Toshiba Semiconductor and Storage TCR3DM105,LF(SE

Overview

TCR3DM105,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 1.05 V fixed-output CMOS low-dropout regulator with inrush current protection, 300 mA output capability, 590 mV typical dropout at full load, and 38 μVrms output noise. It serves as a primary power supply for RF transceivers and baseband ICs in compact cellular handsets.

For engineers reviewing the TCR3DM105,LF(SE) datasheet, TCR3DM105,LF(SE) pinout, TCR3DM105,LF(SE) application, or TCR3DM105,LF(SE) equivalent, key selection criteria include guaranteed 1.05 V ±18 mV accuracy at 50 mA, ultra-small DFN4E (1.0 mm × 1.0 mm) package compatibility with 1.0 μF ceramic capacitors, and integrated auto-discharge and over-temperature protection.

Technical Context

The TCR3DM105,LF(SE) employs a CMOS pass transistor architecture enabling low quiescent current (65 μA typ. at 1.0 V output) and fast load transient response (±80 mV deviation under 1 mA ↔ 300 mA step with 1.0 μF COUT). Its control input accepts TTL-compatible logic levels (0–0.4 V OFF, 1.0–5.5 V ON) and includes internal pull-down to GND.

Designed for high-density portable systems, it operates across –40°C to +85°C ambient, supports input voltages from 1.75 V to 5.5 V, and integrates inrush current limiting to prevent input rail sag during power-up-critical for battery-powered devices with shared power rails.

Key Specifications

Pinout & Package

TCR3DM105,LF(SE) uses the ultra-compact DFN4E package (1.0 mm × 1.0 mm × 0.58 mm height, 1.3 mg weight) with exposed thermal pad (center electrode, recommended to connect to GND for optimal thermal performance).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TCR3DM105,LF(SE), XC6210B105MR-G trades 100 mA output headroom and inrush protection for lower unit cost, while RP111N105D-TR-F sacrifices dropout voltage and auto-discharge to fit legacy SOT-23 layouts-neither offers pin-to-pin compatibility.

Availability

TCR3DM105,LF(SE) is available at Aetrix Electronics and suitable for cellular handset baseband power, wearable health sensor hubs, and IoT edge node microcontrollers requiring stable component supply with tight voltage tolerance and ultra-small footprint.

Supply support for TCR3DM105,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with expertise in analog, power management, and logic ICs.

The TCR3DM series targets portable electronics requiring ultra-compact, low-noise, high-accuracy LDOs-specifically engineered for space-constrained battery-powered devices needing inrush control and fast transient response.

FAQ

What is the guaranteed output voltage accuracy of TCR3DM105,LF(SE) across its operating conditions?

The TCR3DM105,LF(SE) guarantees output voltage accuracy of ±18 mV at 50 mA load and 25°C junction temperature. This specification holds across the full –40°C to +85°C operating ambient range, with temperature coefficient of 75 ppm/°C contributing to predictable drift. The TCR3DM105,LF(SE) does not specify tighter tolerance bins; all units meet this ±18 mV limit under defined test conditions.

Does TCR3DM105,LF(SE) require external components for stable operation, and what are the minimum values?

Yes, TCR3DM105,LF(SE) requires 1.0 μF ceramic capacitors on both VIN and VOUT pins for guaranteed stability-no additional ESR requirements beyond Toshiba's recommendation of <10 Ω. The TCR3DM105,LF(SE) datasheet explicitly validates performance with these values and warns against omitting either capacitor, as instability or oscillation may occur. No feedforward or bypass capacitors are needed.

How does the inrush current protection circuit in TCR3DM105,LF(SE) function during power-up?

The TCR3DM105,LF(SE) inrush current protection limits peak input current during startup by controlling the gate slew rate of the internal CMOS pass transistor. This prevents abrupt charging of downstream output capacitance, avoiding input rail collapse-especially critical when powered from weak sources like coin cells or shared battery rails. The TCR3DM105,LF(SE) implements this entirely internally; no external resistor or capacitor is required to activate or tune this feature.

What thermal derating applies to TCR3DM105,LF(SE) when mounted on a standard FR4 PCB?

When mounted on a 40 mm × 40 mm FR4 board with 50% copper coverage per side, the TCR3DM105,LF(SE) has a maximum power dissipation rating of 420 mW at 25°C ambient. Derating is linear at 5.0 mW/°C above 25°C, reaching 0 mW at 109°C ambient. This means at 60°C ambient, usable dissipation drops to 245 mW-corresponding to ~233 mA at 1.05 V output. The TCR3DM105,LF(SE) thermal shutdown activates at 150°C junction temperature as a safety backup.

Can TCR3DM105,LF(SE) be used with input voltages below its nominal dropout threshold, and what happens?

No-TCR3DM105,LF(SE) cannot regulate when VIN falls below VOUT + VDO (590 mV typ. at 300 mA). If VIN drops to, e.g., 1.4 V while powering a 1.05 V load, the output collapses to VIN minus pass transistor saturation voltage (~1.3 V), causing unregulated operation and potential system malfunction. The TCR3DM105,LF(SE) provides no brownout detection or flag; designers must ensure input sources remain ≥1.64 V under worst-case load to maintain regulation.