Toshiba Semiconductor and Storage TCR2EN36,LF(SE

Overview

TCR2EN36,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 3.6 V fixed-output CMOS low dropout (LDO) voltage regulator in an ultra-small SDFN4/SDFN4E package (0.8 mm × 0.8 mm × 0.38 mm), delivering up to 200 mA with 130 mV typical dropout at 3.0–3.6 V output, ±1.0% output accuracy, and 35 µV_rms output noise - designed for power management in space-constrained portable electronics such as cellular phones and wearables.

For engineers reviewing the TCR2EN36,LF(SE) datasheet, TCR2EN36,LF(SE) pinout, TCR2EN36,LF(SE) application, or TCR2EN36,LF(SE) equivalent, key selection criteria include its 130 mV dropout at 3.6 V/150 mA, 35 µV_rms noise performance, Auto-discharge function, on/off control interface, and compatibility with 0.1 µF input / 1.0 µF ceramic output capacitors.

Technical Context

The TCR2EN36,LF(SE) implements a CMOS-based LDO architecture with integrated overcurrent protection and an active Auto-discharge circuit that rapidly discharges the output capacitor when disabled via the CONTROL pin. Its internal reference and error amplifier enable high DC accuracy (±1.0% for V_OUT ≥ 1.8 V) and tight load regulation (±30 mV across 1–150 mA).

It operates with a quiescent current of only 35 µA (typ.) in active mode and drops to 0.1 µA (typ.) in standby, supporting battery-sensitive applications. The device achieves 73 dB ripple rejection at 1 kHz and maintains stable operation with ceramic capacitors due to optimized phase compensation - no ESR requirements beyond <10 Ω.

Key Specifications

Pinout & Package

TCR2EN36,LF(SE) uses the ultra-compact SDFN4/SDFN4E package (0.8 mm × 0.8 mm × 0.38 mm, 0.6 mg weight), featuring a bottom-exposed thermal pad (to be connected to GND for optimal thermal performance). Pin assignment is verified per Toshiba's top-view diagram and electrical specifications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TCR2EN36,LF(SE), the XC6210B362MR-G offers functional equivalence but sacrifices board-area efficiency and discharge control, while the BD3572EFJ-ME2 trades ultra-miniaturization for enhanced thermal protection - making TCR2EN36,LF(SE) optimal where space, noise, and controlled shutdown are critical.

Availability

TCR2EN36,LF(SE) is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor subsystems, portable medical monitors, and IoT edge node MCUs requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for TCR2EN36,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor solutions, with global R&D and manufacturing infrastructure focused on power management, logic, memory, and discrete devices.

The TCR2EN series belongs to Toshiba's CMOS Linear Integrated Circuit line, engineered specifically for ultra-compact, low-noise, low-quiescent-current LDO regulation in battery-powered portable electronics.

FAQ

What is the maximum input voltage rating for TCR2EN36,LF(SE)?

The absolute maximum input voltage for TCR2EN36,LF(SE) is 6.0 V. However, the recommended operating range is 1.5 V to 5.5 V per electrical characteristics testing conditions. Exceeding 5.5 V may compromise reliability or trigger overvoltage stress not covered by standard qualification tests.

Does TCR2EN36,LF(SE) require external components for stable operation?

Yes - TCR2EN36,LF(SE) requires a 0.1 µF ceramic capacitor at VIN and a 1.0 µF ceramic capacitor at VOUT, both placed as close as possible to their respective pins. These capacitors ensure stability, transient response, and noise suppression; no additional compensation network is needed.

How does the Auto-discharge function operate in TCR2EN36,LF(SE)?

When the CONTROL pin is driven LOW (≤0.4 V), TCR2EN36,LF(SE) disables regulation and activates an internal discharge transistor between VOUT and GND. This rapidly drains residual charge from the output capacitor, preventing unintended wake-up or latch-up in downstream circuitry during power-down sequences.

What is the dropout voltage of TCR2EN36,LF(SE) at full 200 mA load?

At 3.6 V output and 150 mA load (the highest tested condition in datasheet tables), TCR2EN36,LF(SE) exhibits 130 mV typical dropout. At 200 mA, dropout increases slightly - extrapolating from the 3.0–3.6 V curve, it remains ≤180 mV (max), ensuring reliable operation down to VIN ≈ 3.78 V.

Is TCR2EN36,LF(SE) compatible with lead-free reflow soldering processes?

Yes - TCR2EN36,LF(SE) is rated for lead-free reflow soldering per JEDEC J-STD-020. Its SDFN4/SDFN4E package supports peak reflow temperatures up to 260°C (MSL Level 1), and the "LF" in the part number explicitly denotes lead-free termination and RoHS compliance.