Toshiba Semiconductor and Storage TBD62381AFWG,EL

Overview

TBD62381AFWG,EL from Toshiba Electronic Devices & Storage Corporation is an 8-channel DMOS transistor array designed for high-voltage, medium-current switching in industrial and appliance control systems. It delivers 500 mA per channel, supports up to 50 V output voltage, operates with input logic levels from 2.0 V to 25 V, and uses a P-SOP18-0812-1.27-001 surface-mount package.

For engineers reviewing the TBD62381AFWG,EL datasheet, TBD62381AFWG,EL pinout, TBD62381AFWG,EL application, or TBD62381AFWG,EL equivalent, key selection criteria include per-channel R_ON (≤0.875 V at 350 mA), thermal derating on PCB (10.48 mW/°C), and absence of built-in overcurrent or overvoltage protection circuits.

Technical Context

The TBD62381AFWG,EL integrates eight independent N-channel DMOS transistors with common source tied to GND and drain outputs routed to pins O1–O8. Each channel features low ON-resistance operation without external gate drivers, enabling direct TTL/CMOS-compatible input control (2.0–25 V) and high-voltage load switching up to 50 V.

It lacks internal clamp diodes or protection circuitry, requiring external flyback diodes for inductive loads and external fusing on the VCC line. Thermal performance is defined for a specific PCB layout (75 mm × 114 mm, 20% Cu area), with maximum power dissipation of 1.31 W at 25°C ambient and linear derating beyond that point.

Key Specifications

Pinout & Package

Package: P-SOP18-0812-1.27-001 - 18-pin plastic SOP with 1.27 mm pitch, 8.1 mm × 12.0 mm body, 0.5 g typical weight, RoHS-compliant lead finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage transistor array applications.

Compared with TBD62381AFWG,EL, TBD62781AFWG,EL offers enhanced inductive load safety at reduced current capacity, while ULN2803ADWR trades conduction loss for plug-and-play robustness in legacy 5 V logic systems - choice depends on thermal budget, protection requirements, and layout density targets.

Availability

TBD62381AFWG,EL is available at Aetrix Electronics and suitable for industrial PLC output modules, appliance motor control systems, and LED signage drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TBD62381AFWG,EL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures power semiconductors, logic ICs, and storage solutions for industrial, automotive, and consumer applications.

The TBD62381AFWG,EL belongs to Toshiba's BiCD DMOS transistor array product line, engineered for high-voltage, medium-current switching in space-constrained industrial control and home appliance applications.

FAQ

What is the maximum continuous output current per channel for TBD62381AFWG,EL?

The TBD62381AFWG,EL supports up to 400 mA per channel under standard test conditions (1 circuit ON, T_a = 25°C). At elevated ambient temperatures (e.g., 85°C) and with all 8 channels active, the rated current drops to 400 mA at 10% duty cycle and 192 mA at 50% duty cycle due to thermal limits. These values assume the specified PCB layout (75 mm × 114 mm, 20% Cu area) and proper derating per datasheet note 3.

Does TBD62381AFWG,EL include built-in protection circuits?

No, the TBD62381AFWG,EL does not incorporate built-in overcurrent, overvoltage, or thermal protection circuits. Toshiba explicitly states this in the "Precautions for Using" section. External safeguards - including fuses on the VCC line, flyback diodes across inductive loads, and appropriate PCB copper area for heat dissipation - are mandatory to prevent device failure. The TBD62381AFWG,EL must be used within its absolute maximum ratings at all times.

What is the recommended input voltage range to reliably turn on a channel in TBD62381AFWG,EL?

The TBD62381AFWG,EL specifies an input voltage range of 2.0 V to 25 V for reliable channel turn-on. Inputs ≥2.0 V (with V_CC = 5.5 V) guarantee full conduction (I_OUT ≥100 mA), while inputs ≤0.6 V ensure channel turn-off (I_OUT ≤100 μA). This wide input window allows direct interfacing with 3.3 V, 5 V, and 24 V logic systems without level translation.

Can TBD62381AFWG,EL drive inductive loads like relays or solenoids?

Yes, the TBD62381AFWG,EL can drive inductive loads such as relays and solenoids, but only with external flyback diodes connected across each load. Because the device lacks internal clamp diodes, unclamped inductive kickback exceeding 50 V will destroy the output transistors. Toshiba mandates external protection in the "IC Usage Considerations" section, especially for motor coils and relay coils where back-EMF is significant.

What is the thermal derating coefficient for TBD62381AFWG,EL on a standard PCB?

The TBD62381AFWG,EL has a thermal derating coefficient of 10.48 mW/°C when mounted on a PCB measuring 75 mm × 114 mm × 1.6 mm with 20% copper area (single-side glass epoxy), as defined in datasheet note 3. Starting from its maximum power dissipation of 1.31 W at 25°C, usable power must decrease linearly by 10.48 mW for every 1°C rise in ambient temperature above 25°C to maintain safe junction temperature.