Toshiba Semiconductor and Storage TCR2DG31,LF

Overview

TCR2DG31,LF from Toshiba Electronic Devices & Storage Corporation is a fixed-output, 3.1 V, 200 mA ultra-low-dropout linear voltage regulator in WCSP4 package with 180 mV typical dropout at full load, 75 dB PSRR at 1 kHz, and 30 µA quiescent current - deployed for power stabilization in camera modules and Bluetooth subsystems.

For engineers reviewing the TCR2DG31,LF datasheet, TCR2DG31,LF pinout, TCR2DG31,LF application, or TCR2DG31,LF equivalent, key selection criteria include guaranteed 3.1 V output accuracy (±1.5%), fast load transient response (<10 µs), thermal shutdown protection, auto-discharge functionality, and WCSP4 footprint compatibility with space-constrained IoT sensor nodes.

Technical Context

The TCR2DG31,LF implements a CMOS-based LDO architecture with internal P-channel MOSFET pass device, enabling ultra-low dropout operation down to 180 mV at 200 mA and maintaining regulation with input as low as 3.28 V. It integrates active over-current protection and thermal shutdown with automatic recovery.

Its high PSRR (75 dB @ 1 kHz, 45 dB @ 1 MHz) and low noise floor (25 µV_RMS) stem from proprietary error amplifier design and on-chip bypass capacitor optimization - critical for analog-sensitive loads like image sensors and RF front-ends.

Key Specifications

Pinout & Package

TCR2DG31,LF is housed in a 0.8 mm × 0.8 mm, 0.4 mm height, 4-bump WCSP4 (Wafer Chip Scale Package) with bottom-side solder terminals. The package supports reflow-compatible assembly and delivers superior thermal resistance (θ_JA = 220 °C/W) in ultra-thin applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with AP2112K-3.1TRG1 and MCP1700T-3102E/TT, the TCR2DG31,LF uniquely combines WCSP4 miniaturization, 180 mV dropout, integrated auto-discharge, and 75 dB PSRR - making it optimal for space- and noise-constrained RF and imaging subsystems where both size and signal integrity are non-negotiable.

Availability

TCR2DG31,LF is available at Aetrix Electronics and suitable for camera modules, Bluetooth LE peripherals, and IoT sensor nodes requiring stable component supply, consistent wafer-lot traceability, and long-term lifecycle support through 2030.

Supply support for TCR2DG31,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for automotive, industrial, and consumer electronics, with emphasis on power efficiency, miniaturization, and functional safety compliance.

The TCR2DG series targets ultra-compact, high-PSRR LDO applications in battery-powered edge devices - engineered specifically for noise-sensitive analog and RF subsystems where traditional SOT packages cannot meet height or EMI constraints.

FAQ

What is the maximum input voltage rating for TCR2DG31,LF?

The TCR2DG31,LF supports an absolute maximum input voltage of 6.0 V per Toshiba's official datasheet. Operation above 5.5 V is not recommended for continuous use, as it exceeds the specified operating range and may accelerate parametric drift or reduce long-term reliability. For designs using 5 V USB or 5.2 V boost outputs, the TCR2DG31,LF remains fully within safe operating limits while delivering its rated 3.1 V output.

Does TCR2DG31,LF require an external output capacitor for stability?

Yes, the TCR2DG31,LF requires a minimum 1.0 µF ceramic output capacitor with X5R or X7R dielectric placed within 2 mm of the VOUT bump. Toshiba specifies this value for phase margin >60° and transient stability; omitting or undersizing the capacitor risks oscillation under dynamic load conditions. The capacitor must be rated for ≥6.3 V and exhibit ESR <100 mΩ.

How does the auto-discharge function operate in TCR2DG31,LF?

When the CE pin is pulled LOW (≤0.4 V), the TCR2DG31,LF activates an internal 200 Ω discharge path between VOUT and GND, discharging the output capacitor to <0.1 V within 100 µs. This prevents back-powering of upstream circuitry and ensures deterministic power-down sequencing - a requirement in systems with multiple regulated domains sharing common ground or I²C buses.

Is TCR2DG31,LF compatible with lead-free reflow profiles?

Yes, the TCR2DG31,LF WCSP4 package is qualified for standard lead-free reflow per JEDEC J-STD-020 Rev. E, supporting peak temperatures up to 260 °C for ≤30 seconds. Its bump metallurgy (SnAg) and mold compound are fully compliant with RoHS and REACH requirements, and the device passes MSL Level 1 moisture sensitivity classification without dry-packaging.

What is the load regulation specification for TCR2DG31,LF?

The TCR2DG31,LF exhibits ±0.5% load regulation over its full 0–200 mA output range at 25 °C, meaning output voltage deviation remains within ±15.5 mV of 3.1 V. This tight regulation ensures consistent performance across varying sensor or RF transmit states without requiring additional post-regulation filtering or calibration compensation in the host system firmware.