Toshiba Semiconductor and Storage TCR2EN21,LF(SE

Overview

TCR2EN21,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 2.1 V fixed-output, 200 mA CMOS low-dropout (LDO) regulator in an ultra-small SDFN4/SDFN4E package (0.8 mm × 0.8 mm × 0.38 mm), featuring 160 mV dropout at 150 mA, ±1.0% output accuracy (VOUT ≥ 1.8 V), and 35 µVrms output noise. It integrates on/off control, auto-discharge, overcurrent protection, and supports ceramic input/output capacitors (0.1 µF/1.0 µF) for space-constrained portable power rails.

For engineers reviewing the TCR2EN21,LF(SE) datasheet, TCR2EN21,LF(SE) pinout, TCR2EN21,LF(SE) application, or TCR2EN21,LF(SE) equivalent, key selection criteria include dropout performance at 2.1 V output, quiescent current (35 µA typ.), load transient response (±55 mV), ripple rejection (73 dB at 1 kHz), and compatibility with high-density PCB layouts requiring minimal decoupling capacitance.

Technical Context

The TCR2EN21,LF(SE) employs a CMOS-based LDO architecture with integrated P-channel pass transistor, enabling low dropout and fast load transient recovery without external compensation. Its on/off control input accepts 0–0.4 V (OFF) and 1.0–5.5 V (ON) logic levels, and internal auto-discharge circuitry actively pulls down VOUT when disabled.

Designed for stable operation with ceramic capacitors, it achieves 73 dB ripple rejection at 1 kHz and maintains ±1.0% output voltage accuracy across –40°C to +85°C ambient temperature, with temperature coefficient of 75 ppm/°C. The device operates from 1.5 V to 5.5 V input and delivers up to 200 mA while limiting junction temperature to 150°C.

Key Specifications

Pinout & Package

TCR2EN21,LF(SE) uses the ultra-compact SDFN4/SDFN4E package (0.8 mm × 0.8 mm × 0.38 mm, 0.6 mg weight), with exposed thermal pad (center electrode) recommended to be connected to GND for optimal thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TCR2EN21,LF(SE), the XC6210B212MR-G trades ultra-small size and lower noise for higher quiescent current and reduced ripple rejection, while the BD3921FP-ME2 offers higher current but sacrifices dropout performance, auto-discharge, and board-area efficiency - making TCR2EN21,LF(SE) optimal for miniaturized, battery-sensitive, noise-critical portable designs.

Availability

TCR2EN21,LF(SE) is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor hubs, Bluetooth LE modules, and IoT edge node designs requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for TCR2EN21,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor components, with expertise in power management, logic, memory, and discrete devices for consumer, industrial, and automotive markets.

The TCR2EN series belongs to Toshiba's CMOS Linear Integrated Circuit line, engineered specifically for ultra-compact, low-noise, low-quiescent LDO regulation in space- and power-constrained portable electronics.

FAQ

What is the guaranteed output voltage tolerance for TCR2EN21,LF(SE) across temperature and load?

The TCR2EN21,LF(SE) guarantees ±1.0% output voltage accuracy for 2.1 V output under conditions where 1.8 V ≤ VOUT, measured at IOUT = 50 mA and Tj = 25°C. Over the full operating range (–40°C to +85°C ambient, 1 mA to 150 mA load), total error remains within ±2.5% including line/load regulation, temperature coefficient (75 ppm/°C), and initial tolerance - verified per Toshiba's Electrical Characteristics table.

Does TCR2EN21,LF(SE) require an external pull-down resistor on the CONTROL pin?

No, TCR2EN21,LF(SE) includes an internal pull-down connection between CONTROL and GND, as specified in the datasheet. An external resistor is unnecessary for default OFF-state behavior; the pin responds to logic-level signals (≤0.4 V for OFF, ≥1.0 V for ON) without additional biasing.

Can TCR2EN21,LF(SE) operate with input voltage below 2.1 V?

No - TCR2EN21,LF(SE) requires VIN ≥ (VOUT + VDO) to maintain regulation. With 2.1 V output and typical dropout of 160 mV at 150 mA, minimum functional input is ~2.26 V. Below this, the device enters dropout and VOUT tracks VIN minus pass transistor saturation voltage, losing regulation.

What is the maximum permissible power dissipation for TCR2EN21,LF(SE) on a standard FR4 PCB?

TCR2EN21,LF(SE) has a rated power dissipation of 300 mW when mounted on a 40 mm × 40 mm × 1.6 mm FR4 board with 50% copper coverage on both sides and 24 thermal vias (0.5 mm diameter). Derating is required above +25°C ambient; at +85°C, maximum dissipation drops to ~120 mW to maintain Tj ≤ 150°C.

Is the center thermal pad of the SDFN4/SDFN4E package electrically isolated?

No - the center electrode (thermal pad) of the TCR2EN21,LF(SE) SDFN4/SDFN4E package is internally connected to GND, as confirmed by Toshiba's package drawings and pin assignment diagram. It must be soldered to a GND plane for both thermal performance and electrical integrity; leaving it floating or connecting to another net violates design specifications.