Toshiba Semiconductor and Storage TCR3DM10,LF(SE

Overview

TCR3DM10,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 1.0 V fixed-output, 300 mA CMOS low-dropout regulator with inrush current protection, auto-discharge, and on/off control input. It delivers stable power to noise-sensitive analog circuits and RF sections in portable electronics, operating with only 590 mV typical dropout at full load and 38 μV_rms output noise.

For engineers reviewing the TCR3DM10,LF(SE) datasheet, TCR3DM10,LF(SE) pinout, TCR3DM10,LF(SE) application, or TCR3DM10,LF(SE) equivalent, key selection criteria include ultra-low quiescent current (65 μA), DFN4/DFN4E 1.0 mm × 1.0 mm package compatibility, ±18 mV output voltage accuracy at 1.0 V, and support for ceramic input/output capacitors as small as 1.0 μF.

Technical Context

The TCR3DM10,LF(SE) implements a CMOS-based LDO architecture with integrated inrush current limiting and active auto-discharge via internal FET discharge path when CONTROL is pulled low. Its feedback loop is optimized for stability with 1.0 μF ceramic capacitors and achieves ±80 mV load transient response under 1 mA ↔ 300 mA step changes.

It features dual protection logic: over-current protection triggers foldback current limiting, while over-temperature shutdown activates at 150°C junction temperature. The CONTROL pin accepts 0–0.4 V for OFF state and 1.0–5.5 V for ON state, with internal pull-down to GND ensuring default-off behavior.

Key Specifications

Pinout & Package

TCR3DM10,LF(SE) uses the ultra-compact DFN4/DFN4E package (1.0 mm × 1.0 mm × 0.58 mm height, 1.3 mg weight) with wettable flank option for automated optical inspection. The exposed center pad must be connected to GND for thermal and electrical performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TCR3DM10,LF(SE), the XC6210B102MR-G offers lower dropout at light loads but sacrifices 100 mA drive capacity and critical protection functions, while the BD3572EFJ-ME2 matches current rating but requires higher input headroom and lacks inrush/auto-discharge - making TCR3DM10,LF(SE) uniquely suited for compact, battery-powered systems demanding robust startup and shutdown behavior.

Availability

TCR3DM10,LF(SE) is available at Aetrix Electronics and suitable for mobile baseband power, wearable sensor hubs, medical patch monitors, industrial edge nodes, and other applications requiring stable component supply with guaranteed long-term manufacturability.

Supply support for TCR3DM10,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with expertise in analog, power management, and logic ICs.

The TCR3DM series was developed specifically for portable and space-constrained electronics requiring ultra-small footprint, low-noise, and intelligent power sequencing - targeting cellular phones, wearables, and medical IoT devices.

FAQ

What is the maximum input voltage rating for TCR3DM10,LF(SE)?

The absolute maximum input voltage for TCR3DM10,LF(SE) is 6.0 V. However, the recommended operating range is 1.75 V to 5.5 V per electrical characteristics testing conditions. Exceeding 5.5 V may trigger overvoltage stress not covered by standard reliability testing, and operation above 6.0 V risks permanent damage. Always maintain VIN within 1.75–5.5 V for guaranteed performance and lifetime compliance.

Does TCR3DM10,LF(SE) require an external resistor to set output voltage?

No, TCR3DM10,LF(SE) is a fixed-output regulator with internally trimmed 1.0 V reference. It does not support adjustable output via external resistors. The output voltage is laser-trimmed during manufacturing and specified as 1.0 V ±18 mV (±1.8%) at 50 mA load and 25°C. Any attempt to modify output via external components will invalidate regulation accuracy and void warranty.

Can TCR3DM10,LF(SE) be used with 0.47 μF output capacitors instead of 1.0 μF?

No - the TCR3DM10,LF(SE) is characterized and guaranteed for stability only with ≥1.0 μF ceramic output capacitance. Using 0.47 μF violates the minimum C_OUT requirement stated in the datasheet and may cause oscillation, excessive overshoot during load transients, or failure to regulate under dynamic conditions. Always use 1.0 μF or higher X5R/X7R ceramic capacitors rated for ≥6.3 V.

How does the auto-discharge function operate in TCR3DM10,LF(SE)?

When the CONTROL pin is driven low (≤0.4 V), the TCR3DM10,LF(SE) activates an internal discharge FET between VOUT and GND, pulling the output voltage down to <100 mV within 1 ms. This function is independent of input voltage and remains active until CONTROL returns high. It ensures rapid, controlled discharge of downstream capacitance - critical for safe multi-rail power sequencing and avoiding back-powering of disabled ICs.

Is the center thermal pad on the DFN4/DFN4E package of TCR3DM10,LF(SE) electrically connected?

Yes - the center pad of the TCR3DM10,LF(SE) DFN4/DFN4E package is internally connected to GND and serves both thermal dissipation and electrical grounding functions. It must be soldered to a dedicated PCB GND plane using at least four thermal vias (0.3 mm diameter) to meet the 420 mW power dissipation rating. Leaving it unconnected degrades thermal performance and may cause premature thermal shutdown under 300 mA load.