Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Toshiba Semiconductor and Storage TCKE812NL,RF

Part No.:
TCKE812NL,RF
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Current Regulation/Management
Package:
10-WFDFN Exposed Pad
Datasheet:
AetrixTCKE812NL,RF.pdf
Description:
IC ELECTRONIC FUSE 10WSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:52,356

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TCKE812NL,RF from Toshiba Electronic Devices & Storage Corporation is a 18 V, 5 A latched eFuse IC with reverse current blocking control, adjustable overcurrent protection (up to 5.0 A), and 15.1 V (typ.) overvoltage clamp. It integrates internal MOSFET switching, thermal shutdown, UVLO, and slew-rate control via external capacitor - designed for high-reliability power rail protection in 12 V systems such as HDD power supplies and battery charging circuits.

For engineers reviewing the TCKE812NL,RF datasheet, TCKE812NL,RF pinout, TCKE812NL,RF application, or TCKE812NL,RF equivalent, this page delivers verified electrical parameters, WSON10B package mapping, real-world protection timing behavior (e.g., 150 ns fast-trip response), latch-mode fault handling, and precise RILIM/CdV/dT design guidance for stable 12 V rail deployment.

Technical Context

The TCKE812NL,RF implements a single-input/single-output eFuse architecture with integrated N-channel power MOSFET and dedicated EFET gate driver for external reverse-blocking FET control. Its protection logic combines adjustable current limiting (via ILIM resistor), fixed 15.1 V overvoltage clamp, and thermal shutdown at 160°C with 20°C hysteresis.

It operates across −40°C to +85°C ambient, supports VIN from 4.4 V to 18.0 V, and uses EN/UVLO pin for dual-function enable control and programmable under-voltage lockout. Fault response is latched - requiring external reset via EN/UVLO low-to-high transition after fault clearance.

Key Specifications

ParameterValue and Actual Design Meaning
Max Input Voltage18.0 V - supports direct connection to 12 V automotive or industrial rails with margin for transients
Continuous Output Current5.0 A - enables use in high-current power distribution nodes without external current-sense amplifiers
ON Resistance28 mΩ (typ.) - minimizes conduction loss (≤140 mW at 5 A) and self-heating during sustained load
Overvoltage Clamp15.1 V (typ.) - protects downstream 12 V logic and analog circuitry from input surges exceeding rail rating
Fault Response ModeLatched - holds output off until explicit EN/UVLO reset, preventing uncontrolled auto-retry in persistent faults
Fast-Trip Delay150 ns (typ.) - detects and disables output within one nanosecond-scale cycle of hard short (≤10 mΩ)
Thermal Shutdown Threshold160°C junction - activates before silicon degradation, with 20°C hysteresis enabling safe cooldown before recovery

Pinout & Package

Package: WSON10B (3.0 mm × 3.0 mm, 0.7 mm height, 0.5 mm pitch, exposed thermal pad). Compact footprint suitable for space-constrained portable and embedded power modules.

Pin/TerminalCircuit RoleDesign Meaning
dV/dTSlew rate control inputConnects external capacitor (1–100 nF) to set VOUT ramp time from 300 μs to 4.8 ms - prevents inrush-induced OCP false triggers
EN/UVLOEnable & UVLO threshold inputDual-function pin: enables output when >1.1 V (typ.), disables below 0.96 V (typ.); configurable UVLO trip via external resistor divider
VINMain power inputSupplies internal circuitry and powers internal MOSFET switch; accepts 4.4–18.0 V with transient tolerance
GNDPower and signal referenceCommon return path for all currents; requires low-impedance PCB plane for thermal and noise performance
ILIMCurrent limit set inputResistor to GND sets OCP threshold from 0.5 A to 5.15 A (e.g., 20 kΩ = 5.15 A typ. at VIN−VOUT = 1 V)
EFETExternal FET gate driverDrives N-ch MOSFET gate to block reverse current; outputs boosted voltage (VIN+4.9 V typ.) for full enhancement
VOUTProtected power outputDelivers regulated, clamped, and current-limited output; three pins (6,7,8) paralleled for low-inductance, high-current routing

Key Features

FeatureDesign Value
Reverse current blocking supportBuilt-in EFET driver enables external N-ch MOSFET to prevent backflow during VIN removal or shutdown - critical for bidirectional power domains
Programmable slew rate controlExternal CdV/dT capacitor adjusts VOUT rise time from 300 μs to 4.8 ms - eliminates inrush-induced false OCP trips and output overshoot
Latched fault responseOutput remains disabled after overcurrent, overvoltage, or thermal fault until EN/UVLO is cycled - ensures deterministic system-level fault containment
IEC62368-1 certifiedMeets end-equipment safety standard for audio/video, IT and communication technology equipment - reduces certification burden for final products
Adjustable UVLO thresholdExternal resistor divider on EN/UVLO pin sets custom under-voltage turn-on point above 4.15 V - enables staged power-up sequencing

Applications

Hard Disk Drive Power SupplyBattery Charging Circuit Protection

Use Scenario: Protecting 12 V motor and controller supply in enterprise HDD enclosures against short circuits, inrush, and input transients.

IC Role / Device Role / Timing Role: Primary power switch and fault manager; provides 150 ns fast-trip response and latched disable to prevent repeated stress during mechanical failure.

Use Value: Eliminates need for discrete fuses and relays while maintaining IEC62368-1 compliance and enabling automated fault logging via EN/UVLO status monitoring.

Use Scenario: Securing the output stage of a 12 V Li-ion battery charger where load disconnection must prevent reverse discharge into failed cells.

IC Role / Device Role / Timing Role: Bidirectional protection element; EFET-driven external MOSFET blocks reverse current when charger is powered down, while 15.1 V OVC clamps surge from hot-plug events.

Use Value: Enables safe hot-swap capability and extends battery pack life by eliminating parasitic drain paths during standby or fault conditions.

Industrial PLC I/O ModuleAutomotive Body Control Module (BCM)

Use Scenario: Distributing 12 V power to isolated digital I/O channels in programmable logic controllers subject to ESD and cable fault events.

IC Role / Device Role / Timing Role: Per-channel eFuse with independent RILIM tuning; latched mode prevents spurious resets during transient ESD-induced overcurrent.

Use Value: Provides channel-level diagnostics and isolation without software intervention - simplifies firmware and improves MTBF in harsh factory environments.

Use Scenario: Protecting 12 V accessory rails (e.g., lighting, window motors) in BCMs where load dumps and jump-start surges exceed 24 V.

IC Role / Device Role / Timing Role: Front-end protection IC; 18 V absolute max rating and 15.1 V OVC withstand 24 V load-dump spikes while limiting energy delivered to downstream loads.

Use Value: Replaces TVS-diode + fuse combinations with single-component solution that maintains functional safety integrity per ISO 26262 ASIL-B requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar eFuse protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TCKE812NA,RFAuto-retry fault response vs. latched; identical OVC (15.1 V), RON (28 mΩ), and VIN rangeSuitable for non-critical loads where automatic recovery is acceptable after transient fault clearsSelect TCKE812NA,RF only if system firmware can monitor retry cycles and log persistent faults
TPS259472LVRTI device with 18 V max, 5.5 A, 22 mΩ RON, but fixed 14.5 V OVC and no EFET driver for reverse blockingLacks integrated reverse-current blocking - requires external circuitry for backflow preventionChoose only if reverse blocking is unnecessary and tighter RON tolerance (±15%) is prioritized over EFET control

Compared with TCKE812NA,RF, the TCKE812NL,RF provides deterministic fault containment via latching, while versus TPS259472LVR it delivers unique EFET-driven reverse blocking - making it the sole option among these three for applications requiring both latch-mode safety and bidirectional current control.

Availability

TCKE812NL,RF is available at Aetrix Electronics and suitable for hard disk drive power supplies, battery charging circuits, industrial PLC I/O modules, and automotive body control modules requiring stable component supply, long-term lifecycle support, and IEC62368-1 certified protection.

Supply support for TCKE812NL,RF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for power management, motor control, and interface applications, with emphasis on industrial and computing markets.

The TCKE8xx series was developed specifically for robust, programmable eFuse protection in 12 V and 5 V power distribution networks - targeting applications where fuse replacement is impractical and system-level fault containment is mandatory.

FAQ

What is the overvoltage clamp voltage of the TCKE812NL,RF?

The TCKE812NL,RF features a fixed overvoltage clamp of 15.1 V (typical), with a guaranteed range of 14.11 V to 16.14 V across −40°C to +85°C ambient. This value applies specifically to the TCKE812 variant and is confirmed in Section 11.3 of the official Toshiba datasheet. The TCKE812NL,RF uses this clamp to protect downstream 12 V circuitry from input surges without requiring external components.

How does the latched fault response of the TCKE812NL,RF differ from auto-retry types?

The TCKE812NL,RF enters a latched-off state upon overcurrent, overvoltage, or thermal fault and remains disabled until the EN/UVLO pin is actively cycled from low to high. Unlike auto-retry variants (e.g., TCKE812NA,RF), it does not attempt autonomous recovery. This behavior ensures fault persistence is visible to system firmware and prevents uncontrolled re-energization in hazardous conditions - a key requirement in industrial and automotive safety-critical designs using the TCKE812NL,RF.

Can the TCKE812NL,RF be used without an external MOSFET for reverse current blocking?

Yes, the TCKE812NL,RF functions fully as a standalone eFuse without an external MOSFET. The EFET pin may be left floating if reverse current blocking is not required. When unused, the internal circuitry ignores the EFET driver output, and the device operates normally with forward-only current flow. Reverse blocking is an optional feature enabled only when an N-channel MOSFET is connected to the EFET pin - no penalty in cost, layout, or performance occurs when omitting it for unidirectional applications using the TCKE812NL,RF.

What is the recommended external capacitor value for dV/dT control on the TCKE812NL,RF?

Toshiba specifies CdV/dT values from 1 nF (typ.) to 100 nF (max) for the TCKE812NL,RF. A 1 nF capacitor yields ~4.8 ms typical VOUT ramp time at 12 V input, while open-circuit (no capacitor) gives ~500 μs. Designers select based on load capacitance and inrush sensitivity: 1–10 nF is typical for HDD or battery-charger outputs with ≥100 μF bulk capacitance. The exact value must be validated on the target PCB due to parasitic effects - the TCKE812NL,RF's dV/dT pin tolerates up to 6.0 V and draws only 250 nA.

Does the TCKE812NL,RF require a heatsink in 5 A continuous operation?

No external heatsink is required for the TCKE812NL,RF at 5 A DC in typical applications. With 28 mΩ (typ.) RON, conduction loss is ~700 mW, and the WSON10B package (θJA ≈ 52°C/W on 4-layer FR4) results in ~36°C junction rise above ambient. At 85°C max ambient, junction temperature stays well below the 160°C thermal shutdown threshold. However, board-level copper area under the exposed thermal pad must be ≥100 mm² and connected via ≥4 thermal vias to inner ground planes - this thermal design is mandatory to achieve rated performance with the TCKE812NL,RF.

TCKE812NL,RF Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
10-WFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Function:
Electronic Fuse
Sensing Method:
-
Accuracy:
-
Voltage - Input:
4.4V ~ 18V
Current - Output:
5A
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
10-WSONB (3x3)

TCKE812NL,RF FAQ

1.How can I place an order for TCKE812NL,RF through Aetrix?

Please submit a Request for Quotation (RFQ) for TCKE812NL,RF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TCKE812NL,RF reliable?

The price and inventory of TCKE812NL,RF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCKE812NL,RF is usually 5 days.

3.What payment methods are accepted for TCKE812NL,RF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCKE812NL,RF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TCKE812NL,RF?

TCKE812NL,RF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TCKE812NL,RF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TCKE812NL,RF?

For technical support, including TCKE812NL,RF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCKE812NL,RF requirements.

6.How does Aetrix verify that TCKE812NL,RF is sourced from the original manufacturer or authorized distributors?

All TCKE812NL,RF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCKE812NL,RF meets industry standards.

7.What is the process for return or replacement of TCKE812NL,RF?

All TCKE812NL,RF units undergo pre-shipment inspection (PSI). If there is an issue with TCKE812NL,RF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TCKE812NL,RF part is unused and in its original packaging.

Return procedure for TCKE812NL,RF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TCKE812NL,RF Tags

  • TCKE812NL,RF
  • TCKE812NL,RF PDF
  • TCKE812NL,RF Datasheet
  • TCKE812NL,RF Specifications
  • TCKE812NL,RF Images
  • Toshiba Semiconductor and Storage
  • Toshiba Semiconductor and Storage TCKE812NL,RF
  • Buy TCKE812NL,RF
  • TCKE812NL,RF Price
  • TCKE812NL,RF Distributor
  • TCKE812NL,RF Supplier
  • TCKE812NL,RF Wholesale
Related Products
PSSI2021SAY,115
PSSI2021SAY,115

Nexperia USA Inc.

BCR401RE6327HTSA1
BCR401RE6327HTSA1

Infineon Technologies

INA199B2DCKR
INA199B2DCKR

Texas Instruments

INA199A1DCKR
INA199A1DCKR

Texas Instruments

INA199B1DCKR
INA199B1DCKR

Texas Instruments

NSI45015WT1G
NSI45015WT1G

onsemi

NSI45020T1G
NSI45020T1G

onsemi

NSI45030AT1G
NSI45030AT1G

onsemi

NSI45025AT1G
NSI45025AT1G

onsemi

NSI45020AT1G
NSI45020AT1G

onsemi

NSI50010YT1G
NSI50010YT1G

onsemi

LM334Z/NOPB
LM334Z/NOPB

Texas Instruments

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER