Toshiba Semiconductor and Storage TBD62502AFWG,EL

Overview

TBD62502AFWG,EL from Toshiba Electronic Devices & Storage Corporation is a 7-channel sink-type DMOS transistor array IC designed for driving inductive and resistive loads in industrial control and display systems. It delivers 300 mA per channel maximum output current, supports 50 V output voltage, and operates with input logic thresholds of 14 V (ON) and 7.0 V (OFF), making it suitable for high-voltage interface applications such as LED signage drivers and relay interface modules.

For engineers reviewing the TBD62502AFWG,EL datasheet, TBD62502AFWG,EL pinout, TBD62502AFWG,EL application, or TBD62502AFWG,EL equivalent, this device requires attention to thermal derating (10 mW/°C above 25°C), GND layout integrity, and external flyback protection when driving inductive loads - critical considerations during PCB layout and system-level reliability validation.

Technical Context

The TBD62502AFWG,EL integrates seven independent N-channel DMOS sink drivers in a single P-SOP16-0410-1.27-002 package. Each channel features no internal protection circuitry, requiring external clamping diodes for inductive loads and careful grounding to prevent latch-up or destruction due to short-circuit faults.

It operates across −40 to +85°C ambient temperature, with absolute maximum output voltage of 50 V and power dissipation rated at 1.25 W under JEDEC 2s2p board conditions. Input logic compatibility is TTL/CMOS-level but requires ≥14 V to guarantee full turn-on, distinguishing it from low-voltage variants like the TBD62503A series.

Key Specifications

Pinout & Package

Packaged in P-SOP16-0410-1.27-002 (16-pin plastic SOP, 1.27 mm pitch, 4.1 × 10 mm body), with exposed thermal pad for enhanced heat transfer. Pin 9 is NC (non-connected); pins 1–7 are digital inputs; pins 10–16 are open-drain outputs; pin 8 is common GND.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar sink-driver array applications.

Compared with TBD62502AFG,EL, the TBD62502AFWG,EL offers 2× higher power dissipation margin and improved thermal performance on JEDEC-compliant boards; versus ULN2803ADWR, it provides faster switching and lower conduction loss but requires external flyback protection.

Availability

TBD62502AFWG,EL is available at Aetrix Electronics and suitable for industrial automation, LED display manufacturing, and automotive instrumentation requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TBD62502AFWG,EL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor components for industrial, automotive, and consumer applications, with emphasis on power efficiency and robustness.

The TBD62502AFWG,EL belongs to Toshiba's BiCD DMOS transistor array product line, engineered specifically for high-voltage, medium-current interface applications where discrete transistor replacement and thermal resilience are critical.

FAQ

What is the maximum continuous output current per channel for TBD62502AFWG,EL?

The TBD62502AFWG,EL supports up to 300 mA per channel continuously under specified thermal conditions. At ambient temperatures above 25°C, power dissipation must be derated by 10 mW/°C. Sustained 300 mA operation across all 7 channels requires adherence to JEDEC 2s2p board layout guidelines and proper copper thermal relief.

Does TBD62502AFWG,EL include built-in flyback diodes for inductive loads?

No, the TBD62502AFWG,EL does not integrate any protection circuitry. External flyback diodes must be placed across each inductive load (e.g., relay coil or solenoid) to suppress back-EMF and prevent device destruction. This is explicitly stated in Toshiba's usage precautions and confirmed in the "Precautions for Using" section of the datasheet.

Can TBD62502AFWG,EL be driven directly by a 5 V microcontroller GPIO?

No - the TBD62502AFWG,EL requires a minimum input voltage of 14 V to ensure reliable turn-on (VIN(ON) = 14 V min). A 5 V GPIO cannot activate the outputs fully; level-shifting circuitry (e.g., dedicated gate driver or resistor-divider + transistor stage) is mandatory for compatibility with 3.3 V or 5 V logic systems.

What is the function of Pin 9 (NC) on TBD62502AFWG,EL?

Pin 9 on the TBD62502AFWG,EL is designated NC (No Connection) and is internally unconnected. It must remain unconnected on the PCB - no trace, via, or solder mask opening should be applied. Routing or grounding Pin 9 may cause unpredictable behavior or damage due to internal structure constraints.

How does thermal performance differ between TBD62502AFWG,EL and TBD62502AFG,EL?

The TBD62502AFWG,EL has a higher power dissipation rating of 1.25 W (JEDEC 2s2p) versus 0.625 W for TBD62502AFG,EL. This 2× thermal margin allows the TBD62502AFWG,EL to sustain higher output currents or operate in warmer ambient environments without derating, provided its P-SOP16-0410-1.27-002 package is mounted with appropriate thermal vias and copper area.