Toshiba Semiconductor and Storage TCR2LN31,LF(SE

Overview

TCR2LN31,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a fixed-output 3.1 V CMOS low dropout (LDO) voltage regulator with ultra-low quiescent current (2 μA max), 200 mA output capability, and integrated on/off control input - designed for power management in space-constrained portable electronics such as cellular phones and wearables.

For engineers reviewing the TCR2LN31,LF(SE) datasheet, TCR2LN31,LF(SE) pinout, TCR2LN31,LF(SE) application, or TCR2LN31,LF(SE) equivalent, key selection criteria include dropout voltage at 150 mA (200 mV typ. for 3.1 V output), ±1.0% output accuracy (≥1.8 V), auto-discharge function, SDFN4 package footprint (0.8 mm × 0.8 mm), and compatibility with 0.1 μF ceramic input/output capacitors.

Technical Context

The TCR2LN31,LF(SE) implements a CMOS-based LDO architecture with internal P-channel MOSFET pass device, enabling low dropout operation and minimal bias current draw across −40°C to +85°C ambient range. Its CONTROL pin supports active-high enable logic with 1.0–5.5 V ON threshold and 0–0.4 V OFF threshold, and includes internal pull-down to GND.

It integrates overcurrent protection and an auto-discharge path (20 Ω typical) that actively discharges the output capacitor when disabled. The regulator maintains stable regulation using only 0.1 μF ceramic capacitors on both input and output, eliminating need for bulk electrolytics or high-ESR components.

Key Specifications

Pinout & Package

SDFN4 package: ultra-small 4-pin plastic mold package (0.8 mm × 0.8 mm × 0.38 mm) with exposed thermal pad (to be connected to GND). Weight: 0.6 mg (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TCR2LN31,LF(SE), the XC6219B312MR-G offers lower IQ but lacks auto-discharge and occupies >14× more board area; the BD33IC0WEFJ-M provides better thermal dissipation but consumes 17× more quiescent current and cannot replace TCR2LN31,LF(SE) without circuit redesign due to voltage and functional mismatch.

Availability

TCR2LN31,LF(SE) is available at Aetrix Electronics and suitable for wearable health monitors, Bluetooth LE modules, smart card readers, and industrial wireless sensors requiring stable component supply, long-term lifecycle support, and ultra-miniature packaging.

Supply support for TCR2LN31,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-efficiency, miniaturized semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on power management and analog ICs.

The TCR2LN series targets ultra-low-power portable electronics, delivering CMOS LDO regulators optimized for battery longevity, minimal PCB area, and seamless integration with ceramic capacitors - specifically addressing design constraints in smartphones, wearables, and IoT edge nodes.

FAQ

What is the maximum input voltage rating for TCR2LN31,LF(SE)?

The TCR2LN31,LF(SE) has an absolute maximum input voltage (VIN) rating of 6.0 V. However, its recommended operating input voltage range is 1.5 V to 5.5 V under normal conditions. Exceeding 5.5 V may trigger internal protection mechanisms or degrade reliability, especially at elevated temperatures. Always maintain VIN within the specified operating range for TCR2LN31,LF(SE) to ensure long-term stability and compliance with Toshiba's derating guidelines.

Does TCR2LN31,LF(SE) require an external resistor on the CONTROL pin?

No, TCR2LN31,LF(SE) does not require an external resistor on the CONTROL pin. It features an internal pull-down connection between CONTROL and GND, ensuring default-disable behavior when left unconnected. The CONTROL pin accepts direct logic-level signals (0–0.4 V for OFF, 1.0–5.5 V for ON) and draws only 0.1 μA typical control pull-down current - making it compatible with GPIOs of ultra-low-power MCUs without additional biasing components.

Can TCR2LN31,LF(SE) operate with a 0.1 μF output capacitor only?

Yes, TCR2LN31,LF(SE) is fully stable with a 0.1 μF ceramic output capacitor (COUT), provided its ESR is below 10 Ω - a specification met by standard X5R/X7R MLCCs. This eliminates need for larger bulk capacitors or ESR-tuning networks. Stability is verified across full load (0–200 mA) and temperature (−40°C to +85°C) ranges per Toshiba's application note, confirming robust performance in high-density layouts where TCR2LN31,LF(SE) is deployed.

What is the dropout voltage of TCR2LN31,LF(SE) at 200 mA load?

The dropout voltage of TCR2LN31,LF(SE) is not characterized at 200 mA in the official datasheet; specifications are guaranteed up to 150 mA, where VDO = 200 mV (typ.) and 280 mV (max) at Tj = −40°C to +85°C. At 200 mA, VDO increases beyond rated limits - Toshiba recommends limiting continuous output current to 150 mA for guaranteed dropout performance. For 200 mA operation, verify thermal derating and voltage margin in final layout using TCR2LN31,LF(SE)'s thermal resistance and power dissipation data.

Is the thermal pad on the SDFN4 package of TCR2LN31,LF(SE) electrically connected?

Yes, the exposed thermal pad on the SDFN4 package of TCR2LN31,LF(SE) is internally connected to GND. Toshiba explicitly specifies that the center electrode (thermal pad) must be connected to GND or left open - but grounding is strongly recommended to ensure optimal thermal performance (PD = 300 mW rating) and electrical stability. Failure to solder the pad to a sufficient GND copper area reduces power handling capability and may cause thermal shutdown or parameter drift during sustained 150 mA operation.