Toshiba Semiconductor and Storage TCK22911G,LF

Overview

TCK22911G,LF from Toshiba Electronic Devices & Storage Corporation is a 2 A load switch IC with true reverse current blocking, active-low control, and integrated output auto-discharge. It operates from 1.1 V to 5.5 V input, delivers 31 mΩ typical ON resistance at 5.0 V, and supports portable power rail sequencing in space-constrained mobile devices.

For engineers reviewing the TCK22911G,LF datasheet, TCK22911G,LF pinout, TCK22911G,LF application, or TCK22911G,LF equivalent, this device is selected for ultra-low quiescent current (11 μA), thermal shutdown protection, and WCSP6E package compatibility in high-density PCB layouts requiring reliable reverse-current isolation and controlled inrush.

Technical Context

The TCK22911G,LF integrates a low-R_ON N-channel MOSFET switch with slew-rate-controlled turn-on and fast turn-off (5 μs t_OFF). Its true reverse current blocking circuit (TRCB) actively prevents backflow from VOUT to VIN regardless of switch state - a full-time protection feature distinct from passive body-diode blocking.

It implements under-voltage lockout (UVLO) with 0.82 V rising threshold and 0.77 V falling threshold, plus thermal shutdown activation at ~170°C junction temperature with 20°C hysteresis. Control logic is active-low, and output auto-discharge is enabled via internal 100 Ω discharge path when OFF.

Key Specifications

Pinout & Package

Package: WCSP6E (0.8 mm × 1.2 mm, 0.55 mm height, 0.4 mm pitch), ultra-compact wafer-level chip-scale package optimized for mobile PCB density.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar load switch applications.

Compared with TCK22911G,LF, TCK22913G,LF offers identical performance with inverted control polarity, while TPS22916BYFPR trades auto-discharge for marginally lower R_ON and higher standby leakage - impacting sleep-mode energy budget in battery-critical designs.

Availability

TCK22911G,LF is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor subsystems, and USB-C peripheral detection requiring stable component supply across high-volume consumer electronics production.

Supply support for TCK22911G,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-efficiency analog and power management ICs for mobile, industrial, and automotive applications, with emphasis on miniaturization and reliability.

The TCK2291xG series targets ultra-compact, high-density power delivery in portable electronics - delivering true reverse-current blocking, thermal safety, and low-I_Q in wafer-level packages.

FAQ

What is the control logic polarity of the TCK22911G,LF?

The TCK22911G,LF features active-low control logic: the internal power switch turns ON when the Control pin voltage is below 0.4 V (V_IL) and turns OFF when above 1.0 V (V_IH at VIN > 1.2 V). This eliminates need for external level-shifting when interfacing with standard CMOS outputs. The TCK22911G,LF does not include internal pull-down on the Control pin, so it must be driven explicitly to avoid floating states.

Does the TCK22911G,LF provide reverse current blocking when the switch is OFF?

Yes - the TCK22911G,LF incorporates a dedicated true reverse current blocking (TRCB) circuit that actively prevents current flow from VOUT to VIN regardless of whether the main switch is ON or OFF. This full-time protection operates down to a 35 mV reverse voltage threshold and limits reverse leakage to ≤2 μA, eliminating reliance on MOSFET body diode characteristics.

What is the purpose of the output auto-discharge function in the TCK22911G,LF?

The output auto-discharge function in the TCK22911G,LF activates an internal 100 Ω discharge path between VOUT and GND when the device is disabled. This rapidly discharges output capacitance - typically clearing 0.1 μF loads in <10 ms - ensuring clean power-down behavior and preventing unintended wake-up or latch-up in downstream circuits. It is enabled by default in the TCK22911G,LF variant.

How does the thermal shutdown mechanism operate in the TCK22911G,LF?

The TCK22911G,LF integrates a thermal shutdown circuit that disables the power switch when junction temperature exceeds ~170°C. Once temperature falls below ~150°C due to hysteresis, the switch automatically re-enables. This cycle repeats as needed to prevent permanent damage during sustained overload or inadequate PCB thermal relief - no external intervention or reset is required for recovery.

What are the absolute maximum ratings for input voltage and output current on the TCK22911G,LF?

The TCK22911G,LF has an absolute maximum input voltage rating of −0.3 V to +6.0 V and a continuous DC output current rating of 2.0 A. It also supports 3.0 A pulsed current (100 μs, 2% duty cycle). Exceeding these limits - even briefly - risks irreversible damage. Derating is required at elevated ambient temperatures; for example, power dissipation drops from 800 mW at 25°C to ~400 mW at 85°C per Toshiba's thermal curve.