Toshiba Semiconductor and Storage TCR2EE10,LM(CT

Overview

TCR2EE10,LM(CT) from Toshiba Electronic Devices & Storage Corporation is a 1.0 V fixed-output, 200 mA CMOS low dropout regulator with on/off control input, 180 mV dropout (at 2.5 V output, 150 mA), 35 μVrms output noise, ±60 mV load transient response, and Auto-discharge function-designed for analog/RF power rails in portable instrumentation and wireless sensor nodes.

For engineers reviewing the TCR2EE10,LM(CT) datasheet, TCR2EE10,LM(CT) pinout, TCR2EE10,LM(CT) application, or TCR2EE10,LM(CT) equivalent, key selection criteria include guaranteed ±1.0% output accuracy (≥1.8 V), 35 μVrms noise performance at 2.5 V, fast 1 mA ↔ 150 mA load step recovery, ceramic capacitor compatibility (CIN = 0.1 μF, COUT = 1.0 μF), and SOT-553 (ESV) package suitability for space-constrained PCB layouts.

Technical Context

The TCR2EE10,LM(CT) implements a CMOS-based LDO architecture with integrated P-channel pass transistor, enabling ultra-low quiescent current (35 μA typ.) and high ripple rejection (73 dB at 1 kHz). Its control logic accepts 0–0.4 V for OFF and 1.0–5.5 V for ON states, supporting direct microcontroller GPIO interfacing without level-shifting.

Designed for stable operation with minimal external components, it requires only 0.1 μF input and 1.0 μF output ceramic capacitors-leveraging internal compensation to eliminate ESR dependency. The Auto-discharge function actively pulls down VOUT when CONTROL = LOW, ensuring rapid output discharge during shutdown sequences.

Key Specifications

Pinout & Package

TCR2EE10,LM(CT) uses the ESV (SOT-553) package: 1.6 mm × 1.6 mm × 0.55 mm, 5-pin surface-mount, weight 3.0 mg (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise, 1.0 V LDO applications.

Compared with TCS2EF10,LM(CT), TCR2EE10,LM(CT) delivers 3× smaller footprint and lower thermal resistance; versus MCP1700T-1002E/TT, it trades 30 μA higher IQ for 210 mV lower dropout and integrated Auto-discharge-critical for precise power sequencing in compact RF modules.

Availability

TCR2EE10,LM(CT) is available at Aetrix Electronics and suitable for portable medical sensors, wireless IoT endpoints, RF transceiver bias rails, and industrial process monitoring requiring stable component supply across extended production lifecycles.

Supply support for TCR2EE10,LM(CT) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for automotive, industrial, and consumer applications, with expertise in power management, logic, and analog ICs.

The TCR2EE series targets space-constrained, low-noise power delivery in battery-operated and RF-sensitive systems-emphasizing fast transient response, ceramic capacitor compatibility, and integrated control features like Auto-discharge.

FAQ

What is the guaranteed output voltage accuracy for TCR2EE10,LM(CT) at 1.0 V?

The TCR2EE10,LM(CT) specifies output voltage accuracy as ±18 mV (−18 mV to +18 mV) for 1.0 V output, per Electrical Characteristics table Note 6. This tolerance applies under standard test conditions (VIN = VOUT + 1 V, IOUT = 50 mA, Tj = 25°C) and is distinct from the ±1.0% spec reserved for outputs ≥1.8 V. The TCR2EE10,LM(CT) maintains this accuracy across −40°C to +85°C operating temperature range.

Can TCR2EE10,LM(CT) operate with an input voltage below 1.5 V?

No-TCR2EE10,LM(CT) has a minimum input voltage rating of 1.5 V per its Operating Ranges specification. Attempting to operate below this violates absolute maximum ratings and may cause regulation failure or excessive dropout. For 1.0 V output, the lowest viable input is 1.51 V (accounting for 510 mV typical dropout), making TCR2EE10,LM(CT) incompatible with sub-1.5 V sources such as partially discharged coin cells.

Does TCR2EE10,LM(CT) require an external resistor on the CONTROL pin?

No-TCR2EE10,LM(CT) includes internal pull-down between CONTROL and GND, eliminating need for external biasing. The CONTROL pin accepts direct connection to microcontroller GPIO: logic HIGH (≥1.0 V) enables regulation; logic LOW (≤0.4 V) disables output and activates Auto-discharge. Leaving CONTROL open defaults to OFF state due to internal pull-down, ensuring fail-safe behavior.

What is the maximum allowable power dissipation for TCR2EE10,LM(CT) in ESV package?

In ESV (SOT-553) package, TCR2EE10,LM(CT) has a unit power dissipation rating of 150 mW and a board-mounted rating of 320 mW (on 30 mm × 30 mm × 0.8 mm FR4 board with 20 mm² copper area). Exceeding these limits risks junction temperature exceeding 150°C. At 150 mA load and 510 mV dropout, power dissipation is 76.5 mW-well within both ratings, assuming adequate PCB copper pour.

Is TCR2EE10,LM(CT) compatible with 10 μF tantalum output capacitors?

TCR2EE10,LM(CT) is characterized and guaranteed stable with ≥1.0 μF ceramic capacitors (ESR < 10 Ω recommended). While tantalum capacitors may function in some layouts, Toshiba explicitly recommends ceramic types due to ESR sensitivity and phase-margin risks. Using 10 μF tantalum introduces unpredictable stability margins and is not validated-designers should adhere to the specified 1.0 μF ceramic requirement for TCR2EE10,LM(CT) reliability.