Toshiba Semiconductor and Storage TCR2EN12,LF

Overview

TCR2EN12,LF from Toshiba Electronic Devices & Storage Corporation is a 1.2 V fixed-output CMOS low dropout regulator delivering up to 200 mA, featuring 360 mV typical dropout at 150 mA load, ±1.0% output accuracy (for VOUT ≥ 1.8 V; 1.2 V variant specified as ±18 mV), and 23 µVrms output noise. It integrates on/off control, auto-discharge, overcurrent protection, and operates in ultra-small SDFN4/SDFN4E package for space-constrained portable power rails.

For engineers reviewing the TCR2EN12,LF datasheet, TCR2EN12,LF pinout, TCR2EN12,LF application, or TCR2EN12,LF equivalent, key selection criteria include dropout performance at 1.2 V output, quiescent current under zero-load (35 µA typ.), fast load transient response (±55 mV), compatibility with 0.1 µF input / 1.0 µF ceramic output capacitors, and thermal derating on FR4 boards.

Technical Context

The TCR2EN12,LF employs a CMOS-based LDO architecture with internal P-channel pass transistor, enabling low dropout and minimal quiescent current. Its control input accepts TTL-compatible logic levels (ON: 1.0–5.5 V; OFF: 0–0.4 V) and enables fast turn-on/turn-off with auto-discharge functionality via internal pull-down between CONTROL and GND.

Designed for high-density portable systems, it achieves stable regulation using only small ceramic capacitors (CIN = 0.1 µF, COUT = 1.0 µF) and delivers 73 dB ripple rejection at 1 kHz. The device maintains ±18 mV output voltage accuracy across 1 mA–150 mA load and −40°C to +85°C ambient temperature, with 75 ppm/°C temperature coefficient.

Key Specifications

Pinout & Package

TCR2EN12,LF is housed in the ultra-compact SDFN4/SDFN4E package (0.8 mm × 0.8 mm × 0.38 mm, 0.6 mg weight), optimized for high-density PCB layouts in mobile and wearable devices.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-dropout regulator applications.

Compared with AP2112K-1.2TRG1 and MCP1700T-1202E/TT, the TCR2EN12,LF offers superior noise performance (23 µVrms vs. ≥40 µVrms), smaller footprint (0.64 mm² vs. ≥4.6 mm²), and integrated auto-discharge - critical for modern portable systems requiring precise power sequencing and minimal standby leakage.

Availability

TCR2EN12,LF is available at Aetrix Electronics and suitable for smartphone baseband power, wearable sensor hubs, Bluetooth audio SoC core rails, and IoT edge node microcontroller applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TCR2EN12,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on energy efficiency and miniaturization.

The TCR2EN series targets ultra-compact, low-noise power management in portable electronics - specifically engineered to replace larger LDOs in space- and battery-life-constrained applications like smartphones, wearables, and wireless earbuds.

FAQ

What is the guaranteed output voltage accuracy for TCR2EN12,LF at room temperature and nominal load?

The TCR2EN12,LF guarantees output voltage accuracy of ±18 mV (±1.5%) at IOUT = 50 mA and Tj = 25°C, per its Electrical Characteristics table. This specification applies specifically to the 1.2 V output variant, distinct from the ±1.0% tolerance offered for versions ≥1.8 V.

Does TCR2EN12,LF require an external pull-up or pull-down resistor on the CONTROL pin?

No - the TCR2EN12,LF integrates an internal pull-down resistor between the CONTROL pin and GND. This ensures the device remains disabled (output off and auto-discharged) when the CONTROL signal is left unconnected or floating, eliminating the need for external biasing components.

Can TCR2EN12,LF operate with input voltages below 2.0 V?

Yes - the TCR2EN12,LF supports input voltages as low as 1.5 V (minimum specified VIN), enabling operation from partially discharged single-cell lithium batteries. At VIN = 1.56 V and IOUT = 150 mA, the 360 mV typical dropout ensures regulation is maintained at its 1.2 V output.

What is the maximum allowable power dissipation for TCR2EN12,LF on a standard FR4 PCB?

The TCR2EN12,LF has a rated power dissipation of 300 mW when mounted on a 40 mm × 40 mm × 1.6 mm FR4 board with 50% copper coverage on both sides. Derating is required above +25°C ambient; at +85°C, maximum dissipation drops to approximately 120 mW per the thermal curve in the datasheet.

Is the SDFN4/SDFN4E package of TCR2EN12,LF compatible with standard reflow soldering processes?

Yes - the SDFN4/SDFN4E package is qualified for lead-free reflow soldering per JEDEC J-STD-020. Its 0.38 mm height and exposed thermal pad (center electrode, required to connect to GND) support reliable thermal transfer and mechanical attachment under standard profile conditions including peak temperatures up to 260°C.