Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Toshiba Semiconductor and Storage TCR2LN11,LF(SE

Part No.:
TCR2LN11,LF(SE
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Voltage Regulators - Linear, Low Drop Out (LDO) Regulators
Package:
4-XFDFN Exposed Pad
Datasheet:
AetrixTCR2LN11,LF(SE.pdf
Description:
LDO REG VOUT=1.1V I=200MA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,900

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TCR2LN11,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a fixed-output 1.1 V CMOS low dropout regulator with ultra-low quiescent current (2 μA max), 200 mA output capability, and SDFN4 package (0.8 mm × 0.8 mm × 0.38 mm), designed for power management in space-constrained portable electronics such as cellular phone baseband ICs and wearable sensors.

For engineers reviewing the TCR2LN11,LF(SE) datasheet, TCR2LN11,LF(SE) pinout, TCR2LN11,LF(SE) application, or TCR2LN11,LF(SE) equivalent, key selection criteria include dropout voltage at 150 mA (760 mV typ.), ±1.0% output accuracy (for VOUT ≥ 1.8 V; note 1.1 V falls under ±18 mV spec), auto-discharge functionality, and compatibility with 0.1 μF ceramic input/output capacitors.

Technical Context

The TCR2LN11,LF(SE) implements a CMOS-based LDO architecture with integrated on/off control input and internal pull-down resistor between CONTROL and GND, enabling reliable shutdown without external components. It features overcurrent protection and auto-discharge via internal 20 Ω discharge path when disabled.

Its regulation loop supports stable operation with minimal external capacitance-only 0.1 μF ceramic capacitors required at both VIN and VOUT-and maintains output accuracy across −40°C to +85°C ambient temperature, with temperature coefficient of 75 ppm/°C.

Key Specifications

ParameterValue and Actual Design Meaning
Output VoltageFixed 1.1 V ±18 mV (−40°C to +85°C), enabling precise biasing of low-voltage logic and RF front-end circuitry.
Max Output Current200 mA continuous, sufficient for powering microcontrollers, sensors, or Bluetooth SoCs in compact wearables.
Quiescent Current1.0–2.0 μA (max at IOUT = 0 mA), minimizing battery drain in always-on IoT endpoints.
Dropout Voltage760 mV (typ.) at 150 mA load, allowing operation from 1.86 V input-critical for single-cell Li-ion or coin-cell systems.
Input Voltage Range1.5 V to 5.5 V, supporting wide-input battery-powered applications including partial discharge states.
PackageSDFN4 (0.8 mm × 0.8 mm × 0.38 mm, 0.6 mg), enabling high-density PCB layouts where board area is constrained to <0.64 mm².
Control LogicActive-high CONTROL pin with VCT(ON) = 1.0–5.5 V and VCT(OFF) = 0–0.4 V, simplifying direct GPIO interfacing without level-shifting.

Pinout & Package

TCR2LN11,LF(SE) uses the ultra-compact SDFN4 surface-mount package (0.8 mm × 0.8 mm × 0.38 mm) with exposed center thermal pad recommended to be connected to GND for optimal thermal performance and EMI suppression.

Pin/TerminalCircuit RoleDesign Meaning
VINInput Power SupplyAccepts 1.5–5.5 V DC input; requires 0.1 μF ceramic decoupling capacitor placed adjacent to pin.
VOUTRegulated OutputDelivers stable 1.1 V ±18 mV; connects directly to load with 0.1 μF ceramic capacitor near pin for stability.
GNDGround ReferenceCommon return path for input, output, and control circuits; must be low-impedance and tied to center thermal pad.
CONTROLEnable/Disable InputActive-high digital control: >1.0 V enables regulator; <0.4 V disables with auto-discharge activation.

Key Features

FeatureDesign Value
Ultra-low quiescent current2 μA max at zero load ensures >10-year battery life in coin-cell–powered remote sensors.
Auto-discharge function20 Ω internal discharge path rapidly clears VOUT capacitance upon shutdown, preventing residual voltage hold-up in sequenced power systems.
Ceramic capacitor compatibilityStable with 0.1 μF input/output ceramics-eliminates need for larger tantalum or aluminum electrolytics, reducing BOM count and footprint.
Integrated CONTROL pull-downInternal resistor ties CONTROL to GND, ensuring default-off state during power-up or floating GPIO conditions-no external pull-down required.
Overcurrent protectionCurrent-limiting circuit prevents damage during short-circuit events while maintaining safe junction temperature under sustained overload.

Applications

Smart WearablesIoT Sensor Nodes

Use Scenario: Powering ultra-compact fitness trackers with optical heart-rate sensors and BLE radio.

IC Role / Device Role / Timing Role: Primary 1.1 V supply for ARM Cortex-M0+ MCU and analog front-end.

Use Value: 760 mV dropout allows operation down to 1.86 V input-extending usable battery range from single-cell LiPo (3.0–1.8 V).

Use Scenario: Battery-powered environmental sensor node transmitting temperature/humidity data every 5 minutes.

IC Role / Device Role / Timing Role: Always-on LDO supplying real-time clock and low-power MCU in deep-sleep mode.

Use Value: 2 μA quiescent current enables >12-year battery life on CR2032, validated per IEC 60086-3 standards.

Portable Medical DevicesMobile Baseband ICs

Use Scenario: Compact glucose monitor using electrochemical sensing requiring stable low-noise bias.

IC Role / Device Role / Timing Role: Precision 1.1 V reference supply for ADC driver and sensor excitation circuit.

Use Value: ±18 mV output tolerance and 75 ppm/°C drift ensure measurement repeatability across clinical operating temperatures (0–40°C).

Use Scenario: Powering application processor I/O rails in LTE smartphone platforms with tight layout constraints.

IC Role / Device Role / Timing Role: Secondary LDO for 1.1 V core interface voltage in multi-rail PMIC subsystem.

Use Value: 0.64 mm² SDFN4 footprint matches fine-pitch BGA routing requirements, eliminating need for discrete bypass capacitors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Torex XC6210B112MR-GSame 1.1 V output, but 1.0 μA quiescent current (lower), 300 mA rating (higher), SOT-25 package (larger: 2.9 mm × 2.8 mm).Higher output current suits burst-mode transceivers; larger package eases hand-soldering but increases PCB area by 10×.Select when higher load headroom or manual assembly is prioritized over miniaturization.
Ricoh RP111Q111D-TR-F1.1 V output, 250 nA quiescent current (ultra-low), 150 mA rating (lower), DFN1006-4 package (0.98 mm × 0.98 mm - 20% larger footprint).Superior battery longevity for decade-scale deployments; reduced current capability limits use with peak-loaded peripherals.Select for ultra-long-life applications where 150 mA peak load suffices and 0.1 mm² area penalty is acceptable.

Compared with TCR2LN11,LF(SE), the XC6210B112MR-G offers greater current headroom in a less space-efficient package, while the RP111Q111D-TR-F delivers significantly lower quiescent current at the cost of reduced output capability and slightly larger footprint-making TCR2LN11,LF(SE) the optimal balance of size, efficiency, and load capacity for high-density portable designs.

Availability

TCR2LN11,LF(SE) is available at Aetrix Electronics and suitable for smart wearables, IoT sensor nodes, portable medical devices, and mobile baseband ICs requiring stable component supply with guaranteed long-term manufacturability and RoHS-compliant sourcing.

Supply support for TCR2LN11,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-efficiency semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on miniaturization, energy efficiency, and reliability.

The TCR2LN series was developed specifically for ultra-compact, battery-powered portable electronics-prioritizing ultra-low quiescent current, minimal external component count, and sub-1 mm² packaging to enable next-generation wearables and edge sensors.

FAQ

What is the output voltage tolerance of TCR2LN11,LF(SE) across temperature?

The TCR2LN11,LF(SE) has an output voltage tolerance of ±18 mV over the full operating temperature range (−40°C to +85°C), as specified in the Electrical Characteristics table for VOUT < 1.8 V. This corresponds to ±1.64% accuracy at 1.1 V and ensures stable biasing for low-voltage logic and analog circuits without requiring post-regulation trimming.

Does TCR2LN11,LF(SE) require external components for stability?

No, the TCR2LN11,LF(SE) is internally compensated and operates stably with only 0.1 μF ceramic capacitors at both VIN and VOUT pins. Toshiba explicitly validates this configuration in the Application Note, eliminating need for external resistors, compensation networks, or larger bulk capacitors-reducing BOM cost and PCB area.

How does the auto-discharge function work in TCR2LN11,LF(SE)?

When the CONTROL pin is driven below 0.4 V (OFF state), the TCR2LN11,LF(SE) activates an internal 20 Ω discharge path between VOUT and GND. This rapidly discharges output capacitance-typically clearing 0.1 μF within ~20 μs-preventing unintended wake-up or latch-up in power-sequenced systems, and is confirmed in the Electrical Characteristics table under "Discharge on resistance RSD".

What is the maximum allowable input voltage for TCR2LN11,LF(SE)?

The absolute maximum input voltage for TCR2LN11,LF(SE) is 6.0 V, as defined in the Absolute Maximum Ratings table. However, for reliable continuous operation, the recommended maximum is 5.5 V (VIN ≤ 5.5 V at Tj = 25°C), which aligns with the Electrical Characteristics test condition and ensures safe power dissipation within the 300 mW limit on standard FR4 PCBs.

Can TCR2LN11,LF(SE) be used with input voltages below 1.5 V?

No-TCR2LN11,LF(SE) requires a minimum input voltage of 1.5 V, as specified in the Electrical Characteristics table under "Input voltage VIN". Attempting operation below this threshold results in unregulated output or dropout failure, since the internal CMOS pass device cannot maintain conduction at lower gate-source voltages.

TCR2LN11,LF(SE Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
TCR2LN
Package/Case:
4-XFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Output Configuration:
Positive
Output Type:
Fixed
Number of Regulators:
1
Voltage - Input (Max):
5.5V
Voltage - Output (Min/Fixed):
1.1V
Voltage - Output (Max):
-
Voltage Dropout (Max):
1.28V @ 150mA
Current - Output:
200mA
Current - Quiescent (Iq):
2 µA
Current - Supply (Max):
-
PSRR:
-
Control Features:
Enable
Protection Features:
Over Current
Operating Temperature:
-40°C ~ 85°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
4-SDFN (0.8x0.8)

TCR2LN11,LF(SE FAQ

1.How can I place an order for TCR2LN11,LF(SE through Aetrix?

Please submit a Request for Quotation (RFQ) for TCR2LN11,LF(SE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TCR2LN11,LF(SE reliable?

The price and inventory of TCR2LN11,LF(SE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCR2LN11,LF(SE is usually 5 days.

3.What payment methods are accepted for TCR2LN11,LF(SE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCR2LN11,LF(SE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TCR2LN11,LF(SE?

TCR2LN11,LF(SE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TCR2LN11,LF(SE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TCR2LN11,LF(SE?

For technical support, including TCR2LN11,LF(SE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCR2LN11,LF(SE requirements.

6.How does Aetrix verify that TCR2LN11,LF(SE is sourced from the original manufacturer or authorized distributors?

All TCR2LN11,LF(SE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCR2LN11,LF(SE meets industry standards.

7.What is the process for return or replacement of TCR2LN11,LF(SE?

All TCR2LN11,LF(SE units undergo pre-shipment inspection (PSI). If there is an issue with TCR2LN11,LF(SE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TCR2LN11,LF(SE part is unused and in its original packaging.

Return procedure for TCR2LN11,LF(SE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TCR2LN11,LF(SE Tags

  • TCR2LN11,LF(SE
  • TCR2LN11,LF(SE PDF
  • TCR2LN11,LF(SE Datasheet
  • TCR2LN11,LF(SE Specifications
  • TCR2LN11,LF(SE Images
  • Toshiba Semiconductor and Storage
  • Toshiba Semiconductor and Storage TCR2LN11,LF(SE
  • Buy TCR2LN11,LF(SE
  • TCR2LN11,LF(SE Price
  • TCR2LN11,LF(SE Distributor
  • TCR2LN11,LF(SE Supplier
  • TCR2LN11,LF(SE Wholesale
Related Products
MIC5504-1.8YM5-TR
MIC5504-1.8YM5-TR

Microchip Technology

MIC5504-3.3YM5-TR
MIC5504-3.3YM5-TR

Microchip Technology

MIC5365-3.0YC5-TR
MIC5365-3.0YC5-TR

Microchip Technology

MIC5365-1.8YC5-TR
MIC5365-1.8YC5-TR

Microchip Technology

MIC5365-2.5YC5-TR
MIC5365-2.5YC5-TR

Microchip Technology

MIC5365-3.3YC5-TR
MIC5365-3.3YC5-TR

Microchip Technology

MIC5365-3.3YD5-TR
MIC5365-3.3YD5-TR

Microchip Technology

MIC5317-3.3YM5-TR
MIC5317-3.3YM5-TR

Microchip Technology

TLV1117LV33DCYR
TLV1117LV33DCYR

Texas Instruments

MIC5317-3.3YMT-TZ
MIC5317-3.3YMT-TZ

Microchip Technology

MIC5528-3.3YMT-TR
MIC5528-3.3YMT-TR

Microchip Technology

TLV75801PDRVR
TLV75801PDRVR

Texas Instruments

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER