Toshiba Semiconductor and Storage TCR2EN285,LF(SE

Overview

TCR2EN285,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 2.85 V fixed-output CMOS low-dropout linear regulator in an ultra-small SDFN4/SDFN4E package (0.8 mm × 0.8 mm × 0.38 mm), delivering up to 200 mA with 160 mV typical dropout at 150 mA, 35 µV_rms output noise, and ±55 mV load transient response - designed for space-constrained portable power rails in cellular phones and wearables.

For engineers reviewing the TCR2EN285,LF(SE) datasheet, TCR2EN285,LF(SE) pinout, TCR2EN285,LF(SE) application, or TCR2EN285,LF(SE) equivalent, key selection criteria include its 2.85 V output accuracy (±1.0%), on/off control interface, Auto-discharge function, ceramic capacitor compatibility (C_IN = 0.1 µF, C_OUT = 1.0 µF), and thermal performance under 85°C ambient operation.

Technical Context

The TCR2EN285,LF(SE) implements a CMOS-based LDO architecture with integrated overcurrent protection and an active pull-down circuit on the CONTROL pin. Its regulation loop maintains stable 2.85 V output across 1 mA–150 mA load steps while rejecting 73 dB of 1 kHz ripple - enabled by internal compensation optimized for 1.0 µF ceramic output capacitance.

It operates from 1.5 V to 5.5 V input, supports ON/OFF control via 1.0–5.5 V logic-high and 0–0.4 V logic-low thresholds, and features Auto-discharge that actively discharges the output when disabled - critical for fast system power sequencing in battery-powered devices.

Key Specifications

Pinout & Package

TCR2EN285,LF(SE) uses the ultra-compact SDFN4/SDFN4E package (0.8 mm × 0.8 mm × 0.38 mm, 0.6 mg weight) with wettable flank terminals for automated optical inspection. The exposed center pad is designated GND or left open per layout requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TCR2EN285,LF(SE), the XC6219B285MR-G trades ultra-compact size and Auto-discharge for lower unit cost, while the BD3572EFJ-ME2 offers greater current headroom at the expense of footprint and functional completeness - making TCR2EN285,LF(SE) optimal for miniaturized, fast-sequencing portable designs.

Availability

TCR2EN285,LF(SE) is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor hubs, IoT edge node MCUs, portable medical monitors, and industrial handheld terminals requiring stable component supply and long-term lifecycle support.

Supply support for TCR2EN285,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor solutions, with expertise in power management, logic, memory, and discrete devices for consumer, industrial, and automotive markets.

The TCR2EN series targets space-constrained portable electronics, delivering ultra-low-noise, low-quiescent-current LDO regulation in sub-1 mm² packages - specifically engineered for battery-powered devices demanding precision, efficiency, and rapid power-state transitions.

FAQ

What is the guaranteed output voltage accuracy of TCR2EN285,LF(SE) over temperature?

The TCR2EN285,LF(SE) guarantees ±1.0% output voltage accuracy for V_OUT ≥ 1.8 V across the full operating temperature range of −40°C to +85°C. This specification applies directly to the 2.85 V output variant and ensures stable biasing for logic and analog circuits without external trimming or calibration in consumer-grade applications.

Does TCR2EN285,LF(SE) require an external discharge resistor for safe power-down?

No, TCR2EN285,LF(SE) integrates an Auto-discharge function that actively pulls the VOUT pin to GND when the CONTROL pin is driven low (≤0.4 V). This eliminates the need for an external discharge resistor, simplifies BOM, and ensures rapid, controlled discharge of downstream capacitance during system sleep or shutdown sequences.

What ceramic capacitor values are validated for stable operation with TCR2EN285,LF(SE)?

Toshiba validates stable operation of TCR2EN285,LF(SE) with a 0.1 µF ceramic capacitor on VIN and a 1.0 µF ceramic capacitor on VOUT. These values are specified in the Electrical Characteristics table and confirmed in Application Note section 1; ESR should be kept below 10 Ω to ensure phase margin and transient stability.

Can TCR2EN285,LF(SE) operate with an input voltage as low as 2.0 V?

Yes, TCR2EN285,LF(SE) can operate with an input voltage as low as 1.5 V, but regulation is only guaranteed when VIN ≥ V_OUT + V_DO. At 150 mA load, V_DO is 160 mV typ., so minimum functional VIN is ~3.01 V. Below that, output drops linearly - e.g., at VIN = 2.0 V, VOUT ≈ 1.84 V (not regulated).

Is the center thermal pad on the SDFN4/SDFN4E package of TCR2EN285,LF(SE) required to be connected to GND?

No, the center electrode on the SDFN4/SDFN4E package of TCR2EN285,LF(SE) may be connected to GND or left unconnected (open), as stated in the Pin Assignment diagram. When connected, it improves thermal dissipation; when open, it simplifies layout - both configurations are qualified per Toshiba's reliability testing and do not affect electrical performance.