Toshiba Semiconductor and Storage TCR2LN13,LF(SE

Overview

TCR2LN13,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 1.3 V fixed-output CMOS low dropout (LDO) voltage regulator with ultra-low quiescent current (2 μA max), 200 mA output capability, and SDFN4 package (0.8 mm × 0.8 mm × 0.38 mm). It features overcurrent protection, auto-discharge, and supports ceramic input/output capacitors as small as 0.1 μF - ideal for space-constrained portable electronics like wearable sensors and IoT edge nodes.

For engineers reviewing the TCR2LN13,LF(SE) datasheet, TCR2LN13,LF(SE) pinout, TCR2LN13,LF(SE) application, or TCR2LN13,LF(SE) equivalent, key selection criteria include its 1.3 V output accuracy (±1.0% at 1.8 V+, extrapolated to ±18 mV at 1.3 V), 600 mV max dropout at 150 mA, −40°C to 85°C operating range, and on/off control interface enabling system-level power sequencing in battery-powered designs.

Technical Context

The TCR2LN13,LF(SE) implements a CMOS-based LDO architecture with integrated P-channel pass transistor, enabling low dropout voltage and minimal quiescent current across load and temperature. Its CONTROL pin accepts TTL-compatible logic levels (ON: 1.0–5.5 V; OFF: 0–0.4 V) and includes internal pull-down to GND, eliminating external biasing components.

It operates with stable regulation using only 0.1 μF ceramic capacitors on both input and output, thanks to internal compensation optimized for low-ESR ceramics (recommended ESR < 10 Ω). The device delivers 1.3 V output with ±18 mV initial accuracy and 75 ppm/°C temperature coefficient, supporting precision analog and RF subsystems requiring clean, low-noise supply rails.

Key Specifications

Pinout & Package

TCR2LN13,LF(SE) uses the SDFN4 ultra-small plastic mold package (0.8 mm × 0.8 mm × 0.38 mm) with exposed thermal pad (center electrode, to be connected to GND or left open per layout requirements).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with R1190J131B-TR-FE and MCP1703T-1302E/MB, the TCR2LN13,LF(SE) uniquely combines ultra-small SDFN4 size, 2 μA quiescent current, and integrated auto-discharge - making it optimal for miniaturized, long-life, and multi-rail-coordinated applications where every micron and microamp matters.

Availability

TCR2LN13,LF(SE) is available at Aetrix Electronics and suitable for wearable health monitors, BLE peripheral modules, industrial wireless nodes, smart home motion detectors, and ultra-compact IoT edge sensors requiring stable component supply with tight lead-time predictability.

Supply support for TCR2LN13,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-efficiency, miniaturized semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on power management and analog integration.

The TCR2LN series targets ultra-low-power portable electronics, delivering CMOS LDO regulators optimized for battery longevity, board-space efficiency, and seamless integration with modern low-voltage SoCs and sensors.

FAQ

What is the guaranteed output voltage tolerance for TCR2LN13,LF(SE) across temperature?

The TCR2LN13,LF(SE) guarantees ±18 mV output voltage tolerance (±1.39% of 1.3 V) over the full −40°C to 85°C operating temperature range, as specified in the Electrical Characteristics table under "Output voltage" for VOUT < 1.8 V. This tolerance is independent of line/load variations and reflects initial accuracy plus temperature drift.

Does TCR2LN13,LF(SE) require an external pull-up resistor on the CONTROL pin?

No - the TCR2LN13,LF(SE) integrates a 0.1 μA internal pull-down current between CONTROL and GND, ensuring a defined LOW state when the pin is left floating. An external pull-up is unnecessary unless active HIGH assertion with faster rise time or noise immunity is required in noisy environments.

Can TCR2LN13,LF(SE) operate with input voltage below 1.5 V?

No - the Absolute Maximum Ratings specify 1.5 V as the minimum input voltage (VIN) for safe operation. Below 1.5 V, regulation is not guaranteed, and the device may enter dropout or fail to enable; design margins should maintain VIN ≥ 1.5 V at all times, including battery sag under load.

What is the maximum allowable power dissipation for TCR2LN13,LF(SE) on a standard FR4 PCB?

The TCR2LN13,LF(SE) has a rated power dissipation of 300 mW when mounted on a 40 mm × 40 mm double-sided FR4 board (1.6 mm thick, ~50% copper coverage per side). Derating is required above 25°C ambient; at 85°C, maximum dissipation drops to approximately 120 mW based on the provided thermal curve.

Is the center thermal pad on the SDFN4 package of TCR2LN13,LF(SE) electrically connected?

The center electrode (thermal pad) of the TCR2LN13,LF(SE) SDFN4 package is not internally connected to any circuit node - it is electrically isolated and intended solely for thermal conduction. Toshiba recommends connecting it to GND for improved heat dissipation and mechanical reliability, though leaving it open is also acceptable per datasheet guidance.