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Toshiba Semiconductor and Storage TCR2EN34,LF(SE
- Part No.:
- TCR2EN34,LF(SE
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package:
- 4-XFDFN Exposed Pad
- Datasheet:
-
TCR2EN34,LF(SE.pdf
- Description:
- LDO REG VOUT=3.4V IOUT=200MA
- Quantity:
- Payment:
- Shipping:
Inventory:9,401
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Product details
Overview
TCR2EN34,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 3.4 V fixed-output CMOS low dropout (LDO) voltage regulator in an ultra-small SDFN4/SDFN4E package (0.8 mm × 0.8 mm × 0.38 mm), delivering up to 200 mA with 130 mV typical dropout at 3.0–3.6 V output, ±1.0% output accuracy (≥1.8 V), and 35 µVrms output noise - designed for power management in space-constrained portable electronics such as cellular phone baseband ICs and RF modules.
For engineers reviewing the TCR2EN34,LF(SE) datasheet, TCR2EN34,LF(SE) pinout, TCR2EN34,LF(SE) application, or TCR2EN34,LF(SE) equivalent, key selection criteria include its 130 mV dropout at 3.4 V/150 mA, Auto-discharge function, on/off control interface, 35 µVrms noise performance, and compatibility with 0.1 µF input / 1.0 µF ceramic output capacitors in high-density PCB layouts.
Technical Context
The TCR2EN34,LF(SE) implements a CMOS-based LDO architecture with integrated overcurrent protection and an active Auto-discharge circuit that rapidly discharges the output capacitor when disabled via the CONTROL pin. Its internal reference and error amplifier enable tight regulation across −40°C to +85°C ambient temperature.
It operates with a 1.5–5.5 V input range and supports ON/OFF control with logic-level thresholds: VCT(ON) ≥ 1.0 V and VCT(OFF) ≤ 0.4 V. The device achieves 73 dB ripple rejection at 1 kHz and maintains ±55 mV load transient response (1 mA ↔ 150 mA, COUT = 1.0 µF), critical for powering noise-sensitive analog and RF circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Voltage | Fixed 3.4 V ±1.0% (guaranteed accuracy for stable biasing of 3.3 V–3.6 V logic and RF ICs) |
| Dropout Voltage | 130 mV typ. at IOUT = 150 mA (enables operation down to VIN = 3.53 V, extending battery runtime) |
| Quiescent Current | 35 µA typ. at zero load (minimizes standby power loss in always-on subsystems) |
| Output Noise | 35 µVrms typ. (10 Hz–100 kHz, 2.5 V ref; confirms suitability for low-noise analog/RF supply rails) |
| Ripple Rejection | 73 dB typ. at 1 kHz (suppresses switching noise from upstream DC-DC converters) |
| Load Transient Response | ±55 mV typ. (1 mA ↔ 150 mA step, COUT = 1.0 µF; ensures stable core voltage during burst-mode processing) |
| Control Interface | Active-high CONTROL pin with 1.0 V turn-on / 0.4 V turn-off thresholds (compatible with 1.8 V/3.3 V GPIO) |
| Package | SDFN4/SDFN4E (0.8 mm × 0.8 mm × 0.38 mm, 0.6 mg weight; enables <1 mm² footprint on dense mobile PCBs) |
Pinout & Package
SDFN4/SDFN4E is a 4-pin ultra-small plastic mold package with exposed thermal pad (center electrode). Pin 1 (VOUT) and Pin 4 (VIN) are positioned diagonally; Pin 2 (CONTROL) and Pin 3 (GND) occupy the remaining corners. The center thermal pad must be connected to GND for optimal thermal performance and EMI suppression.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VOUT (Pin 1) | Regulated output node | Delivers stable 3.4 V to load; requires 1.0 µF ceramic capacitor placed adjacent to minimize loop inductance |
| CONTROL (Pin 2) | Enable/disable logic input | High (>1.0 V) enables regulation; low (<0.4 V) disables output and activates Auto-discharge path |
| GND (Pin 3) | Ground reference and thermal sink | Common return for all currents; center thermal pad must be soldered to GND plane for 300 mW power dissipation capability |
| VIN (Pin 4) | Input supply connection | Accepts 1.5–5.5 V; requires 0.1 µF ceramic capacitor near pin to suppress high-frequency noise |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low dropout | 130 mV typ. at 3.4 V/150 mA enables use with single-cell Li-ion (3.0–4.2 V) without headroom loss |
| Auto-discharge function | Actively pulls VOUT to GND within microseconds after CONTROL goes low - prevents residual voltage hold-up in power sequencing |
| Ceramic capacitor compatibility | Stable with 0.1 µF CIN and 1.0 µF COUT (ESR < 10 Ω); eliminates need for larger, less reliable tantalum or aluminum electrolytics |
| Low-noise regulation | 35 µVrms noise floor supports clean power for ADCs, PLLs, and RF transceivers without additional filtering |
| Fast load transient recovery | ±55 mV deviation during 1 mA ↔ 150 mA load steps ensures minimal voltage sag during processor wake-up bursts |
| Overcurrent protection | Current-limiting circuit limits output to ~250 mA during short-circuit events - protects IC and upstream source |
Applications
| Smartphone Baseband Power | Wi-Fi/Bluetooth RF Module Supply |
|---|---|
|
Use Scenario: Providing clean, regulated 3.4 V to application processors and modem ICs in LTE/5G smartphones during dynamic load transitions. IC Role / Device Role / Timing Role: Primary LDO for core logic rail with fast transient response and Auto-discharge for controlled power-down sequencing. Use Value: ±55 mV load transient response and 35 µVrms noise prevent digital logic errors and RF desense during burst data transmission. |
Use Scenario: Supplying stable 3.4 V to 2.4 GHz/5 GHz Wi-Fi and Bluetooth transceivers in compact IoT edge devices. IC Role / Device Role / Timing Role: Low-noise post-regulator following a buck converter, enabling RF sensitivity and spectral purity. Use Value: 73 dB ripple rejection suppresses switching artifacts from upstream DC-DC, preserving EVM and ACLR performance. |
| Wearable Sensor Hub | Portable Medical Diagnostic Device |
|
Use Scenario: Powering ultra-low-power sensor fusion hubs (accelerometer, gyroscope, HRM) in fitness trackers with multi-day battery life. IC Role / Device Role / Timing Role: Always-on LDO with 35 µA quiescent current and Auto-discharge for rapid system reset between measurement cycles. Use Value: 35 µA IB extends coin-cell battery life beyond 12 months; 0.8 mm × 0.8 mm footprint saves >60% board area vs. standard SOT-23. |
Use Scenario: Delivering precise 3.4 V to analog front-end (AFE) circuits in handheld ECG or pulse oximetry units requiring clinical-grade signal integrity. IC Role / Device Role / Timing Role: Precision LDO with ±1.0% output accuracy and low thermal drift (75 ppm/°C) for stable ADC reference voltage generation. Use Value: ±1.0% accuracy and 75 ppm/°C TCVO ensure <0.5% gain error across −20°C to +50°C operating range, meeting IEC 60601-1 calibration requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LDO regulator applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| R1190H341B-TR-FE | 3.4 V fixed, 300 mA rating, 150 mV dropout (typ.), 45 µVrms noise, SOT-23-5 package (2.9 mm × 2.8 mm) | Larger footprint and higher quiescent current (60 µA) - less suitable for sub-mm² space constraints | Preferred when higher output current headroom or legacy SOT-23 assembly is required |
| MCP1703T-3302E/MB | 3.3 V fixed (not 3.4 V), 250 mA rating, 600 mV dropout (typ. at 250 mA), 30 µVrms noise, SOT-23-3 package | 0.1 V lower output and significantly higher dropout limit usable input range to ≥3.9 V | Select only if 3.3 V tolerance is acceptable and board layout allows larger dropout margin |
Compared with R1190H341B-TR-FE and MCP1703T-3302E/MB, the TCR2EN34,LF(SE) offers the smallest footprint (0.64 mm² vs. 8.12 mm² and 2.4 mm²), lowest dropout at 3.4 V (130 mV vs. 150 mV and 600 mV), and tightest output accuracy (±1.0% vs. ±2.0% and ±2.0%), making it optimal for next-generation portable electronics where size, efficiency, and precision are co-prioritized.
Availability
TCR2EN34,LF(SE) is available at Aetrix Electronics and suitable for smartphone baseband power, Wi-Fi/Bluetooth RF module supply, wearable sensor hub design, portable medical diagnostic devices, and other applications requiring stable component supply with ultra-small form factor and low-noise regulation.
Supply support for TCR2EN34,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor components, with expertise in power management, logic, memory, and discrete devices for consumer, industrial, and automotive markets.
The TCR2EN series targets ultra-compact, low-power portable electronics - engineered specifically for space-constrained applications demanding low dropout, low noise, and fast transient response in sub-1 mm² packages.
FAQ
What is the maximum input voltage rating for the TCR2EN34,LF(SE)?
The TCR2EN34,LF(SE) has an absolute maximum input voltage (VIN) rating of 6.0 V. Operation above this level risks permanent damage. For reliable continuous operation, the recommended input range is 1.5 V to 5.5 V per electrical characteristics testing conditions - ensuring safe margin below the absolute maximum while maintaining regulation across battery discharge curves.
Does the TCR2EN34,LF(SE) require external compensation components?
No, the TCR2EN34,LF(SE) is internally compensated and stable with 0.1 µF ceramic input and 1.0 µF ceramic output capacitors (ESR < 10 Ω). No external resistors, capacitors, or feedback networks are needed - simplifying layout and reducing BOM count for high-volume portable designs.
How does the Auto-discharge function operate in the TCR2EN34,LF(SE)?
When the CONTROL pin is pulled low (<0.4 V), the TCR2EN34,LF(SE) disables regulation and activates an internal discharge switch between VOUT and GND. This rapidly drains stored charge from the output capacitor, bringing VOUT to near-zero volts within microseconds - essential for controlled power-down sequencing in multi-rail systems.
What is the thermal performance of the TCR2EN34,LF(SE) in its SDFN4/SDFN4E package?
The TCR2EN34,LF(SE) in SDFN4/SDFN4E delivers 300 mW power dissipation capability when mounted on a standard FR4 board (40 mm × 40 mm, 1.6 mm thick, 50% copper coverage). Its 0.6 mg mass and exposed thermal pad require direct soldering to a GND plane to achieve this rating - enabling operation up to 85°C ambient at full 200 mA load.
Is the TCR2EN34,LF(SE) RoHS compliant and lead-free?
Yes, the TCR2EN34,LF(SE) is RoHS compliant and lead-free, as confirmed by Toshiba's official product documentation and environmental compliance statements. The "LF" suffix explicitly denotes lead-free plating, and the device meets EU RoHS Directive 2011/65/EU requirements for restricted substances.
TCR2EN34,LF(SE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 4-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Positive
- Output Type:
- Fixed
- Number of Regulators:
- 1
- Voltage - Input (Max):
- 5.5V
- Voltage - Output (Min/Fixed):
- 3.4V
- Voltage - Output (Max):
- -
- Voltage Dropout (Max):
- 0.18V @ 150mA
- Current - Output:
- 200mA
- Current - Quiescent (Iq):
- 60 µA
- Current - Supply (Max):
- -
- PSRR:
- -
- Control Features:
- Enable
- Protection Features:
- Over Current
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-SDFN (0.8x0.8)
TCR2EN34,LF(SE FAQ
1.How can I place an order for TCR2EN34,LF(SE through Aetrix?
Please submit a Request for Quotation (RFQ) for TCR2EN34,LF(SE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TCR2EN34,LF(SE reliable?
The price and inventory of TCR2EN34,LF(SE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCR2EN34,LF(SE is usually 5 days.
3.What payment methods are accepted for TCR2EN34,LF(SE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCR2EN34,LF(SE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TCR2EN34,LF(SE?
TCR2EN34,LF(SE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TCR2EN34,LF(SE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TCR2EN34,LF(SE?
For technical support, including TCR2EN34,LF(SE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCR2EN34,LF(SE requirements.
6.How does Aetrix verify that TCR2EN34,LF(SE is sourced from the original manufacturer or authorized distributors?
All TCR2EN34,LF(SE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCR2EN34,LF(SE meets industry standards.
7.What is the process for return or replacement of TCR2EN34,LF(SE?
All TCR2EN34,LF(SE units undergo pre-shipment inspection (PSI). If there is an issue with TCR2EN34,LF(SE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TCR2EN34,LF(SE part is unused and in its original packaging.
Return procedure for TCR2EN34,LF(SE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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