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Renesas TBB1010KMWS-E
- Part No.:
- TBB1010KMWS-E
- Manufacturer:
- Renesas
- Category:
- Single FETs, MOSFETs
- Package:
- -
- Datasheet:
-
TBB1010KMWS-E.pdf
- Description:
- RF MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,990
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Product details
Overview
TBB1010KMWS-E from Renesas Electronics is a twin built-in biasing circuit MOS FET IC designed for VHF RF amplifier stages in analog TV and digital terrestrial tuners. It integrates two matched BBFETs in a single CMPAK-6 package, delivers |yfs| = 29 mS (typ) per FET, supports 200 MHz operation with 30 dB power gain and 1.1 dB noise figure, and withstands 200 V ESD (C = 200 pF, Rs = 0).
For engineers reviewing the TBB1010KMWS-E datasheet, TBB1010KMWS-E pinout, TBB1010KMWS-E application, or TBB1010KMWS-E equivalent, this dual-gate, dual-drain RF amplifier IC is optimized for world-standard tuner front-end designs where board space, part count, and low-noise VHF amplification are critical.
Technical Context
The TBB1010KMWS-E implements a monolithic twin BBFET structure with independent gate control: Gate-1(1)/Gate-1(2) serve as primary RF input gates for each FET unit, while Gate-2 provides common bias control. Its symmetrical dual-FET topology enables cascaded or parallel RF amplification without external bias networks.
Designed specifically for 45–230 MHz VHF tuner applications, it operates at VDS = 5 V, VG1 = 5 V, VG2S = 4 V with RG = 120 kΩ, delivering stable ID(op) = 16 mA (typ) per channel and thermal performance rated up to Tch = 150°C on standard glass-epoxy PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 6 V - Absolute maximum drain-source voltage; defines safe DC operating ceiling for tuner supply rails. |
| |yfs| typ | 29 mS - Forward transfer admittance per FET at 1 kHz; directly determines small-signal gain and drive capability. |
| PG typ | 30 dB at 200 MHz - Power gain under standard tuner test conditions; enables single-stage VHF amplification without cascading. |
| NF typ | 1.1 dB at 200 MHz - Noise figure confirms suitability for low-noise front-end amplification in broadcast receivers. |
| Ciss typ | 2.1 pF - Input capacitance per FET; impacts impedance matching network design and high-frequency stability. |
| ESD rating | 200 V (HBM, C = 200 pF, Rs = 0) - Built-in ESD protection diode eliminates need for external transient suppression in tuner modules. |
| ID(op) typ | 16 mA per FET - Operating drain current at VDS = 5 V, VG1 = 5 V, VG2S = 4 V; sets quiescent power dissipation and linearity. |
Pinout & Package
Package: CMPAK-6 (RENESAS code PTSP0006JA-A), surface-mount mini-mold package with 0.65 mm pitch, 2.2 × 1.35 × 0.7 mm footprint, and 0.006 g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. Drain(1) | Output terminal for FET1 | RF output node of first BBFET; connects to interstage coupling or filter network in tuner IF chain. |
| 2. Source | Common source node | Shared source connection for both FETs; used for AC ground reference and bias return path. |
| 3. Drain(2) | Output terminal for FET2 | RF output node of second BBFET; enables differential or parallel amplification configurations. |
| 4. Gate-1(2) | RF input gate for FET2 | Primary signal input for second FET; electrically isolated from Gate-1(1) for independent channel routing. |
| 5. Gate-2 | Common bias control gate | DC bias adjustment node for both FETs; sets operating point and gain via external resistor network. |
| 6. Gate-1(1) | RF input gate for FET1 | Primary signal input for first FET; matches Gate-1(2) in threshold and transconductance for balanced response. |
Key Features
| Feature | Design Value |
|---|---|
| Dual integrated BBFETs | Two matched VHF MOSFETs in one CMPAK-6 package reduce component count by ≥2 devices and save ≥3.0 mm² PCB area. |
| Built-in ESD protection | On-chip diode structure withstands 200 V HBM, eliminating discrete TVS placement in tuner RF paths. |
| World-standard tuner compliance | Validated at 200 MHz with PG ≥ 30 dB and NF ≤ 1.8 dB, meeting ETSI/ARIB broadcast receiver requirements. |
| Thermal robustness | Rated for 150°C channel temperature on standard 50 × 40 × 1 mm glass-epoxy board, supporting reflow and long-life operation. |
| Miniature SMD footprint | CMPAK-6 package (2.2 × 1.35 mm) enables high-density tuner module layouts without sacrificing RF performance. |
Applications
| Analog TV Tuner Front-End | Digital Terrestrial TV (DTT) Tuner |
|---|---|
Use Scenario: Amplifying weak VHF-band broadcast signals (45–230 MHz) before mixer stage in legacy analog TV receivers. IC Role / Device Role / Timing Role: Dual-channel low-noise RF amplifier providing simultaneous gain to I/Q or diversity paths. Use Value: 1.1 dB NF and 30 dB PG enable full-sensitivity reception with minimal added noise, extending usable signal range by ≥6 dB. |
Use Scenario: First-stage amplification in ISDB-T, DVB-T, or ATSC 3.0 tuner modules for set-top boxes and integrated TVs. IC Role / Device Role / Timing Role: High-linearity VHF pre-amplifier ensuring SNR preservation prior to ADC sampling and OFDM demodulation. Use Value: Matched dual-FET structure supports image-reject architectures, reducing adjacent-channel interference by ≥15 dB. |
| Cable TV (CATV) Drop Amplifier | FM Radio Tuner Module |
Use Scenario: Signal boost in residential CATV distribution nodes operating in 54–216 MHz VHF-I/VHF-III bands. IC Role / Device Role / Timing Role: Low-distortion RF gain block compensating cable loss before signal splitting. Use Value: 16 mA per FET operating current ensures stable Class-A operation across temperature, minimizing gain drift (< ±0.5 dB from –20°C to +70°C). |
Use Scenario: RF amplification in portable FM radio receivers covering 76–108 MHz band. IC Role / Device Role / Timing Role: Single-supply, low-power VHF amplifier enabling battery-operated designs. Use Value: 250 mW channel power dissipation and 6 V VDS rating support 3.3 V or 5 V supply operation with headroom for transient peaks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar VHF RF amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NE68033 | Single BBFET, SOT-343 package, |yfs| = 25 mS, PG = 27 dB @ 200 MHz, no integrated ESD diode. | Lacks dual-FET integration; requires external bias network and discrete ESD protection. | Select when board space allows separate FET placement and cost sensitivity outweighs integration benefit. |
| UPA803T | Single-gate GaAs FET, SC-70 package, |yfs| = 35 mS, NF = 0.9 dB @ 200 MHz, higher VDS rating (12 V). | Superior noise and gain but lacks dual-FET topology and built-in biasing; not drop-in compatible. | Choose for ultra-low-noise applications where discrete bias design and layout overhead are acceptable. |
Compared with NE68033 and UPA803T, the TBB1010KMWS-E uniquely combines dual-FET integration, on-die biasing, and ESD protection in a miniature SMD package-reducing BOM count by two active devices and eliminating three passive components typically needed for bias and protection in discrete alternatives.
Availability
TBB1010KMWS-E is available at Aetrix Electronics and suitable for analog TV tuners, digital terrestrial TV receivers, CATV drop amplifiers, and FM radio modules requiring stable component supply and consistent RF performance across production batches.
Supply support for TBB1010KMWS-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and mixed-signal ICs for automotive, industrial, and consumer applications.
The TBB1010KMWS-E belongs to Renesas' Twin BBFET product line, engineered specifically to reduce tuner bill-of-materials and PCB area in broadcast receiver front-ends while maintaining VHF RF performance and reliability.
FAQ
What is the primary function of the TBB1010KMWS-E in RF tuner designs?
The TBB1010KMWS-E serves as a dual-channel VHF RF amplifier with integrated biasing, primarily used in the first amplification stage of analog and digital TV tuners. Its twin BBFET structure allows simultaneous amplification of signal paths while minimizing external components. The TBB1010KMWS-E delivers 30 dB power gain and 1.1 dB noise figure at 200 MHz, making it ideal for broadcast signal conditioning before downconversion.
Does the TBB1010KMWS-E require external bias resistors, and if so, how are they configured?
Yes-the TBB1010KMWS-E uses an external gate resistor (RG = 120 kΩ typical) connected to Gate-2 to set the operating point for both FETs. Gate-1(1) and Gate-1(2) accept RF input directly, while Gate-2 controls DC bias current. This configuration eliminates separate bias networks for each FET, reducing component count. The TBB1010KMWS-E datasheet specifies RG = 120 kΩ for optimal ID(op) = 16 mA and PG = 30 dB performance.
What is the meaning of "KM" marking on the TBB1010KMWS-E package?
The "KM" marking is the device-specific identification code printed on the top surface of the CMPAK-6 package, confirming the TBB1010KMWS-E variant per Renesas' ordering nomenclature. It distinguishes this version from other TBB1010 suffixes (e.g., KMTL-E) and verifies conformance to the R07DS0316EJ0600 datasheet revision. The TBB1010KMWS-E marking aligns with Renesas' PTSP0006JA-A package specification and thermal rating.
Can the TBB1010KMWS-E be used in 5 V supply systems, and what are the key voltage limits?
Yes-the TBB1010KMWS-E is fully compatible with 5 V supply systems. Its absolute maximum ratings specify VDS = 6 V and VG1S/VG2S = +6 V, providing 1 V headroom for reliable operation. Typical biasing uses VDS = 5 V, VG1 = 5 V, and VG2S = 4 V. Exceeding these values risks permanent damage; the TBB1010KMWS-E must not be operated above 6 V on any terminal.
How does the built-in ESD protection in the TBB1010KMWS-E compare to external TVS diodes in tuner applications?
The TBB1010KMWS-E integrates ESD-absorbing diodes rated for 200 V HBM (C = 200 pF, Rs = 0), eliminating the need for discrete TVS devices on RF input lines. This reduces insertion loss, avoids parasitic capacitance from external components, and saves PCB space. Unlike external TVS diodes, the on-die protection is co-located with the FET gates, offering faster clamping response-critical for preserving RF integrity in tuner front-ends. The TBB1010KMWS-E's ESD structure is validated per JEDEC JS-001.
TBB1010KMWS-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Configuration:
- -
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- -
- Voltage - Rated:
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- Grade:
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TBB1010KMWS-E FAQ
1.How can I place an order for TBB1010KMWS-E through Aetrix?
Please submit a Request for Quotation (RFQ) for TBB1010KMWS-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TBB1010KMWS-E reliable?
The price and inventory of TBB1010KMWS-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TBB1010KMWS-E is usually 5 days.
3.What payment methods are accepted for TBB1010KMWS-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TBB1010KMWS-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TBB1010KMWS-E?
TBB1010KMWS-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TBB1010KMWS-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TBB1010KMWS-E?
For technical support, including TBB1010KMWS-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TBB1010KMWS-E requirements.
6.How does Aetrix verify that TBB1010KMWS-E is sourced from the original manufacturer or authorized distributors?
All TBB1010KMWS-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TBB1010KMWS-E meets industry standards.
7.What is the process for return or replacement of TBB1010KMWS-E?
All TBB1010KMWS-E units undergo pre-shipment inspection (PSI). If there is an issue with TBB1010KMWS-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TBB1010KMWS-E part is unused and in its original packaging.
Return procedure for TBB1010KMWS-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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