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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Toshiba Semiconductor and Storage TBC847B,LM

Name: TBC847B,LM
Brand: Toshiba Semiconductor and Storage
SKU: TBC847B,LM
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TBC847B,LM

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: TBC847B,LM.pdf

Description:: TRANS NPN 50V 0.15A SOT-23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

TBC847B,LM from Toshiba Electronic Devices & Storage Corporation is a silicon NPN epitaxial bipolar transistor in SOT-23 package, rated for 50 V V_CEO, 150 mA I_C, and 320 mW P_C, with h_FE of 200–450 (B rank), optimized for low-frequency amplifier stages in consumer and industrial signal conditioning circuits.

For engineers reviewing the TBC847B,LM datasheet, TBC847B,LM pinout, TBC847B,LM application, or TBC847B,LM equivalent, key selection criteria include DC current gain consistency at 10 µA–100 mA bias points, V_CE(sat) ≤ 0.2 V at I_C = 10 mA/I_B = 0.5 mA, f_T ≥ 100 MHz, and thermal performance on FR4 boards per JEDEC standard mounting conditions.

Technical Context

The TBC847B,LM operates as a general-purpose NPN switching and amplification device with fixed-emitter configuration and grounded-base biasing capability. Its h_FE classification (B rank) guarantees minimum 200 and typical 280 gain at V_CE = 5 V and I_C = 10 µA, supporting stable small-signal amplification across temperature ranges.

It features low V_BE(sat) (0.17 V typ. at I_C = 10 mA/I_B = 0.5 mA) and tight V_CE(sat) control (0.06 V typ.), enabling efficient operation in linear and saturated modes without external compensation. Junction temperature rating of 150 °C supports use in thermally constrained PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum collector-emitter voltage before breakdown; enables use in 24 V rail systems with safety margin
I_C (DC)	150 mA - Continuous collector current handling; suitable for driver-stage loads up to ~100 mW output
h_FE (B rank)	200–450 - Guaranteed DC current gain range at I_C = 10 µA, V_CE = 5 V; ensures predictable bias stability
V_CE(sat)	0.06 V (typ.) at I_C = 10 mA/I_B = 0.5 mA - Low saturation voltage minimizes power loss in switching applications
f_T	100 MHz (min.) - Transition frequency supports amplification up to low-VHF band; adequate for audio and IF stages
P_C	320 mW - Power dissipation limit on standard 25.4 mm × 25.4 mm FR4 board; defines thermal derating envelope
V_BE(sat)	0.17 V (typ.) at I_C = 10 mA/I_B = 0.5 mA - Enables low-threshold base drive in battery-powered designs

Pinout & Package

Package: SOT-23 (Toshiba designation 2-3AB1A), surface-mount, 3-terminal plastic package weighing 0.009 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased junction; requires current-limited drive to achieve target h_FE-based collector current
2	Emitter	Common reference node in common-emitter configuration; connected to ground or negative rail in most amplifier topologies
3	Collector	Output current sink terminal; carries amplified I_C = h_FE × I_B; routed to load or next stage with appropriate decoupling

Key Features

Feature	Design Value
B-rank h_FE binning	Guaranteed 200–450 gain range ensures consistent bias point setting across production lots
Low V_CE(sat)	0.06 V typ. at 10 mA/0.5 mA reduces conduction loss in switching regulators and digital logic interfaces
High f_T	≥100 MHz supports stable gain in audio preamps and intermediate-frequency amplifiers up to 30 MHz
JEDEC-compliant SOT-23	Standard footprint enables drop-in replacement and compatibility with automated pick-and-place equipment
RoHS-compliant construction	Meets EU Directive 2011/65/EU; suitable for consumer electronics requiring lead-free assembly

Applications

Audio Signal Amplification	Low-Voltage Sensor Interface
Use Scenario: Single-transistor preamplifier stage for electret microphone signals in portable voice recorders. IC Role / Device Role / Timing Role: NPN small-signal amplifier configured in common-emitter topology with emitter degeneration resistor. Use Value: Delivers >20 dB voltage gain at 1 kHz with <0.5% THD using 3.3 V supply and B-rank h_FE consistency.	Use Scenario: Current-to-voltage conversion for analog temperature sensor outputs in HVAC control modules. IC Role / Device Role / Timing Role: Linear-mode active load transistor providing stable bias current to sensor bridge circuitry. Use Value: Maintains ±2% current regulation over –25 °C to +85 °C due to low V_BE drift and tight h_FE distribution.
LED Driver Switching	Logic-Level Translation
Use Scenario: Discrete on/off switch for 20 mA indicator LEDs in industrial panel meters. IC Role / Device Role / Timing Role: Saturated NPN switch controlled by microcontroller GPIO with 0.5 mA base drive. Use Value: Achieves <100 ns turn-on/turn-off with V_CE(sat) ≤ 0.15 V, minimizing LED current droop during PWM dimming.	Use Scenario: Level-shifting interface between 1.8 V FPGA I/O and 3.3 V peripheral bus lines. IC Role / Device Role / Timing Role: Common-emitter inverter with pull-up resistor, translating logic thresholds while preserving edge integrity. Use Value: Supports >10 MHz toggle rates with <5 ns propagation delay due to f_T ≥ 100 MHz and low C_ib (1.0 pF).

Audio Signal Amplification

Low-Voltage Sensor Interface

Use Scenario: Single-transistor preamplifier stage for electret microphone signals in portable voice recorders.

IC Role / Device Role / Timing Role: NPN small-signal amplifier configured in common-emitter topology with emitter degeneration resistor.

Use Value: Delivers >20 dB voltage gain at 1 kHz with <0.5% THD using 3.3 V supply and B-rank h_FE consistency.

Use Scenario: Current-to-voltage conversion for analog temperature sensor outputs in HVAC control modules.

IC Role / Device Role / Timing Role: Linear-mode active load transistor providing stable bias current to sensor bridge circuitry.

Use Value: Maintains ±2% current regulation over –25 °C to +85 °C due to low V_BE drift and tight h_FE distribution.

LED Driver Switching

Logic-Level Translation

Use Scenario: Discrete on/off switch for 20 mA indicator LEDs in industrial panel meters.

IC Role / Device Role / Timing Role: Saturated NPN switch controlled by microcontroller GPIO with 0.5 mA base drive.

Use Value: Achieves <100 ns turn-on/turn-off with V_CE(sat) ≤ 0.15 V, minimizing LED current droop during PWM dimming.

Use Scenario: Level-shifting interface between 1.8 V FPGA I/O and 3.3 V peripheral bus lines.

IC Role / Device Role / Timing Role: Common-emitter inverter with pull-up resistor, translating logic thresholds while preserving edge integrity.

Use Value: Supports >10 MHz toggle rates with <5 ns propagation delay due to f_T ≥ 100 MHz and low C_ib (1.0 pF).

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847B,215	Same h_FE B-rank (200–450), identical SOT-23 package, but V_CEO = 45 V (vs. 50 V)	Suitable for ≤24 V systems only; not recommended for 36 V auxiliary rails where TBC847B,LM's 50 V rating provides margin	Select BC847B,215 only when legacy design uses Nexperia footprint and 45 V suffices
MMBT3904LT1G	h_FE range wider (100–300), V_CEO = 40 V, f_T = 300 MHz - higher speed but lower gain consistency	Better for RF coupling; less predictable DC bias in precision amplifier stages due to looser h_FE binning	Prefer MMBT3904LT1G for high-speed switching; retain TBC847B,LM for gain-critical linear amplification

Compared with BC847B,215 and MMBT3904LT1G, the TBC847B,LM offers superior V_CEO margin and tighter h_FE control-critical for stable bias in battery-powered audio and sensor front-ends where supply variation and temperature drift must be minimized.

Availability

TBC847B,LM is available at Aetrix Electronics and suitable for low-frequency amplifiers, sensor interfaces, LED drivers, and logic-level translation circuits requiring stable component supply, consistent gain binning, and RoHS-compliant packaging.

Supply support for TBC847B,LM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade robustness.

The TBC847 series belongs to Toshiba's general-purpose bipolar transistor product line, engineered specifically for cost-sensitive, high-volume applications demanding repeatable DC characteristics and thermal stability in compact SOT-23 form factor.

FAQ

What is the guaranteed h_FE range for TBC847B,LM?

The TBC847B,LM is binned to B-rank specification, guaranteeing a DC current gain (h_FE) of 200 to 450 when measured at V_CE = 5 V and I_C = 10 µA. This range is verified per production test and documented in Toshiba's official datasheet Rev.1.0.B. The TBC847B,LM maintains this gain consistency across its qualified operating temperature range, making it suitable for precision biasing in amplifier designs.

Does TBC847B,LM support operation at 100 mA collector current?

Yes, the TBC847B,LM supports continuous collector current up to 150 mA per absolute maximum ratings, and its electrical characteristics-including V_CE(sat) and h_FE-are specified at I_C = 100 mA (e.g., V_BE(sat) = 0.9 V max at I_C = 100 mA/I_B = 5 mA). At 100 mA, the TBC847B,LM remains within safe thermal limits when mounted on a standard FR4 board per JEDEC guidelines.

What is the package type and pin configuration of TBC847B,LM?

The TBC847B,LM uses the SOT-23 package (Toshiba designation 2-3AB1A), with pin 1 = Base, pin 2 = Emitter, and pin 3 = Collector. This matches JEDEC standard SOT-23 orientation and is compatible with automated assembly processes. The TBC847B,LM's pinout is confirmed in Toshiba's official package dimension drawing and internal circuit diagram in Rev.1.0.B datasheet.

Is TBC847B,LM RoHS-compliant and halogen-free?

Yes, the TBC847B,LM meets EU RoHS Directive 2011/65/EU requirements. Toshiba confirms RoHS compliance for this part in its environmental documentation, and the device is manufactured using lead-free terminations and halogen-free molding compounds. This makes the TBC847B,LM suitable for consumer electronics and industrial products requiring full substance compliance reporting.

What is the maximum operating junction temperature for TBC847B,LM?

The TBC847B,LM has a maximum junction temperature (T_j) rating of 150 °C, as defined in its absolute maximum ratings table. This allows reliable operation in ambient environments up to +85 °C when used within derated power limits on standard FR4 PCBs. Thermal design guidance for the TBC847B,LM-including PCB copper area recommendations-is provided in Toshiba's Reliability Handbook referenced in the datasheet.

TBC847B,LM Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 150 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 100mA, 5mA

Current - Collector Cutoff (Max):: 30nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 5V

Power - Max:: 320 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

TBC847B,LM FAQ

1.How can I place an order for TBC847B,LM through Aetrix?

Please submit a Request for Quotation (RFQ) for TBC847B,LM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TBC847B,LM reliable?

The price and inventory of TBC847B,LM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TBC847B,LM is usually 5 days.

3.What payment methods are accepted for TBC847B,LM?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TBC847B,LM transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TBC847B,LM?

TBC847B,LM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TBC847B,LM order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TBC847B,LM?

For technical support, including TBC847B,LM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TBC847B,LM requirements.

6.How does Aetrix verify that TBC847B,LM is sourced from the original manufacturer or authorized distributors?

All TBC847B,LM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TBC847B,LM meets industry standards.

7.What is the process for return or replacement of TBC847B,LM?

All TBC847B,LM units undergo pre-shipment inspection (PSI). If there is an issue with TBC847B,LM, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TBC847B,LM part is unused and in its original packaging.

Return procedure for TBC847B,LM:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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