Toshiba Semiconductor and Storage TCR2LN27,LF(SE

Overview

TCR2LN27,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 2.7 V fixed-output, 200 mA CMOS low dropout (LDO) voltage regulator with ultra-low quiescent current (2 μA max), on/off control input, and auto-discharge function in an SDFN4 package (0.8 mm × 0.8 mm × 0.38 mm). It delivers stable power to ultra-compact portable electronics such as cellular phone baseband ICs and wearable sensor nodes where board space and battery life are critical.

For engineers reviewing the TCR2LN27,LF(SE) datasheet, TCR2LN27,LF(SE) pinout, TCR2LN27,LF(SE) application, or TCR2LN27,LF(SE) equivalent, key selection criteria include its 250 mV dropout at 150 mA (2.7 V output), ±1.0% output accuracy (≥1.8 V), compatibility with 0.1 μF ceramic input/output capacitors, and integrated overcurrent protection for space-constrained, low-power embedded systems.

Technical Context

The TCR2LN27,LF(SE) employs a CMOS-based LDO architecture with internal P-channel pass transistor, enabling low dropout and minimal quiescent current across −40°C to +85°C. Its control input supports active-high enable logic (VCT(ON) = 1.0–5.5 V) and includes internal pull-down to GND for default-OFF behavior.

It integrates auto-discharge via internal 20 Ω discharge switch between VOUT and GND when disabled, ensuring rapid output voltage decay. The device operates with input voltages from 1.5 V to 5.5 V and maintains regulation down to VIN = VOUT + 0.25 V at 150 mA - critical for brown-out resilience in Li-ion-powered devices.

Key Specifications

Pinout & Package

SDFN4 package: 4-terminal ultra-small plastic mold package (0.8 mm × 0.8 mm × 0.38 mm); center thermal pad must be connected to GND or left floating per design requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TCR2LN27,LF(SE), the XC6219B272MR-G offers lower quiescent current but lacks auto-discharge and occupies 10× more PCB area; the BD3572EFJ-ME2 provides better thermal handling but demands larger output capacitance and forfeits fast discharge - making TCR2LN27,LF(SE) optimal for miniaturized, battery-sensitive portable medical and communication devices.

Availability

TCR2LN27,LF(SE) is available at Aetrix Electronics and suitable for cellular phone baseband power, wearable health sensor nodes, IoT edge node microcontrollers, portable medical diagnostic devices, and other applications requiring stable component supply with ultra-small footprint and ultra-low power consumption.

Supply support for TCR2LN27,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and analog ICs for consumer, industrial, and automotive markets.

The TCR2LN series targets ultra-compact, battery-powered portable electronics - engineered specifically to replace legacy regulators in space- and energy-constrained applications like smartphones, wearables, and medical sensors.

FAQ

What is the output voltage tolerance of TCR2LN27,LF(SE) over temperature?

The TCR2LN27,LF(SE) guarantees ±1.0% output voltage accuracy for VOUT ≥ 1.8 V across the full operating temperature range (−40°C to +85°C), as confirmed in Toshiba's Electrical Characteristics table. This tolerance applies directly to the 2.7 V output, meaning actual output remains within 2.673 V to 2.727 V under all specified conditions - critical for maintaining timing margins in microcontroller clock domains and ADC reference stability.

Does TCR2LN27,LF(SE) require external components for stable operation?

No, TCR2LN27,LF(SE) achieves stability with only two 0.1 μF ceramic capacitors - one at VIN and one at VOUT - as validated by Toshiba's application circuit and electrical testing. Its internal compensation eliminates need for external resistors or additional capacitors. However, Toshiba recommends keeping ESR below 10 Ω and mounting COUT as close as possible to the VOUT/GND pins to ensure transient response integrity in the TCR2LN27,LF(SE) design.

How does the auto-discharge feature work in TCR2LN27,LF(SE)?

When the CONTROL pin voltage drops below 0.4 V (OFF state), TCR2LN27,LF(SE) activates an internal 20 Ω discharge switch between VOUT and GND, rapidly discharging the output capacitor. This prevents residual voltage from powering downstream circuits or causing unintended wake-up events. The feature is intrinsic to the TCR2LN27,LF(SE) silicon design and requires no external components - distinguishing it from standard LDOs that rely on load leakage or external bleeder resistors.

What is the maximum allowable power dissipation for TCR2LN27,LF(SE) on a standard PCB?

TCR2LN27,LF(SE) has a rated power dissipation of 300 mW when mounted on a standard FR4 board (40 mm × 40 mm, 1.6 mm thick, 50% copper coverage on both sides). At 2.7 V output and 150 mA load, power loss is ~37.5 mW (VIN = 3.0 V), well within limit. Derating is required above +85°C ambient - the TCR2LN27,LF(SE) junction temperature must not exceed 150°C, and thermal design must account for the SDFN4 package's small thermal mass.

Can TCR2LN27,LF(SE) operate with input voltage below 2.7 V?

Yes - TCR2LN27,LF(SE) supports input voltages as low as 1.5 V, but regulation is only maintained when VIN ≥ VOUT + VDO. With 2.7 V output and typical dropout of 250 mV at 150 mA, minimum functional VIN is ~2.95 V. Below that, output follows input (dropout mode). For applications needing sub-2.7 V operation, the TCR2LN27,LF(SE) can still supply unregulated power - however, its specified accuracy and regulation apply only above the dropout threshold.