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Toshiba Semiconductor and Storage TBC857B,LM
- Part No.:
- TBC857B,LM
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
TBC857B,LM.pdf
- Description:
- TRANS PNP 50V 0.15A SOT-23-3
- Quantity:
- Payment:
- Shipping:
Inventory:13,436
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Product details
Overview
TBC857B,LM from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial bipolar junction transistor in SOT-23 package, rated for VCEO = −50 V, IC = −150 mA DC, and hFE = 210–475 (B rank), designed for low-frequency amplification and switching in compact consumer and industrial signal-path circuits.
For engineers reviewing the TBC857B,LM datasheet, TBC857B,LM pinout, TBC857B,LM application, or TBC857B,LM equivalent, key selection criteria include guaranteed hFE classification, low VCE(sat) at −10 mA/−0.5 mA drive, SOT-23 thermal performance on FR4, and compatibility with legacy PNP bias networks requiring −5 V VEBO margin.
Technical Context
The TBC857B,LM operates as a general-purpose PNP BJT with fixed-emitter bias topology support, optimized for linear amplification up to fT = 80 MHz and saturated switching with VCE(sat) ≤ −0.3 V at IC = −10 mA / IB = −0.5 mA. Its −50 V VCBO and −5 V VEBO ratings enable use in negative-rail interface stages and level-shifting nodes.
Thermal design relies on its 320 mW PC rating under standard JEDEC conditions (25.4 mm × 25.4 mm × 1.6 mm FR4, 0.42 mm² Cu pad × 3), with Tj max = 150 °C and Tstg = −55 to +150 °C - confirming suitability for non-automotive industrial ambient environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Maximum collector-emitter voltage before breakdown; supports operation in −48 V telecom or −24 V industrial control rails. |
| IC (DC) | −150 mA: Continuous collector current capability; sufficient for driving small relays, LED arrays, or preamp stage loads. |
| hFE (B rank) | 210–475 at VCE = −5 V, IC = −2 mA: Tight DC gain binning enables predictable bias point stability in amplifier feedback networks. |
| VCE(sat) | ≤ −0.3 V at IC = −10 mA / IB = −0.5 mA: Low saturation voltage minimizes power loss and heating in switching applications. |
| fT | 80 MHz: Transition frequency confirms usable bandwidth for audio and sub-MHz signal conditioning without instability. |
| Cob | 4 pF at VCB = −10 V: Low output capacitance preserves high-frequency response in cascode or buffer configurations. |
Pinout & Package
Package: SOT-23 (Toshiba designation 2-3AB1A), surface-mount, 3-terminal plastic package with 0.009 g typical mass and standard JEDEC footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Current-controlled input node; requires external bias resistor network referenced to emitter for active-mode operation. |
| 2 | Emitter | Common terminal for PNP configuration; connected to higher potential rail (e.g., VCC) in common-emitter amplifiers. |
| 3 | Collector | Output current sink node; delivers amplified or switched current to load tied between collector and ground/negative rail. |
Key Features
| Feature | Design Value |
|---|---|
| PNP polarity with −50 V VCEO | Enables direct replacement of legacy PNP transistors in negative-supply signal chains without topology change. |
| B-rank hFE binning (210–475) | Reduces need for gain-trimming resistors in production amplifiers, improving yield and consistency across batches. |
| VBE(sat) ≤ −0.65 V at IC = −100 mA | Ensures reliable turn-on with modest base drive, easing interface with microcontroller GPIOs or logic buffers. |
| Low noise figure (NF ≤ 10 dB) | Supports use in low-level analog front-ends where signal integrity in audio or sensor interfaces is critical. |
Applications
| Audio Pre-amplifier Stage | Industrial Level Shifter |
|---|---|
Use Scenario: Amplifying weak microphone or piezoelectric sensor signals in battery-powered portable audio devices. IC Role / Device Role / Timing Role: PNP common-emitter amplifier providing 20–30 dB voltage gain with minimal distortion. Use Value: B-rank hFE ensures consistent gain across units; low NF ≤ 10 dB preserves signal-to-noise ratio in first-stage amplification. |
Use Scenario: Translating logic-level signals from a 3.3 V MCU to control −12 V solenoid drivers in factory automation PLC I/O modules. IC Role / Device Role / Timing Role: High-side switch enabling negative-rail load activation with fast turn-off via base pull-up. Use Value: VCEO = −50 V provides 4× safety margin over −12 V rail; VCE(sat) ≤ −0.3 V limits power dissipation during sustained ON state. |
| LED Current Sink Driver | Discrete Op-Amp Input Pair |
Use Scenario: Driving multiplexed indicator LEDs in medical diagnostic equipment panels requiring precise current regulation. IC Role / Device Role / Timing Role: Constant-current sink configured with emitter resistor, controlled by PWM or analog voltage. Use Value: IC = −150 mA rating supports up to 100 mA LED strings; tight hFE binning improves current matching across parallel channels. |
Use Scenario: Forming the differential input pair in a discrete instrumentation amplifier for high-impedance sensor readout. IC Role / Device Role / Timing Role: Matched PNP pair (with complementary NPN) establishing stable DC bias and common-mode rejection. Use Value: Low Cob = 4 pF minimizes Miller effect; fT = 80 MHz supports >1 MHz closed-loop bandwidth in precision gain stages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP bipolar transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC857B,215 | Same hFE B-rank (200–450), identical SOT-23 pinout, but VCEO = −45 V and PC = 300 mW. | Suitable for ≤ −40 V rails; lower power rating may limit continuous current in thermally constrained layouts. | Select when sourcing flexibility is prioritized and −45 V rating suffices; verify thermal margin on target PCB. |
| MMBT857 | Identical electrical specs and SOT-23 package, but manufactured by ON Semiconductor with RoHS-compliant plating and different traceability marking. | No functional deviation; qualified for same industrial temperature range and reliability testing protocols. | Preferred for dual-sourcing programs requiring second-source qualification without redesign or requalification. |
Compared with BC857B,215 and MMBT857, the TBC857B,LM offers the highest VCEO rating (−50 V) and slightly higher power dissipation (320 mW), making it optimal for designs operating near −48 V telecom standards or requiring extended thermal headroom on standard FR4.
Availability
TBC857B,LM is available at Aetrix Electronics and suitable for low-frequency amplifiers, industrial level shifters, LED current sink drivers, and discrete op-amp input pairs requiring stable component supply and consistent B-rank hFE performance.
Supply support for TBC857B,LM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade robustness.
The TBC857B,LM belongs to Toshiba's general-purpose bipolar transistor product line, engineered for cost-sensitive, space-constrained applications demanding predictable DC gain, low saturation voltage, and proven thermal behavior on standard PCBs.
FAQ
What is the maximum continuous collector current rating for the TBC857B,LM?
The TBC857B,LM has a maximum DC collector current rating of −150 mA, specified at Ta = 25 °C on a standard 25.4 mm × 25.4 mm × 1.6 mm FR4 board. This rating assumes proper thermal management; derating is required above 25 °C ambient per the PC–Ta curve in the datasheet. The TBC857B,LM maintains safe operation up to its 320 mW power dissipation limit under these conditions.
Does the TBC857B,LM have a guaranteed hFE range, and what does "B rank" mean?
Yes - the TBC857B,LM is binned to the B rank, guaranteeing a DC current gain (hFE) between 210 and 475 when measured at VCE = −5 V and IC = −2 mA. This tight specification allows predictable biasing in amplifier and switching circuits without gain compensation. The TBC857B,LM's B-rank binning is verified per Toshiba's production test flow and documented in Rev.1.0.B of its datasheet.
What is the pin configuration of the TBC857B,LM in the SOT-23 package?
The TBC857B,LM uses standard SOT-23 pinout: Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector - confirmed in Toshiba's "Packaging and Internal Circuit" section and package drawing. This matches JEDEC MO-215 and is identical to BC857 and MMBT857 variants. The TBC857B,LM's 2-3AB1A package outline ensures mechanical compatibility with automated pick-and-place equipment.
Can the TBC857B,LM be used in switching applications, and what is its typical VCE(sat)?
Yes - the TBC857B,LM is qualified for switching use, with VCE(sat) ≤ −0.3 V at IC = −10 mA and IB = −0.5 mA. At higher currents (IC = −100 mA), VCE(sat) remains ≤ −0.65 V, supporting efficient low-side or high-side switching. The TBC857B,LM's fast turn-off characteristics and low Cob make it suitable for <100 kHz digital control paths.
Is the TBC857B,LM RoHS compliant and lead-free?
Yes - the TBC857B,LM is RoHS compliant and lead-free, as confirmed by Toshiba's environmental documentation and marking specifications. It meets EU Directive 2011/65/EU requirements, with homogeneous material analysis verifying Pb content < 0.1 wt%. The TBC857B,LM's termination finish and packaging adhere to Toshiba's standard green manufacturing practices, including halogen-free molding compound.
TBC857B,LM Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 150 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 650mV @ 100mA, 5mA
- Current - Collector Cutoff (Max):
- 30nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 210 @ 2mA, 5V
- Power - Max:
- 320 mW
- Frequency - Transition:
- 80MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
TBC857B,LM FAQ
1.How can I place an order for TBC857B,LM through Aetrix?
Please submit a Request for Quotation (RFQ) for TBC857B,LM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TBC857B,LM reliable?
The price and inventory of TBC857B,LM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TBC857B,LM is usually 5 days.
3.What payment methods are accepted for TBC857B,LM?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TBC857B,LM transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TBC857B,LM?
TBC857B,LM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TBC857B,LM order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TBC857B,LM?
For technical support, including TBC857B,LM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TBC857B,LM requirements.
6.How does Aetrix verify that TBC857B,LM is sourced from the original manufacturer or authorized distributors?
All TBC857B,LM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TBC857B,LM meets industry standards.
7.What is the process for return or replacement of TBC857B,LM?
All TBC857B,LM units undergo pre-shipment inspection (PSI). If there is an issue with TBC857B,LM, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TBC857B,LM part is unused and in its original packaging.
Return procedure for TBC857B,LM:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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