bank for dynamic reactive power compensation in wind farm grid interconnections. IC Role / Device Role / Timing Role: Fast-turn-on switch controlling capacitor bank insertion timing to match reactive demand within 10 ms cycles. Use Value: 250 µs tq and 1000 V/µs (dv/dt)cr allow precise zero-crossing switching without oscillation or restrike in high-impedance networks. |
Use Scenario: Regenerative braking converter in urban rail vehicles converting DC traction motor back-EMF into AC grid power. IC Role / Device Role / Timing Role: Line-commutated inverter thyristor operating in inversion mode with forced commutation via auxiliary circuits. Use Value: Confirmed 1200 mA latching current and 300 mA holding current ensure stable conduction during low-current regeneration phases. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar phase-control thyristor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| T640N16TOFXPSA1 | Higher VDRM/VRRM (1600 V); identical package, thermal, and gate characteristics | Supports higher AC line voltages (e.g., 760 VAC 3-phase) but requires larger snubbers due to increased stored charge | Select when system overvoltage margin exceeds 1400 V requirement and layout allows increased dv/dt filtering |
| T500N14TOFXPSA1 | Lower ITRMS (1150 A), lower ITAV (500 A @ TC = 85 °C); same VDRM, RthJC, and tq | Suitable for lower-power bridges where thermal budget permits smaller heatsinks but shares identical gate drive and commutation behavior | Choose for cost-sensitive designs with ≤500 A average current and space-constrained thermal management |
Compared with T640N14TOFXPSA1, the T640N16TOFXPSA1 offers higher voltage headroom at no thermal or gate-drive penalty, while the T500N14TOFXPSA1 reduces conduction capability without altering commutation dynamics - enabling scalable design across 500–644 A average current tiers.
Availability
T640N14TOFXPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, high-power rectification, static VAR compensation, and traction power conversion requiring stable component supply across multi-year production cycles.
Supply support for T640N14TOFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.
This thyristor belongs to Infineon's "Netz-Thyristor" series, engineered specifically for high-reliability, high-current phase-control applications in utility-scale power conversion and heavy industrial automation.
FAQ
What is the maximum allowable case temperature for continuous operation?
The maximum allowable case temperature (TC) is 125 °C, but the rated average on-state current (ITAVM) is specified at TC = 85 °C (644 A) and TC = 55 °C (920 A) for 180° sinusoidal conduction. Operation above 85 °C requires derating per the published TC vs. ITAV curves for both sinusoidal and rectangular waveforms.
Is auxiliary cathode connection mandatory for gate drive reference?
Yes - the auxiliary cathode (terminal 5) provides a dedicated low-impedance reference for gate drive signals, isolating gate control from main cathode potential swings during high-di/dt commutation. Omitting this connection risks gate misfiring or damage due to common-mode voltage transients exceeding VGD max (0.25 V).
Can this thyristor be used in forced-commutated inverters?
Yes - its 250 µs circuit commutated turn-off time (tq) at Tvj max and 1000 V/µs (dv/dt)cr rating make it suitable for line- and forced-commutated inverters. Successful implementation requires matching commutation circuit parameters (e.g., L, C, di/dt) to the device's recovered charge (Qr) and tq specifications per the datasheet graphs.
What clamping force is required for reliable thermal contact?
A clamping force of 6–12 kN must be applied uniformly across the anode and cathode surfaces to maintain specified RthJC (0.039 °C/W two-sided) and prevent thermal runaway. Force outside this range risks insufficient thermal contact (low force) or die fracture (excessive force), both invalidating the rated current and thermal performance.
T640N14TOFXPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- DO-200AA, A-PUK
- Packaging:
- Tray
- Product Status:
- Active
- Structure:
- Single
- Number of SCRs, Diodes:
- 1 SCR
- Voltage - Off State:
- 1.8 kV
- Current - On State (It (AV)) (Max):
- 644 A
- Current - On State (It (RMS)) (Max):
- 1250 A
- Voltage - Gate Trigger (Vgt) (Max):
- 2.2 V
- Current - Gate Trigger (Igt) (Max):
- 250 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm):
- 9400A @ 50Hz
- Current - Hold (Ih) (Max):
- 300 mA
- Operating Temperature:
- -40°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Clamp On
T640N14TOFXPSA1 FAQ
1.How can I place an order for T640N14TOFXPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for T640N14TOFXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T640N14TOFXPSA1 reliable?
The price and inventory of T640N14TOFXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T640N14TOFXPSA1 is usually 5 days.
3.What payment methods are accepted for T640N14TOFXPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T640N14TOFXPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T640N14TOFXPSA1?
T640N14TOFXPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T640N14TOFXPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T640N14TOFXPSA1?
For technical support, including T640N14TOFXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T640N14TOFXPSA1 requirements.
6.How does Aetrix verify that T640N14TOFXPSA1 is sourced from the original manufacturer or authorized distributors?
All T640N14TOFXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T640N14TOFXPSA1 meets industry standards.
7.What is the process for return or replacement of T640N14TOFXPSA1?
All T640N14TOFXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with T640N14TOFXPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T640N14TOFXPSA1 part is unused and in its original packaging.
Return procedure for T640N14TOFXPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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