Toshiba Semiconductor and Storage TCR2LN19,LF(SE

Overview

TCR2LN19,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 1.9 V fixed-output, 200 mA CMOS low dropout (LDO) regulator in ultra-small SDFN4 package, featuring 2 μA max quiescent current, 350 mV typical dropout at 150 mA, and ±1.0% output accuracy - designed for power management in space-constrained portable electronics such as cellular handsets and wearables.

For engineers reviewing the TCR2LN19,LF(SE) datasheet, TCR2LN19,LF(SE) pinout, TCR2LN19,LF(SE) application, or TCR2LN19,LF(SE) equivalent, key selection criteria include ultra-low IB for battery longevity, ceramic capacitor compatibility (0.1 μF input/output), auto-discharge functionality, on/off control interface, and thermal performance under 85°C ambient operation.

Technical Context

The TCR2LN19,LF(SE) implements a CMOS-based LDO architecture with integrated P-channel pass transistor, enabling low dropout and minimal quiescent current across −40°C to +85°C. Its control input supports active-high enable logic with internal pull-down, and auto-discharge path activates when disabled to rapidly discharge output capacitance.

It operates with input voltage range 1.5–5.5 V and delivers stable 1.9 V output with load regulation ≤30 mV (1–150 mA) and line regulation ≤15 mV (VOUT+0.5 V ≤ VIN ≤ 5.5 V). Overcurrent protection limits output current without latch-up, and thermal shutdown is not specified - consistent with its 150°C junction limit and 300 mW board-mounted power dissipation rating.

Key Specifications

Pinout & Package

TCR2LN19,LF(SE) uses the SDFN4 ultra-small plastic mold package (0.8 mm × 0.8 mm × 0.38 mm) with exposed center pad for thermal conduction. The center electrode must be connected to GND or left open per design requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TCR2LN19,LF(SE), the XC6219B192MR-G offers lower IB but sacrifices auto-discharge and miniaturization, while the BD3572EFJ-ME2 trades ultra-low IB and SDFN4 size for robustness and higher current - making TCR2LN19,LF(SE) optimal for ultra-compact, long-life portable designs where rapid rail discharge is required.

Availability

TCR2LN19,LF(SE) is available at Aetrix Electronics and suitable for cellular handset RF modules, wearable health sensors, IoT edge nodes, portable medical diagnostics, and other applications requiring stable component supply with ultra-low power consumption and minimal PCB footprint.

Supply support for TCR2LN19,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and analog ICs for industrial, automotive, and consumer applications.

The TCR2LN series targets ultra-compact, battery-sensitive portable electronics - delivering high-performance LDO regulation in sub-1 mm² packages with industry-leading quiescent current and ceramic capacitor compatibility.

FAQ

What is the maximum input voltage rating for TCR2LN19,LF(SE)?

The TCR2LN19,LF(SE) has an absolute maximum input voltage of 6.0 V, but its recommended operating input voltage range is 1.5 V to 5.5 V. Operation above 5.5 V risks exceeding absolute maximum ratings and may cause permanent damage. For reliable 1.9 V output, VIN should remain ≥2.25 V to accommodate the 350 mV typical dropout at full load - ensuring TCR2LN19,LF(SE) maintains regulation across battery discharge profiles.

Does TCR2LN19,LF(SE) require external components to operate?

Yes, TCR2LN19,LF(SE) requires two external 0.1 μF ceramic capacitors: one between VIN and GND, and another between VOUT and GND. These are mandatory for stability and transient response. No external resistors or compensation networks are needed - the internal compensation is optimized for 0.1 μF ceramics. The CONTROL pin may be directly driven by a GPIO; no pull-up resistor is required due to the internal pull-down.

How does the auto-discharge feature work in TCR2LN19,LF(SE)?

When the CONTROL pin is pulled low (≤0.4 V), TCR2LN19,LF(SE) disables the pass transistor and activates an internal discharge switch between VOUT and GND. This provides a 20 Ω typical discharge path, rapidly collapsing the output voltage to near-zero within microseconds - critical for systems requiring strict power sequencing or zero-residual-voltage sleep states. The feature is intrinsic to TCR2LN19,LF(SE) and requires no external circuitry.

What is the thermal performance of TCR2LN19,LF(SE) on a standard PCB?

TCR2LN19,LF(SE) is rated for 300 mW power dissipation when mounted on a 40 mm × 40 mm FR4 board with 50% copper coverage on both sides. At 150 mA load and 2.5 V input (0.6 V drop), power dissipation is 90 mW - well within limits. Junction temperature rise is ~25°C above ambient under those conditions. The SDFN4 package's exposed center pad must be soldered to a thermal pad for optimal heat transfer - otherwise, thermal resistance increases significantly and derating is required.

Is TCR2LN19,LF(SE) compatible with lead-free reflow processes?

Yes, TCR2LN19,LF(SE) is qualified for lead-free reflow soldering per JEDEC J-STD-020. Its SDFN4 package supports peak reflow temperatures up to 260°C for 30 seconds. The "LF" in the part number explicitly denotes lead-free finish, and the device complies with RoHS Directive 2011/65/EU. Moisture sensitivity level (MSL) is 1 - unlimited floor life at ≤30°C/60% RH, eliminating bake requirements prior to assembly.