Toshiba Semiconductor and Storage TCKE912NA,RF

Overview

TCKE912NA,RF from Toshiba Electronic Devices & Storage Corporation is a 23 V input, 4 A eFuse IC with adjustable overcurrent protection, fixed 13.7 V overvoltage clamp, auto-retry fault response, and WSON8 package. It functions as a reusable power switch in high-density USB VBUS, storage supply, and battery charging circuits with 34 mΩ typical R_ON, thermal shutdown, and slew-rate control via external capacitor.

For engineers reviewing the TCKE912NA,RF datasheet, TCKE912NA,RF pinout, TCKE912NA,RF application, or TCKE912NA,RF equivalent, this page delivers verified specifications, validated WSON8 pin mapping, confirmed 13.7 V OVC clamping behavior, auto-retry thermal/overcurrent recovery timing, and real-world design implications of ILIM resistor tuning and dV/dT capacitor selection.

Technical Context

The TCKE912NA,RF integrates a low-R_ON N-channel MOSFET power switch with precision current-sense amplifier, fast 6 μs overvoltage clamp comparator, and hysteresis-based thermal shutdown at 155 °C. Its EN/UVLO pin serves dual roles: enable control and externally adjustable under-voltage lockout threshold using resistor dividers.

Protection logic implements three independent, simultaneous fault responses: auto-retry overcurrent limiting (ILIM set by 487–5000 Ω), fixed VOVC = 13.7 V (±0.5 V) clamping, and thermal shutdown with 20 °C hysteresis. Slew rate is programmable via dV/dT pin capacitance (≥3300 pF), directly controlling inrush current during VOUT ramp-up.

Key Specifications

Pinout & Package

Package: WSON8 (2.0 mm × 2.0 mm × 0.8 mm max), 0.5 mm pitch, exposed thermal pad requiring GND connection for stability and heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar eFuse applications.

Compared with TCKE912NA,RF, the TPS25942LARVRR offers lower conduction loss but adds design complexity for UVLO tuning, while the RTQ2132BGQW provides identical voltage ratings and R_ON but removes auto-retry flexibility-making TCKE912NA,RF optimal for compact, self-healing 12 V power domains.

Availability

TCKE912NA,RF is available at Aetrix Electronics and suitable for USB VBUS protection, storage power supply, and battery charging applications requiring stable component supply, long-term lifecycle support, and certified safety compliance.

Supply support for TCKE912NA,RF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability analog and power semiconductors for industrial, automotive, and computing markets, with emphasis on functional safety and miniaturization.

The TCKE9 Series targets high-density power distribution in portable and embedded systems, delivering integrated eFuse functionality-including adjustable current limiting, fixed overvoltage clamping, and thermal protection-in ultra-small WSON8 packages.

FAQ

What is the overvoltage clamp voltage of the TCKE912NA,RF?

The TCKE912NA,RF features a fixed overvoltage clamp (OVC) threshold of 13.7 V (typical), with a guaranteed range of 13.2 V to 14.3 V across temperature. This value is specific to the TCKE912 variant and is not adjustable. During an overvoltage event, the TCKE912NA,RF clamps VOUT at this level to protect downstream 12 V loads, and the OVC responds within 6.0 μs at 4 A load current. The TCKE912NA,RF does not require external components to set VOVC.

How do I set the overcurrent limit for the TCKE912NA,RF?

The overcurrent limit for the TCKE912NA,RF is set by connecting an external resistor (R_ILIM) between the ILIM pin and GND. The TCKE912NA,RF supports R_ILIM values from 487 Ω to 5000 Ω, corresponding to current limits from 4.0 A down to 0.5 A. For example, 487 Ω yields ~4.09 A (typical), while 4420 Ω yields ~0.49 A (typical). The relationship is nonlinear and documented in the TCKE912NA,RF datasheet Figure 9.6.3; actual values should be verified with bench testing due to ±15% tolerance.

Does the TCKE912NA,RF include thermal shutdown protection?

Yes, the TCKE912NA,RF includes thermal shutdown protection that activates at a junction temperature of 155 °C (typical) with 20 °C hysteresis. When triggered, the device shuts down the internal MOSFET and pulls the FLAG pin low. As an auto-retry type device, the TCKE912NA,RF automatically attempts recovery after a 55 ms internal timer expires-provided the fault condition has cleared and junction temperature has dropped below 135 °C. This behavior is confirmed in the TCKE912NA,RF datasheet Section 9.9.1.

What package type and pin count does the TCKE912NA,RF use?

The TCKE912NA,RF uses the WSON8 package: an 8-pin, 2.0 mm × 2.0 mm × 0.8 mm maximum body size with 0.5 mm pitch and an exposed thermal pad. Pin 1 is dV/dT, Pin 2 is EN/UVLO, Pins 3 and 8 are VIN (dual input connections), Pin 4 is GND, Pin 5 is ILIM, Pin 6 is FLAG, and Pin 7 is VOUT. The exposed pad must be soldered to a PCB GND plane for thermal performance and electrical stability, as specified in the TCKE912NA,RF datasheet Section 6 and Package Outline Drawing.

Is the TCKE912NA,RF compatible with 12 V battery charging applications?

Yes, the TCKE912NA,RF is explicitly suited for 12 V battery charging input stages. Its 2.7–23.0 V operating input range accommodates 12 V nominal sources with margin for ripple and transients; its 13.7 V overvoltage clamp protects sensitive charger ICs; and its 4.0 A continuous rating covers typical single-cell to multi-cell charging currents. The auto-retry fault response ensures uninterrupted operation during transient overloads, and the WSON8 package enables compact placement near charging connectors-validated in Toshiba's Application Note Section 10.1.