Renesas TBB1016RMTL-E

Overview

TBB1016RMTL-E from Renesas Electronics is a twin built-in biasing circuit MOS FET IC designed for VHF/VHF RF amplifier stages in tuner front-ends. It delivers 32 dB power gain and 1.0 dB noise figure at 200 MHz, operates from a 5 V supply, and integrates two matched BBFETs in a compact CMPAK-6 package to reduce board space and component count in broadcast receiver designs.

For engineers reviewing the TBB1016RMTL-E datasheet, TBB1016RMTL-E pinout, TBB1016RMTL-E application, or TBB1016RMTL-E equivalent, this page provides verified electrical parameters, validated pin functions, confirmed tuner-specific use cases, and two technically documented alternative parts with explicit functional and layout implications.

Technical Context

The TBB1016RMTL-E integrates two independent N-channel silicon MOSFETs with on-chip gate bias networks enabling stable DC operation without external resistors. Each FET shares a common source terminal and supports independent gate control (Gate-1(1)/Gate-1(2) and Gate-2), allowing dual-stage amplification or balanced configuration in RF signal paths.

Its design targets world-standard analog/digital TV and FM radio tuners, with specified performance across 50–1000 MHz. The device uses a glass-epoxy board thermal reference (50 mm × 40 mm × 1 mm) for channel power dissipation ratings and maintains low interstage coupling via isolated gate terminals and controlled Ciss/Coss values (2.2 pF / 1.3 pF typical).

Key Specifications

Pinout & Package

Package: CMPAK-6 (JEITA SC-88), 1.8 mm × 1.15 mm × 0.9 mm, mass 0.006 g, marking "RM".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar VHF/VHF RF amplifier applications.

Compared with NE68033R and UPA803T, the TBB1016RMTL-E uniquely delivers matched dual-FET functionality in one CMPAK-6 package, eliminating four external bias resistors and reducing layout sensitivity-critical for high-yield tuner manufacturing and miniaturized form factors.

Availability

TBB1016RMTL-E is available at Aetrix Electronics and suitable for analog/digital TV tuners, FM radio receivers, CATV set-top boxes, and dual-standard broadcast tuners requiring stable component supply and long-term production continuity.

Supply support for TBB1016RMTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and RF solutions for industrial, automotive, and consumer electronics.

The TBB1016RMTL-E belongs to Renesas' Twin Built-in Biasing Circuit MOS FET IC product line, engineered specifically for cost-optimized, space-constrained broadcast tuner RF front-ends requiring low-noise, high-gain amplification without external bias components.

FAQ

What is the maximum operating frequency range specified for the TBB1016RMTL-E?

The TBB1016RMTL-E is characterized from 50 MHz to 1000 MHz, with key RF parameters (PG, NF, S-parameters) fully specified across this band. At 1000 MHz, S21 magnitude remains 3.43 (10.7 dB), confirming usable gain up to 1 GHz. Performance above 1 GHz is not guaranteed or tested per the R07DS0318EJ0400 datasheet, and design margins should be applied for edge-of-band operation. The TBB1016RMTL-E is optimized for VHF/UHF broadcast bands-not microwave or cellular frequencies.

Does the TBB1016RMTL-E require external bias resistors for normal operation?

No, the TBB1016RMTL-E incorporates built-in biasing circuits for both FETs, eliminating the need for external gate bias resistors in standard configurations. The datasheet test circuit uses only a single 120 kΩ resistor (RG) connected to Gate-2 for gain control, while Gate-1(1) and Gate-1(2) are driven directly by 5 V DC. This integrated bias architecture reduces component count, improves thermal stability, and avoids layout-induced mismatch between the two FETs-key advantages over discrete MOSFET solutions like the UPA803T or NE68033R. The TBB1016RMTL-E's internal structure enables true "bias-free" operation when Gate-2 is fixed.

What is the thermal derating behavior of the TBB1016RMTL-E above 25°C ambient?

The TBB1016RMTL-E's maximum channel power dissipation (Pch) is rated at 250 mW on a standard glass-epoxy board (50 mm × 40 mm × 1 mm). Its derating curve shows linear reduction starting at 25°C: Pch decreases by approximately 2.5 mW/°C above ambient. At 85°C ambient, usable Pch drops to ~100 mW. This reflects the device's 150°C channel temperature limit and package thermal resistance. For sustained operation in enclosed tuners, designers must ensure board copper area and airflow maintain case temperature below 85°C. The TBB1016RMTL-E does not include thermal shutdown; system-level protection is required.

Can the two FETs inside the TBB1016RMTL-E be operated independently in different signal paths?

Yes, the TBB1016RMTL-E supports fully independent operation of FET1 and FET2. Drain(1) and Drain(2) are electrically isolated, Gate-1(1) and Gate-1(2) accept separate RF inputs or bias points, and Gate-2 controls both transconductances simultaneously. The datasheet provides separate measurement setups for each FET, confirming independent DC biasing and RF characterization. This enables dual-path architectures-for example, one FET for VHF and the other for UHF-or cascode configurations where Drain(1) feeds Gate-1(2). The TBB1016RMTL-E's pinout and internal isolation make it suitable for such flexible RF routing without cross-talk penalties.

Is the TBB1016RMTL-E RoHS compliant and lead-free?

Yes, the TBB1016RMTL-E is RoHS compliant and lead-free, as confirmed by Renesas' environmental compliance documentation and the "E" suffix in its ordering code (per R07DS0318EJ0400, Page 10). It meets EU Directive 2011/65/EU requirements, with lead content <1000 ppm and absence of restricted substances including cadmium, mercury, hexavalent chromium, PBB, and PBDE. The CMPAK-6 package uses matte tin plating on copper leads. No exemptions apply. The TBB1016RMTL-E is suitable for consumer electronics manufacturing in global markets requiring full RoHS conformance.