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Toshiba Semiconductor and Storage TCR3DM11,LF
- Part No.:
- TCR3DM11,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package:
- 4-UDFN Exposed Pad
- Datasheet:
-
TCR3DM11,LF.pdf
- Description:
- IC REG LINEAR 1.1V 300MA 4DFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,353
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Product details
Overview
TCR3DM11,LF from Toshiba Electronic Devices & Storage Corporation is a 1.1 V fixed-output CMOS low-dropout regulator with inrush current protection, delivering up to 300 mA output current, 550 mV typical dropout at full load, and 38 μVrms output noise - designed for power rail stabilization in space-constrained portable electronics.
For engineers reviewing the TCR3DM11,LF datasheet, TCR3DM11,LF pinout, TCR3DM11,LF application, or TCR3DM11,LF equivalent, this device is selected for ultra-low-noise, fast-transient 1.1 V core supply in battery-powered SoC subsystems where ceramic capacitor compatibility and thermal efficiency under 85°C ambient are critical design requirements.
Technical Context
The TCR3DM11,LF employs a CMOS pass transistor architecture enabling low quiescent current (65 μA typ. at 1.1 V) and stable regulation across -40°C to +85°C. Its integrated inrush current protection circuit limits input surge during power-up, while the auto-discharge function rapidly discharges VOUT when disabled via CONTROL pin.
It operates with only 1.0 μF ceramic input and output capacitors, leveraging internal compensation optimized for DFN4/DFN4E package parasitics. The control logic accepts TTL-compatible ON/OFF thresholds (VCT(ON) ≥ 1.0 V, VCT(OFF) ≤ 0.4 V), supporting direct microcontroller GPIO interfacing without level-shifting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output voltage | Fixed 1.1 V ±18 mV accuracy ensures stable core biasing for 1.1 V I/O or logic rails. |
| Max output current | 300 mA continuous supports mid-power microcontrollers or sensor clusters without external boost. |
| Dropout voltage | 550 mV typ. at 300 mA enables operation down to VIN = 1.65 V - critical for single-cell Li-ion or Li-poly systems. |
| Output noise | 38 μVrms (10 Hz–100 kHz) minimizes jitter in ADC references and RF front-end LDO stages. |
| Load transient response | ±80 mV deviation (1 mA ↔ 300 mA, 1.0 μF COUT) maintains regulation during burst-mode processor activity. |
| Ripple rejection | 70 dB typ. at 1 kHz suppresses switching noise from upstream DC-DC converters feeding the LDO input. |
| Quiescent current | 65 μA typ. at 1.1 V output extends battery life in always-on sensor nodes and wearables. |
| Standby current | 0.1 μA max in OFF state enables ultra-low-power deep-sleep modes in portable devices. |
Pinout & Package
TCR3DM11,LF is housed in an ultra-small DFN4/DFN4E package (1.0 mm × 1.0 mm × 0.58 mm, 1.3 mg), with exposed thermal pad (center electrode) requiring connection to GND for optimal thermal performance and EMI suppression.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIN | Input power supply | Accepts 1.75–5.5 V; requires 1.0 μF ceramic decoupling close to pin for stability. |
| VOUT | Regulated output | Delivers fixed 1.1 V; connects directly to load with 1.0 μF ceramic capacitor to ground. |
| GND | Ground reference | Common return for input/output paths and thermal pad; must be low-impedance plane. |
| CONTROL | Enable/disable input | TTL-compatible: ≥1.0 V enables regulator; ≤0.4 V disables with auto-discharge active. |
Key Features
| Feature | Design Value |
|---|---|
| Inrush current protection | Prevents input voltage sag and system brown-out during cold-start of high-capacitance loads. |
| Auto-discharge function | Actively pulls VOUT to GND within microseconds after CONTROL goes low - eliminates hold-up voltage. |
| Ceramic capacitor support | Stable with 1.0 μF CIN/COUT; eliminates need for bulk tantalum or aluminum electrolytics. |
| Over-current & over-temperature protection | Self-limiting shutdown prevents damage during short-circuit or sustained overload conditions. |
| Pull-down on CONTROL | Internal resistor ensures default-OFF state if CONTROL is left floating - enhances system safety. |
Applications
| Smart Wearable Sensors | Low-Power IoT Edge Nodes |
|---|---|
Use Scenario: Powering MEMS accelerometers and BLE SoCs in fitness trackers with single-cell Li-ion battery. IC Role / Device Role / Timing Role: Primary 1.1 V core LDO supplying digital logic and RF transceiver sections. Use Value: Ultra-low 65 μA quiescent current extends battery runtime beyond 7 days in sleep mode; ±80 mV load transient response prevents BLE packet loss during radio wake-up bursts. |
Use Scenario: Regulating power for sub-GHz wireless sensor nodes deployed in industrial monitoring networks. IC Role / Device Role / Timing Role: Standby-mode LDO providing clean 1.1 V to MCU and LoRa transceiver during periodic wake-up intervals. Use Value: 0.1 μA standby current enables >10-year battery life; inrush protection avoids voltage collapse when supercapacitor-assisted wake-up occurs. |
| Portable Medical Diagnostic Devices | Compact Camera Modules |
Use Scenario: Supplying analog front-end (AFE) and microcontroller in handheld ECG monitors powered by coin-cell batteries. IC Role / Device Role / Timing Role: Low-noise 1.1 V LDO for precision ADC reference and signal chain biasing. Use Value: 38 μVrms output noise ensures <1 LSB error in 12-bit ECG digitization; DFN4 footprint saves PCB area in pen-sized form factors. |
Use Scenario: Powering image sensor and ISP in smartphone auxiliary cameras with tight height constraints. IC Role / Device Role / Timing Role: Compact 1.1 V core regulator for CIS logic and interface circuitry. Use Value: 1.0 mm × 1.0 mm DFN4E package fits beneath camera lens barrels; fast load transient response prevents frame drop during auto-focus motor activation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LDO regulator applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| R1190H111B-TR-FE | 1.1 V output, 300 mA, 250 mV dropout (typ.), but no inrush protection or auto-discharge. | Lacks integrated inrush control - requires external RC network for surge limiting in high-COUT designs. | Choose when lowest possible dropout is prioritized over startup safety features. |
| MCP1804T-1102I/OT | 1.1 V output, 150 mA max, 350 mV dropout (typ.), includes thermal shutdown but no inrush or auto-discharge. | Lower current rating limits use to ultra-low-power peripherals only; not suitable for 300 mA SoC cores. | Select only for sub-150 mA loads where cost sensitivity outweighs feature set completeness. |
Compared with R1190H111B-TR-FE and MCP1804T-1102I/OT, the TCR3DM11,LF uniquely combines 300 mA capability, inrush current protection, and auto-discharge in a 1.0 mm² footprint - making it the only option among the three that fully satisfies simultaneous requirements for high-current, safe startup, and rapid shutdown in space-limited portable systems.
Availability
TCR3DM11,LF is available at Aetrix Electronics and suitable for smart wearable sensors, low-power IoT edge nodes, and portable medical diagnostic devices requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for TCR3DM11,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-efficiency, miniaturized semiconductor solutions for consumer, industrial, and automotive markets, with emphasis on reliability and integration.
The TCR3DM series targets portable electronics requiring ultra-small, low-noise, feature-rich LDOs - specifically engineered to replace legacy regulators in next-generation wearables, IoT endpoints, and compact imaging systems.
FAQ
What is the maximum input voltage rating for TCR3DM11,LF?
The TCR3DM11,LF has an absolute maximum input voltage (VIN) rating of 6.0 V. However, its recommended operating range is 1.75 V to 5.5 V per electrical characteristics testing conditions. Exceeding 5.5 V may compromise long-term reliability even if within absolute maximum ratings - always verify actual application VIN against the 5.5 V operational limit when designing with TCR3DM11,LF.
Does TCR3DM11,LF require external components for stable operation?
No, the TCR3DM11,LF is fully stable with only 1.0 μF ceramic capacitors on both VIN and VOUT pins - no ESR requirements or additional compensation components needed. This simplifies layout and reduces bill-of-materials cost. The internal compensation is optimized for the DFN4/DFN4E package, so TCR3DM11,LF achieves robust phase margin without external resistors or capacitors.
How does the inrush current protection circuit function in TCR3DM11,LF?
The inrush current protection circuit in TCR3DM11,LF actively limits peak input current during power-up by controlling the gate drive slew rate of the internal CMOS pass transistor. This prevents large input voltage droop when charging high-value output capacitors - a key advantage over standard LDOs. The feature is intrinsic to TCR3DM11,LF and requires no external configuration.
Can TCR3DM11,LF be used with a floating CONTROL pin?
Yes - TCR3DM11,LF includes an internal pull-down resistor on the CONTROL pin, ensuring the device remains disabled (OFF state) if the pin is left unconnected. This fail-safe behavior prevents unintended power-up and is confirmed in the datasheet's "Pin Assignment" and "Electrical Characteristics" sections. For guaranteed enable, drive CONTROL ≥1.0 V; for guaranteed disable, drive ≤0.4 V or leave floating.
What thermal performance can be expected from TCR3DM11,LF in a standard FR4 PCB layout?
When mounted on a 40 mm × 40 mm × 1.6 mm FR4 board with 50% copper coverage on both sides, TCR3DM11,LF delivers 420 mW maximum power dissipation at 25°C ambient. At 85°C ambient, derated dissipation drops to ~200 mW. The DFN4/DFN4E package's exposed thermal pad must be soldered to a GND plane to achieve these values - TCR3DM11,LF's thermal resistance (θJA) is 238°C/W under those conditions.
TCR3DM11,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 4-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Positive
- Output Type:
- Fixed
- Number of Regulators:
- 1
- Voltage - Input (Max):
- 5.5V
- Voltage - Output (Min/Fixed):
- 1.1V
- Voltage - Output (Max):
- -
- Voltage Dropout (Max):
- -
- Current - Output:
- 300mA
- Current - Quiescent (Iq):
- 65 µA
- Current - Supply (Max):
- 78 µA
- PSRR:
- 70dB (1kHz)
- Control Features:
- Enable
- Protection Features:
- Over Current, Over Temperature
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-DFN (1x1)
TCR3DM11,LF FAQ
1.How can I place an order for TCR3DM11,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for TCR3DM11,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TCR3DM11,LF reliable?
The price and inventory of TCR3DM11,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCR3DM11,LF is usually 5 days.
3.What payment methods are accepted for TCR3DM11,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCR3DM11,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TCR3DM11,LF?
TCR3DM11,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TCR3DM11,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TCR3DM11,LF?
For technical support, including TCR3DM11,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCR3DM11,LF requirements.
6.How does Aetrix verify that TCR3DM11,LF is sourced from the original manufacturer or authorized distributors?
All TCR3DM11,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCR3DM11,LF meets industry standards.
7.What is the process for return or replacement of TCR3DM11,LF?
All TCR3DM11,LF units undergo pre-shipment inspection (PSI). If there is an issue with TCR3DM11,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TCR3DM11,LF part is unused and in its original packaging.
Return procedure for TCR3DM11,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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