Toshiba Semiconductor and Storage TCR2LN12,LF(SE

Overview

TCR2LN12,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 1.2 V fixed-output CMOS low dropout (LDO) voltage regulator with ultra-low quiescent current (2 μA max), 200 mA output capability, and SDFN4 package (0.8 mm × 0.8 mm × 0.38 mm). It features overcurrent protection, auto-discharge, and supports ceramic input/output capacitors as small as 0.1 μF - optimized for space-constrained portable electronics such as wearables and IoT sensors.

For engineers reviewing the TCR2LN12,LF(SE) datasheet, TCR2LN12,LF(SE) pinout, TCR2LN12,LF(SE) application, or TCR2LN12,LF(SE) equivalent, key selection criteria include its 1.2 V ±1.0% output accuracy (at ≥1.8 V; note TCR2LN12 is 1.2 V, so ±18 mV per spec), 680 mV typical dropout at 150 mA, −40°C to +85°C operating range, and on/off control interface enabling low-power system sequencing.

Technical Context

The TCR2LN12,LF(SE) implements a CMOS-based LDO architecture with integrated pass transistor, precision bandgap reference, and error amplifier - delivering stable regulation under light-load conditions where quiescent current is critical. Its CONTROL pin accepts TTL-compatible logic levels (ON threshold ≥1.0 V, OFF threshold ≤0.4 V) and includes internal pull-down to GND.

Dropout voltage scales with output voltage: at 1.2 V output and 150 mA load, typical V_DO is 680 mV (max 1230 mV over temperature), enabling operation from as low as 1.88 V input. The device uses no external compensation and remains stable with 0.1 μF ceramic capacitors due to internal phase compensation design.

Key Specifications

Pinout & Package

TCR2LN12,LF(SE) is housed in the ultra-small SDFN4 plastic mold package (0.8 mm × 0.8 mm × 0.38 mm, 0.6 mg typical weight), with wettable flank side terminals for automated optical inspection (AOI) and enhanced solder joint reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TCR2LN12,LF(SE), the XC6210B122MR-G offers lower quiescent current but requires PCB redesign due to SOT-25 size and missing control/discharge functions; the BD3572EFJ-ME2 provides better thermal margin but increases standby power by 25% and occupies 25× more board area.

Availability

TCR2LN12,LF(SE) is available at Aetrix Electronics and suitable for wearable health sensors, BLE beacon modules, industrial wireless nodes, and portable medical diagnostics requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for TCR2LN12,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-efficiency, miniaturized semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on power management and analog ICs.

The TCR2LN series targets ultra-low-power portable electronics, delivering CMOS LDO regulators that combine nanoscale packaging, sub-μA quiescent operation, and integrated system-level features like auto-discharge and logic-controlled enable.

FAQ

What is the output voltage tolerance of TCR2LN12,LF(SE) across temperature?

The TCR2LN12,LF(SE) has an output voltage tolerance of ±18 mV over the full operating temperature range (−40°C to +85°C), as specified in the Electrical Characteristics table for V_OUT < 1.8 V. This corresponds to ±1.5% of nominal 1.2 V, ensuring stable biasing for low-voltage digital cores and precision analog circuits without requiring external trimming.

Does TCR2LN12,LF(SE) require external compensation components?

No, TCR2LN12,LF(SE) is internally compensated and designed for unconditional stability with 0.1 μF ceramic input and output capacitors. The datasheet explicitly confirms compatibility with low-ESR ceramics (recommended ESR < 10 Ω), eliminating the need for external resistors or capacitors in the feedback path and reducing bill-of-materials complexity.

How does the auto-discharge feature operate in TCR2LN12,LF(SE)?

When the CONTROL pin is driven LOW, TCR2LN12,LF(SE) activates an internal 20 Ω discharge path between VOUT and GND, collapsing the output voltage within microseconds. This prevents back-powering of upstream circuitry or unintended wake-up of downstream loads - a critical function in battery-powered systems where residual charge on output capacitors could cause leakage or false triggering.

What is the maximum allowable input voltage for TCR2LN12,LF(SE)?

The absolute maximum input voltage for TCR2LN12,LF(SE) is 6.0 V, as defined in the Absolute Maximum Ratings table. However, the recommended operating range is 1.5 V to 5.5 V. Exceeding 5.5 V may trigger overvoltage stress even if within absolute limits, and sustained operation above this range risks accelerated degradation per Toshiba's reliability guidelines.

Can TCR2LN12,LF(SE) be used with tantalum or aluminum electrolytic capacitors?

While TCR2LN12,LF(SE) is optimized for 0.1 μF ceramic capacitors, it can operate with tantalum or aluminum electrolytic types if their ESR falls within the 1–10 Ω range and capacitance meets minimum stability requirements. However, Toshiba explicitly recommends ceramics for size, reliability, and ESR consistency - tantalum use introduces risk of surge current failure during startup and reduced lifetime at high temperatures.