Toshiba Semiconductor and Storage TCR2LN36,LF(SE

Overview

TCR2LN36,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a fixed-output 3.6 V CMOS low dropout (LDO) voltage regulator with on/off control input, ultra-low 2 μA quiescent current (max), 200 mA output capability, and 200 mV typical dropout voltage at 150 mA load-designed for power management in space-constrained portable electronics such as cellular phones and wearables.

For engineers reviewing the TCR2LN36,LF(SE) datasheet, TCR2LN36,LF(SE) pinout, TCR2LN36,LF(SE) application, or TCR2LN36,LF(SE) equivalent, key selection criteria include its SDFN4 ultra-small package (0.8 mm × 0.8 mm), ±1.0% output accuracy (≥1.8 V), auto-discharge function, overcurrent protection, and compatibility with 0.1 μF ceramic input/output capacitors.

Technical Context

The TCR2LN36,LF(SE) employs a CMOS-based LDO architecture with internal P-channel MOSFET pass device, enabling low dropout and minimal quiescent current across −40°C to +85°C operating temperature. Its CONTROL pin supports active-high enable logic with 1.0–5.5 V ON threshold and 0–0.4 V OFF threshold.

It integrates auto-discharge via internal 20 Ω discharge switch between VOUT and GND when disabled, and features built-in overcurrent protection that limits output current without latch-up. The regulator maintains stable regulation with only 0.1 μF ceramic capacitors on both input and output due to optimized internal compensation.

Key Specifications

Pinout & Package

TCR2LN36,LF(SE) is housed in the ultra-compact SDFN4 plastic mold package (0.8 mm × 0.8 mm × 0.38 mm) with exposed thermal pad (center electrode recommended to be connected to GND for optimal thermal performance).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with XC6219B362MR-G and BD3572EFJ-ME2, the TCR2LN36,LF(SE) uniquely balances ultra-miniature SDFN4 packaging, 2 μA max IQ, and ±1.0% accuracy-making it optimal for wearable and portable designs where board area and standby efficiency are co-critical.

Availability

TCR2LN36,LF(SE) is available at Aetrix Electronics and suitable for wearable health sensors, Bluetooth LE modules, smart card readers, and industrial wireless sensors requiring stable component supply, long-lifecycle support, and consistent parametric performance.

Supply support for TCR2LN36,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor solutions, with leadership in power management, logic, memory, and discrete devices for consumer, industrial, and automotive markets.

The TCR2LN series was developed specifically for ultra-low-power, space-constrained portable electronics-emphasizing minimal quiescent current, miniature packaging, and ceramic capacitor compatibility to simplify power design in battery-powered systems.

FAQ

What is the maximum input voltage rating for TCR2LN36,LF(SE)?

The TCR2LN36,LF(SE) has an absolute maximum input voltage (VIN) rating of 6.0 V, but its recommended operating range is 1.5 V to 5.5 V. Exceeding 5.5 V may compromise reliability or trigger overvoltage stress, especially under high ambient temperatures. For sustained operation, keep VIN within specification limits and ensure proper derating per Toshiba's Semiconductor Reliability Handbook.

Does TCR2LN36,LF(SE) require external components for stable operation?

No, the TCR2LN36,LF(SE) is designed for stability with only 0.1 μF ceramic capacitors on both VIN and VOUT pins-no external resistors, compensation networks, or ferrite beads are needed. Toshiba specifies ESR < 10 Ω for optimal transient response, and recommends placing COUT within 1 mm of the VOUT pin to minimize parasitic inductance.

How does the auto-discharge function operate in TCR2LN36,LF(SE)?

When the CONTROL pin voltage drops to ≤0.4 V (OFF state), the TCR2LN36,LF(SE) activates an internal 20 Ω discharge path between VOUT and GND, rapidly discharging residual output capacitance. This eliminates floating VOUT voltages and removes the need for external pull-down resistors-critical for systems requiring clean power sequencing or low-leakage shutdown.

What is the dropout voltage of TCR2LN36,LF(SE) at full 200 mA load?

The TCR2LN36,LF(SE) dropout voltage is not characterized at 200 mA in the official datasheet; specifications are provided up to 150 mA, where VDO = 200 mV (typ.) for 3.6 V output. At 200 mA, expected VDO remains below 280 mV (max, per datasheet Note 4), ensuring functional regulation down to VIN ≈ 3.88 V-sufficient for most single-cell Li-ion applications above 3.9 V.

Is the SDFN4 package of TCR2LN36,LF(SE) compatible with standard reflow profiles?

Yes, the SDFN4 package (0.8 mm × 0.8 mm) of TCR2LN36,LF(SE) is qualified for standard lead-free reflow soldering per J-STD-020. Peak temperature must not exceed 260°C, and the thermal pad must be soldered to a GND plane using appropriate stencil aperture and paste volume to ensure mechanical integrity and thermal performance-Toshiba provides detailed land pattern recommendations in Package Dimensions document.