Toshiba Semiconductor and Storage TCK22925G,LF

Overview

TCK22925G,LF from Toshiba Electronic Devices & Storage Corporation is a 2 A, 25 mΩ load switch IC with slew rate control and output auto-discharge, designed for power sequencing in portable electronics. It operates from 1.1 V to 5.5 V input, delivers 3380 μs controlled VOUT rise time, and features reverse current blocking when VIN = 0 V - enabling safe power rail isolation in battery-powered mobile devices.

For engineers reviewing the TCK22925G,LF datasheet, TCK22925G,LF pinout, TCK22925G,LF application, or TCK22925G,LF equivalent, key selection criteria include verified slew-controlled turn-on timing (3380 μs), integrated auto-discharge (RSD = 100 Ω), ultra-compact WCSP6E package (0.8 mm × 1.2 mm), and guaranteed 2 A DC output capability under 1.4–5.5 V input conditions.

Technical Context

The TCK22925G,LF integrates a p-channel MOSFET pass switch with a dedicated slew rate control driver that shapes VOUT rise time to 3380 μs (VIN = 5 V, RL = 5 Ω, CL = 1.0 μF), minimizing inrush current and system-level voltage droop. Its internal discharge n-channel MOSFET (RSD = 100 Ω) actively pulls VOUT to GND when disabled, ensuring rapid rail collapse for downstream logic reset.

Reverse current blocking is implemented via an internal circuit that prevents backflow from VOUT to VIN when VIN = 0 V - confirmed by IRB ≤ 2 μA. Control logic is active-high with built-in pull-down (no external resistor required), and quiescent current remains ≤ 0.5 μA in ON state at 5.5 V, supporting always-on subsystems.

Key Specifications

Pinout & Package

Package: WCSP6E (0.8 mm × 1.2 mm, thickness 0.55 mm, 0.4 mm pitch, 1 mg typical weight) - optimized for high-density mobile PCBs with minimal board area footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar load switch applications.

Compared with TCK22925G,LF, TCK22923G,LF offers faster switching for less aggressive inrush suppression, while TCK22974G,LF removes auto-discharge to reduce cost and complexity where rail collapse timing is uncontrolled by the IC.

Availability

TCK22925G,LF is available at Aetrix Electronics and suitable for smartphone power sequencing, wireless earbud battery management, and IoT sensor node wake-up control requiring stable component supply across high-volume consumer electronics production.

Supply support for TCK22925G,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with over 50 years of analog and power management expertise.

The TCK2292xG series targets space-constrained portable electronics, delivering precision-controlled power gating with integrated protection - specifically engineered for battery-powered devices demanding ultra-low IQ, soft-start, and rail isolation.

FAQ

What is the maximum continuous output current rating for the TCK22925G,LF?

The TCK22925G,LF is rated for 2.0 A DC output current under normal operating conditions (1.4 V < VIN ≤ 5.5 V). This rating is validated per Toshiba's absolute maximum ratings table and supported by thermal performance on standard FR4 boards - enabling reliable use in camera modules, audio amplifiers, and other 2 A peak-load subsystems without external heatsinking.

Does the TCK22925G,LF include reverse current blocking, and under what condition does it activate?

Yes, the TCK22925G,LF includes built-in reverse current blocking that activates when VIN = 0 V - preventing backflow from VOUT to VIN. This is confirmed by IRB ≤ 2 μA in electrical characteristics testing. The feature functions independently of control state and remains active whether the switch is ON or OFF, making it suitable for multi-battery or shared-rail systems where input sources may be disconnected.

What is the purpose of the output auto-discharge function in the TCK22925G,LF?

The output auto-discharge function in the TCK22925G,LF uses an internal 100 Ω n-channel MOSFET to rapidly pull VOUT to GND when the device is disabled. This ensures fast rail collapse - for example, discharging a 10 μF load in under 100 ms - which meets deterministic power-down timing requirements in smartphones, wearables, and medical sensors where downstream logic must reset cleanly before next power cycle.

How does the slew rate control in the TCK22925G,LF affect system-level power integrity?

The slew rate control in the TCK22925G,LF limits VOUT rise time to 3380 μs, directly suppressing inrush current during turn-on. This prevents voltage droop on shared input rails, avoids false resets in adjacent ICs, and eliminates need for large bulk capacitors or external RC networks - improving power integrity in densely packed PCBs such as those found in flagship smartphones and compact IoT edge nodes.

Is an external pull-down resistor required on the Control pin of the TCK22925G,LF?

No, an external pull-down resistor is not required on the Control pin of the TCK22925G,LF. The device integrates a built-in pull-down resistor (equivalent to a few MΩ) between Control and GND, ensuring a defined OFF state when the pin is left floating. This simplifies design, reduces BOM count, and improves reliability in space-constrained layouts where routing a discrete resistor is impractical.