Toshiba Semiconductor and Storage TCR2EN28,LF

Overview

TCR2EN28,LF from Toshiba Electronic Devices & Storage Corporation is a 2.8 V fixed-output CMOS low-dropout linear regulator in an ultra-small SDFN4/SDFN4E package (0.8 mm × 0.8 mm × 0.38 mm), delivering up to 200 mA with 160 mV typical dropout at 150 mA load, 35 µV_rms output noise, and ±55 mV load transient response - ideal for space-constrained portable power rails in cellular phones and wearables.

For engineers reviewing the TCR2EN28,LF datasheet, TCR2EN28,LF pinout, TCR2EN28,LF application, or TCR2EN28,LF equivalent, key selection criteria include its ±1.0% output accuracy (for V_OUT ≥ 1.8 V), 35 µA typical quiescent current, on/off control input with 0.4 V max OFF threshold, Auto-discharge function, and compatibility with 0.1 µF input / 1.0 µF ceramic output capacitors.

Technical Context

The TCR2EN28,LF implements a CMOS-based LDO architecture with internal P-channel pass transistor, enabling low dropout and fast transient recovery without requiring external compensation. Its control input accepts TTL/CMOS-compatible logic levels (ON: ≥1.0 V, OFF: ≤0.4 V) and integrates a pull-down resistor to GND.

It features overcurrent protection with foldback behavior and an Auto-discharge circuit that actively discharges the output capacitor when disabled - critical for system-level power sequencing and leakage control in battery-powered devices. Thermal shutdown is not specified in the provided documentation.

Key Specifications

Pinout & Package

TCR2EN28,LF is housed in the ultra-compact SDFN4/SDFN4E package (0.8 mm × 0.8 mm × 0.38 mm, 0.6 mg weight), featuring a bottom-exposed thermal pad (center electrode) recommended to be connected to GND for optimal thermal performance and EMI suppression.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise, ultra-small LDO applications.

Compared with AP2112K-2.8TRG1 and MCP1700T-2802E/MB, the TCR2EN28,LF delivers superior board-area efficiency (0.64 mm² vs. ≥4.6 mm²), lower noise (35 µV_rms vs. ≥65 µV_rms), and unique Auto-discharge functionality - making it optimal for next-generation compact, battery-critical systems.

Availability

TCR2EN28,LF is available at Aetrix Electronics and suitable for smartphone baseband power, wearable sensor hubs, IoT edge node MCUs, portable medical monitors, and other applications requiring stable component supply with ultra-small footprint and low-noise regulation.

Supply support for TCR2EN28,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on power efficiency and miniaturization.

The TCR2EN series targets portable electronics requiring ultra-compact, low-quiescent-current LDOs with fast transient response and integrated enable/discharge control - specifically engineered for space- and battery-constrained mobile platforms.

FAQ

What is the maximum input voltage rating for TCR2EN28,LF?

The TCR2EN28,LF has an absolute maximum input voltage (VIN) rating of 6.0 V. However, the recommended operating input voltage range is 1.5 V to 5.5 V per electrical characteristics testing conditions. Exceeding 5.5 V may degrade long-term reliability even if within absolute maximum ratings, and thermal design must account for power dissipation at higher VIN–VOUT differentials.

Does TCR2EN28,LF require external components for stable operation?

Yes - the TCR2EN28,LF requires a minimum 0.1 µF ceramic capacitor at VIN and a 1.0 µF ceramic capacitor at VOUT for guaranteed stability and specified transient performance. The device is optimized for ceramic capacitors with ESR < 10 Ω; tantalum or aluminum electrolytic capacitors are not recommended due to higher ESR and potential instability.

What is the purpose of the Auto-discharge function in TCR2EN28,LF?

The Auto-discharge function in TCR2EN28,LF actively pulls down the VOUT pin through an internal transistor when the CONTROL pin is driven LOW, rapidly discharging the output capacitor. This prevents residual voltage from holding downstream circuitry in an undefined state during power-down sequences - essential for deterministic reset behavior in portable and medical devices.

How accurate is the output voltage of TCR2EN28,LF across temperature and load?

The TCR2EN28,LF guarantees ±1.0% output voltage accuracy for VOUT ≥ 1.8 V at 50 mA load and 25°C. Over –40°C to +85°C ambient and 1–150 mA load range, total error including line/load/temperature effects remains within ±2.5% (based on typical TCVO of 75 ppm/°C and load regulation of 30 mV max). Accuracy degrades outside this range per datasheet specifications.

Is the center thermal pad on the SDFN4/SDFN4E package of TCR2EN28,LF required to be connected?

Yes - the center electrode (thermal pad) of the TCR2EN28,LF's SDFN4/SDFN4E package must be connected to the GND plane using multiple thermal vias. This connection is critical for achieving the rated 300 mW power dissipation and maintaining junction temperature below 150°C. Leaving it unconnected or floating significantly reduces thermal performance and risks premature thermal shutdown or parametric drift.