Toshiba Semiconductor and Storage TCR2LN30,LSF(SE

Overview

TCR2LN30,LSF(SE) from Toshiba Electronic Devices & Storage Corporation is a fixed-output 3.0 V CMOS low dropout (LDO) voltage regulator with on/off control input, ultra-low 2 μA quiescent current (max), 200 mV dropout at 150 mA load, and overcurrent protection - designed for space-constrained portable electronics requiring stable 3.0 V rail generation from higher-input sources such as Li-ion batteries or DC-DC pre-regulators.

For engineers reviewing the TCR2LN30,LSF(SE) datasheet, TCR2LN30,LSF(SE) pinout, TCR2LN30,LSF(SE) application, or TCR2LN30,LSF(SE) equivalent, key selection criteria include its SDFN4 ultra-small package (0.8 mm × 0.8 mm), ±1.0% output accuracy at 3.0 V, support for 0.1 μF ceramic input/output capacitors, auto-discharge functionality, and guaranteed operation across −40°C to +85°C ambient temperature.

Technical Context

The TCR2LN30,LSF(SE) integrates a CMOS pass transistor with internal reference and error amplifier to deliver precise 3.0 V regulation. Its control input enables active high enable logic (VCT(ON) = 1.0–5.5 V) and supports pull-down to GND for reliable shutdown, reducing standby current to ≤1.0 μA.

Dropout performance is optimized for battery-powered systems: at 3.0 V output and 150 mA load, typical dropout is 200 mV (max 280 mV over temperature), enabling operation down to VIN = 3.2 V while maintaining regulation - critical for extending runtime in single-cell Li-ion (3.0–4.2 V) and multi-cell alkaline applications.

Key Specifications

Pinout & Package

TCR2LN30,LSF(SE) uses the SDFN4 ultra-small plastic mold package (0.8 mm × 0.8 mm × 0.38 mm) with exposed thermal pad (center electrode, recommended to connect to GND for optimal thermal performance).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TCR2LN30,LSF(SE), the XC6219B302MR-G offers lower quiescent current but occupies >10× more PCB area, while the BD33IC0WEFJ-ME2 provides higher output current and voltage but sacrifices battery runtime due to 12.5× higher IB - making TCR2LN30,LSF(SE) optimal for space- and energy-constrained 3.0 V applications.

Availability

TCR2LN30,LSF(SE) is available at Aetrix Electronics and suitable for wearable health monitors, Bluetooth LE sensor nodes, smart home remotes, and industrial wireless transmitters requiring stable component supply with tight tolerances and ultra-small form factor.

Supply support for TCR2LN30,LSF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and analog ICs for consumer, industrial, and automotive markets.

The TCR2LN series targets ultra-low-power portable electronics, delivering high-accuracy, low-dropout regulation in the smallest possible footprint - specifically engineered for battery-powered devices where board space and energy efficiency are paramount.

FAQ

What is the output voltage tolerance of TCR2LN30,LSF(SE) over temperature?

The TCR2LN30,LSF(SE) maintains ±1.0% output voltage accuracy for VOUT ≥ 1.8 V, including its 3.0 V nominal output, across the full operating temperature range of −40°C to +85°C. This specification is verified per Toshiba's Electrical Characteristics table and applies under standard test conditions (VIN = VOUT + 1 V, IOUT = 50 mA). The TCR2LN30,LSF(SE) achieves this stability using an internal bandgap reference and precision trimming.

Does TCR2LN30,LSF(SE) require external components for stable operation?

Yes, the TCR2LN30,LSF(SE) requires 0.1 μF ceramic capacitors on both VIN and VOUT pins for stable operation, as confirmed in Toshiba's Application Note and Absolute Maximum Ratings. These capacitors must be placed as close as possible to the respective pins to minimize trace inductance. The TCR2LN30,LSF(SE) is optimized for low-ESR ceramics (recommended ESR < 10 Ω), eliminating need for larger or more expensive electrolytic/tantalum types.

How does the CONTROL pin function on TCR2LN30,LSF(SE)?

The CONTROL pin on TCR2LN30,LSF(SE) is an active-high enable input. When voltage is ≥1.0 V (up to 6.0 V), the regulator operates normally; when ≤0.4 V, it shuts down and activates auto-discharge to rapidly deplete VOUT. A built-in pull-down ensures safe default-off behavior if left floating. Standby current drops to ≤1.0 μA in OFF state - a key feature verified in Toshiba's Electrical Characteristics table.

What thermal performance can be expected from TCR2LN30,LSF(SE) in its SDFN4 package?

The TCR2LN30,LSF(SE) in SDFN4 package has a specified power dissipation limit of 300 mW when mounted on a standard FR4 board (40 mm × 40 mm, 1.6 mm thick, 50% copper coverage). Its thermal resistance (θJA) is not explicitly published, but the 0.38 mm height and exposed center pad (to be connected to GND) enable effective heat transfer. Derating is required above 25°C ambient - e.g., maximum continuous power drops to ~200 mW at 60°C ambient per Toshiba's Power Dissipation graph.

Is TCR2LN30,LSF(SE) RoHS compliant and lead-free?

Yes, TCR2LN30,LSF(SE) is RoHS compliant and lead-free, as confirmed by Toshiba's environmental documentation and product markings. The "SE" suffix in the part number denotes lead-free (Pb-free) and halogen-free construction per JEDEC standards. Full compliance data, including substance declarations and test reports, is available through Toshiba's official website and authorized distributors.