Renesas TBB1005EMTL-H

Overview

TBB1005EMTL-H from Renesas Electronics is a twin built-in biasing circuit MOS FET IC designed for VHF/UHF RF amplifier stages in broadcast tuners. It integrates two matched BBFETs (FET1 for UHF, FET2 for VHF) in a single CMPAK-6 package, delivering 21 dB typical power gain at 900 MHz (FET1) and 27 dB at 200 MHz (FET2), with noise figures as low as 1.2 dB (FET2), enabling high-sensitivity terrestrial digital TV tuner front-ends.

For engineers reviewing the TBB1005EMTL-H datasheet, TBB1005EMTL-H pinout, TBB1005EMTL-H application, or TBB1005EMTL-H equivalent, key selection criteria include dual-band RF gain matching, integrated ESD protection (200 V HBM), gate bias flexibility via external resistors (RG = 82 kΩ for VHF, 100 kΩ for UHF), and compact SMD footprint for space-constrained tuner modules.

Technical Context

This device implements two independent N-channel silicon MOSFETs on a single die-FET1 optimized for UHF band operation (900 MHz) with 1.8 pF typical Ciss and 1.4 pF Coss, and FET2 tuned for VHF band (200 MHz) with higher input capacitance (2.6 pF Ciss) and superior noise performance (1.2 dB typ NF). Both share common source and isolated gate terminals to enable independent DC bias control.

The integrated twin-BBFET architecture eliminates discrete bias network components, reducing BOM count and PCB area. Gate-1(1)/Gate-1(2) provide separate control paths for each FET's primary gate, while Gate-2 serves as a secondary gate for gain adjustment-confirmed by gain reduction vs. VG2S curves showing up to 4 dB attenuation at 200 MHz when VG2S varies from 0 to 5 V.

Key Specifications

Pinout & Package

Package: CMPAK-6 (RENESAS code PTSP0006JA-A), surface-mount mini-mold package with 0.65 mm pitch, 2.2 × 1.35 × 0.7 mm body dimensions, and 0.006 g mass. Marking "EM" identifies TBB1005 series.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-band RF amplifier applications.

Compared with NE85633 and UPA803T, TBB1005EMTL-H uniquely delivers integrated dual-band amplification with on-chip ESD protection and analog gain control in a 2.2 × 1.35 mm SMD package-reducing tuner front-end component count by ≥4 devices while meeting stringent terrestrial TV noise and reliability standards.

Availability

TBB1005EMTL-H is available at Aetrix Electronics and suitable for terrestrial digital TV tuners, cable set-top box RF front-ends, FM radio receivers, and ISDB-T mobile TV modules requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for TBB1005EMTL-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and RF solutions for automotive, industrial, and consumer electronics.

TBB1005EMTL-H belongs to Renesas' Twin BBFET product line, engineered specifically for cost-sensitive, space-constrained broadcast tuner applications requiring simultaneous VHF and UHF amplification with minimal external components.

FAQ

What is the function of Gate-2 in TBB1005EMTL-H?

Gate-2 in TBB1005EMTL-H serves as a secondary gate terminal common to both integrated FETs, enabling analog gain reduction of up to 4 dB across VHF and UHF bands. When biased between 0 V and 5 V, it modulates channel conductance without affecting DC operating points set by Gate-1(1) and Gate-1(2), making TBB1005EMTL-H suitable for AGC implementations in tuner designs.

Does TBB1005EMTL-H require external bias resistors?

TBB1005EMTL-H does not require external bias resistors for basic operation-the Gate-1(1) and Gate-1(2) terminals accept direct DC bias voltages. However, typical application circuits use 100 kΩ for UHF (FET1) and 82 kΩ for VHF (FET2) to stabilize ID(op) at 17 mA and 18 mA respectively, as validated in Renesas' test circuits on page 3 of R07DS0315EJ1000.

What is the maximum power dissipation rating for TBB1005EMTL-H?

The maximum channel power dissipation for TBB1005EMTL-H is 250 mW per FET, measured on a standard glass epoxy board (49 mm × 38 mm × 1 mm). This rating applies individually to FET1 and FET2, and thermal derating is required above 25°C ambient per the curve on page 5 of the datasheet.

Is TBB1005EMTL-H RoHS compliant?

Yes, TBB1005EMTL-H is RoHS compliant per EU Directive 2011/65/EU, as confirmed by Renesas' environmental compliance documentation. The CMPAK-6 package uses lead-free solderable terminations and halogen-free molding compound, meeting all substance restrictions including Pb, Cd, Hg, Cr⁶⁺, PBB, and PBDE.

Can TBB1005EMTL-H replace discrete BBFET pairs in existing tuner designs?

Yes, TBB1005EMTL-H is designed as a drop-in replacement for discrete twin BBFET configurations-its pinout (Drain(1), Source, Drain(2), Gate-1(2), Gate-2, Gate-1(1)) maps directly to standard dual-FET layouts, and its electrical characteristics (VDS = 6 V, ID = 17–18 mA, PG = 21–27 dB) match industry-standard BBFET specs, enabling direct substitution without PCB revision.