Toshiba Semiconductor and Storage TCR2LN32,LF(SE

Overview

TCR2LN32,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a fixed-output 3.2 V, 200 mA CMOS low dropout (LDO) voltage regulator with ultra-low quiescent current (2 μA max), on/off control input, and auto-discharge function-designed for space-constrained portable electronics requiring stable low-power biasing, such as cellular phone baseband ICs and wearable sensor nodes.

For engineers reviewing the TCR2LN32,LF(SE) datasheet, TCR2LN32,LF(SE) pinout, TCR2LN32,LF(SE) application, or TCR2LN32,LF(SE) equivalent, key selection criteria include dropout voltage at 150 mA (200 mV typ.), ±1.0% output accuracy (for VOUT ≥ 1.8 V), SDFN4 package footprint (0.8 mm × 0.8 mm), ceramic capacitor compatibility (0.1 μF IN/OUT), and overcurrent protection behavior.

Technical Context

The TCR2LN32,LF(SE) integrates a CMOS pass transistor with internal reference, error amplifier, and control logic enabling precise regulation under light-load conditions. Its ultra-low IB enables battery life extension in always-on subsystems, while the CONTROL pin supports active high enable (VCT(ON) = 1.0–5.5 V) and auto-discharge via internal 20 Ω discharge path when disabled.

It operates across −40°C to +85°C with input voltage range 1.5–5.5 V and delivers 3.2 V output with line regulation ≤15 mV and load regulation ≤30 mV. Dropout is specified at 200 mV (typ.) for IOUT = 150 mA, confirming suitability for single-cell Li-ion or multi-cell alkaline supply rails where VIN margin is limited.

Key Specifications

Pinout & Package

SDFN4 package: ultra-small 4-pin plastic mold with exposed thermal pad (center electrode); dimensions 0.8 mm × 0.8 mm × 0.38 mm; weight 0.6 mg (typ.). Thermal pad must be connected to GND for optimal power dissipation and EMI performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TCR2LN32,LF(SE), the XC6210B322MR-G offers lower typical quiescent current but adds design complexity for discharge control, while the BD3985FVM-3.2TR trades 25% larger PCB area for marginally better thermal performance-neither matches the combination of 0.64 mm² footprint, ±1.0% accuracy, and integrated auto-discharge in the TCR2LN32,LF(SE).

Availability

TCR2LN32,LF(SE) is available at Aetrix Electronics and suitable for portable medical diagnostics, wearable health monitoring, and industrial wireless sensor networks requiring stable component supply, long-term lifecycle assurance, and ultra-miniature packaging.

Supply support for TCR2LN32,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-efficiency, miniaturized semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on power management and analog integration.

The TCR2LN series was developed specifically for ultra-low-power portable electronics-prioritizing nanoscale packaging, sub-μA quiescent operation, and ceramic capacitor compatibility to reduce system size and extend battery life.

FAQ

What is the guaranteed output voltage accuracy of the TCR2LN32,LF(SE) across temperature?

The TCR2LN32,LF(SE) guarantees ±1.0% output voltage accuracy for its 3.2 V nominal output across the full operating temperature range of −40°C to +85°C. This specification applies under standard test conditions (IOUT = 50 mA, VIN = VOUT + 1 V), and is confirmed in the Electrical Characteristics table of the official Toshiba datasheet. The TCR2LN32,LF(SE) achieves this stability using an internal bandgap reference and trimmed error amplifier, making it suitable for precision analog loads without external calibration.

Does the TCR2LN32,LF(SE) require external components for stable operation?

No, the TCR2LN32,LF(SE) is designed for minimal external components: only two 0.1 μF ceramic capacitors-one at VIN and one at VOUT-are required for stable regulation. Toshiba specifies these values explicitly and validates stability with X5R/X7R dielectrics having ESR <10 Ω. No external resistors, compensation networks, or bypass capacitors beyond CIN/COUT are needed, simplifying layout and reducing BOM count. The TCR2LN32,LF(SE) does not require feedforward or RC compensation.

How does the auto-discharge function operate in the TCR2LN32,LF(SE)?

When the CONTROL pin voltage drops below 0.4 V (logic low), the TCR2LN32,LF(SE) disables regulation and activates an internal 20 Ω discharge path between VOUT and GND. This rapidly discharges the output capacitor-typically clearing 3.2 V to <100 mV within tens of microseconds-preventing unintended wake-up or latch-up in downstream circuits. The TCR2LN32,LF(SE) implements this entirely internally; no external FET or resistor is required. Discharge behavior is characterized in the datasheet's "Discharge on resistance RSD" parameter.

What is the maximum allowable input voltage for the TCR2LN32,LF(SE)?

The absolute maximum input voltage for the TCR2LN32,LF(SE) is 6.0 V, as defined in the Absolute Maximum Ratings table. However, the recommended operating range is 1.5 V to 5.5 V-exceeding 5.5 V risks permanent damage even if duration is brief. Operation above 5.5 V violates the device's safe operating area and may trigger overvoltage stress on the internal CMOS pass element. For reliable long-term use, the TCR2LN32,LF(SE) should be supplied within 1.5–5.5 V, with derating applied near temperature extremes.

Can the TCR2LN32,LF(SE) be used with input sources below 2.0 V?

Yes-the TCR2LN32,LF(SE) supports input voltages as low as 1.5 V, making it compatible with partially discharged single-cell Li-ion (≥2.7 V), NiMH (≥1.5 V), or alkaline (≥1.5 V) batteries. At VIN = 1.5 V, the device enters dropout mode and maintains regulation until VIN falls below VOUT + VDO (≈3.4 V for 150 mA). Below 1.5 V, the TCR2LN32,LF(SE) ceases regulation and enters undervoltage lockout. Its wide VIN range enables flexible power architecture design across multiple battery chemistries.