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Toshiba Semiconductor and Storage TCR3DM11,LF(SE
- Part No.:
- TCR3DM11,LF(SE
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package:
- 4-UDFN Exposed Pad
- Datasheet:
-
TCR3DM11,LF(SE.pdf
- Description:
- LDO REG IOUT: 300MA VIN: 6V VOUT
- Quantity:
- Payment:
- Shipping:
Inventory:9,861
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Product details
Overview
TCR3DM11,LF(SE) from Toshiba Electronic Devices & Storage Corporation is a 1.1 V fixed-output CMOS low-dropout linear regulator with inrush current protection, delivering up to 300 mA output current, 550 mV typical dropout at full load, and 38 μVrms output noise. It serves as a primary power supply for core logic rails in space-constrained portable electronics.
For engineers reviewing the TCR3DM11,LF(SE) datasheet, TCR3DM11,LF(SE) pinout, TCR3DM11,LF(SE) application, or TCR3DM11,LF(SE) equivalent, key selection criteria include ultra-small DFN4E package compatibility, guaranteed 1.1 V ±1.0% output accuracy across temperature, fast ±80 mV load transient response with 1.0 μF ceramic output capacitor, and integrated auto-discharge and over-temperature protection.
Technical Context
The TCR3DM11,LF(SE) employs a CMOS pass transistor architecture enabling low quiescent current (65 μA typ. at 1.1 V) and stable operation with minimal external components. Its control input accepts TTL-compatible logic levels (0–0.4 V OFF, 1.0–5.5 V ON), and internal circuitry enforces inrush current limiting during startup to prevent input rail sag.
Designed for high-density board assembly, the device achieves 70 dB ripple rejection at 1 kHz and maintains regulation down to VIN = 1.75 V while sourcing 300 mA - critical for battery-powered systems operating near end-of-life voltage. The center thermal pad must be connected to GND for thermal performance and electrical stability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output voltage | Fixed 1.1 V ±1.0% (ensures stable core voltage for 1.1 V I/O or logic domains) |
| Max output current | 300 mA continuous (supports microcontrollers, sensors, and RF front-end ICs) |
| Dropout voltage | 550 mV typ. at 300 mA (enables operation from 1.65 V input, extending battery life) |
| Output noise | 38 μVrms (10 Hz–100 kHz) (minimizes jitter in ADC references and PLL power rails) |
| Load transient response | ±80 mV max deviation (1 mA ↔ 300 mA step, COUT = 1.0 μF) (maintains system stability during burst-mode operation) |
| Ripple rejection | 70 dB typ. at 1 kHz (suppresses switching noise from upstream DC/DC converters) |
| Quiescent current | 65 μA typ. at 1.1 V (reduces standby power in always-on sensor nodes) |
| Operating temperature | −40°C to +85°C (qualified for industrial and consumer portable environments) |
Pinout & Package
TCR3DM11,LF(SE) uses the ultra-compact DFN4E package (1.0 mm × 1.0 mm × 0.58 mm, 1.3 mg), featuring an exposed thermal pad on the bottom surface that must be soldered to a GND plane for thermal management and electrical integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIN | Input power supply | Accepts 1.75–5.5 V; requires 1.0 μF ceramic decoupling close to pin |
| VOUT | Regulated output | Delivers stable 1.1 V; connects directly to load with 1.0 μF ceramic output capacitor |
| GND | Ground reference | Common return path; center thermal pad must be connected to GND for thermal dissipation |
| CONTROL | Enable/disable input | TTL-compatible: <0.4 V = OFF (auto-discharge active), >1.0 V = ON; internal pull-down ensures default OFF state |
Key Features
| Feature | Design Value |
|---|---|
| Inrush current protection | Prevents input voltage droop during startup by limiting initial charge current into output capacitor |
| Auto-discharge function | Actively discharges VOUT through internal FET when CONTROL = LOW, ensuring rapid power-down sequencing |
| Ceramic capacitor support | Stable with 1.0 μF input and output ceramics (ESR <10 Ω), eliminating need for bulk tantalum or aluminum electrolytics |
| Over-temperature shutdown | Thermal foldback activates at TJ ≥ 150°C, protecting die during sustained overload or poor PCB thermal design |
| Over-current protection | Current-limiting engages at ~450 mA (typ.), preventing damage during short-circuit or heavy transient loads |
| Pull-down on CONTROL | Internal resistor ties CONTROL to GND, ensuring safe default-OFF state without external components |
Applications
| Wearable Health Sensor Node | Bluetooth LE Audio Earbud MCU Rail |
|---|---|
|
Use Scenario: Compact wearable patch monitors ECG and SpO₂ using ultra-low-power MCU and analog front-end. IC Role / Device Role / Timing Role: Primary 1.1 V supply for ARM Cortex-M0+ core and precision ADC reference. Use Value: Low 38 μVrms noise prevents signal corruption in sub-μV biomedical measurements; 65 μA quiescent current extends battery life beyond 7 days. |
Use Scenario: True wireless stereo earbud with Bluetooth 5.2 SoC and MEMS microphone array. IC Role / Device Role / Timing Role: Dedicated LDO for SoC core domain, isolated from noisy RF and audio switching supplies. Use Value: ±80 mV load transient response maintains core voltage during BLE packet bursts; DFN4E footprint saves >0.8 mm² PCB area per earbud. |
| Industrial IoT Edge Node | Smart Home Motion Detector |
|
Use Scenario: Battery-powered LoRaWAN node with PIR sensor, MCU, and sub-GHz transceiver operating in −40°C to +85°C environments. IC Role / Device Role / Timing Role: Main 1.1 V regulator for MCU and sensor interface, enabled only during wake-up intervals. Use Value: Guaranteed −40°C to +85°C operation ensures reliability in uncontrolled environments; auto-discharge enables clean reset between wake cycles. |
Use Scenario: CE-certified motion detector with passive infrared sensor, low-power MCU, and Zigbee radio. IC Role / Device Role / Timing Role: Power source for MCU and PIR signal conditioning circuitry, activated only upon detection event. Use Value: Inrush current protection prevents false triggers caused by input rail collapse during capacitor charging; 1.1 V output matches MCU's lowest-voltage operating mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-noise, low-dropout regulator applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Torex XC6210B112MR-G | 1.1 V fixed, 200 mA max, 120 mV dropout at 100 mA, no inrush protection or auto-discharge | Lacks integrated inrush limiting and discharge; requires external circuitry for clean power-down sequencing | Choose for cost-sensitive designs where 200 mA suffices and external control of discharge is acceptable |
| Rohm BD3572EFJ-ME2 | 1.1 V fixed, 300 mA, 300 mV dropout at 300 mA, 45 μVrms noise, no inrush circuit | Higher noise and no inrush protection; thermal pad not required for basic operation | Prefer when board-level thermal management is limited and inrush control is handled upstream |
Compared with TCR3DM11,LF(SE), the XC6210B112MR-G offers lower cost but reduced current capability and missing safety features, while the BD3572EFJ-ME2 trades higher noise and no inrush protection for simplified layout - neither provides the integrated inrush + auto-discharge combination critical for reliable portable power sequencing.
Availability
TCR3DM11,LF(SE) is available at Aetrix Electronics and suitable for wearable health monitors, Bluetooth LE audio devices, industrial IoT edge nodes, and smart home motion detectors requiring stable component supply with tight voltage tolerance and ultra-small footprint.
Supply support for TCR3DM11,LF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with expertise in analog, power management, and logic ICs.
The TCR3DM series targets portable and battery-powered applications demanding ultra-small size, low noise, and robust protection features - specifically engineered for space-constrained, high-density PCBs in mobile and edge-sensing devices.
FAQ
What is the guaranteed output voltage accuracy of TCR3DM11,LF(SE) over temperature?
The TCR3DM11,LF(SE) guarantees output voltage accuracy of ±1.0% over the full operating temperature range (−40°C to +85°C), as specified for output voltages ≥1.8 V - and since 1.1 V falls below this threshold, its accuracy is ±18 mV (±1.64% at 1.1 V), verified per Electrical Characteristics Table on page 4 of the official Toshiba datasheet.
Does TCR3DM11,LF(SE) require an external pull-up resistor on the CONTROL pin?
No, TCR3DM11,LF(SE) integrates an internal pull-down resistor on the CONTROL pin, ensuring a defined LOW state at power-up. An external pull-up is unnecessary unless active HIGH enable timing control is needed; the device enters shutdown mode (with auto-discharge active) when CONTROL is left floating or driven below 0.4 V.
Can TCR3DM11,LF(SE) operate with only 1.0 μF ceramic capacitors on input and output?
Yes, TCR3DM11,LF(SE) is fully stable with 1.0 μF ceramic capacitors on both VIN and VOUT, provided their ESR remains under 10 Ω. This eliminates the need for larger electrolytic or tantalum capacitors, directly supporting high-density portable designs as confirmed in the Application Note (page 5) and Absolute Maximum Ratings section.
What thermal considerations apply to the DFN4E package of TCR3DM11,LF(SE)?
The DFN4E package of TCR3DM11,LF(SE) requires the center thermal pad to be soldered to a PCB GND plane for effective heat dissipation. Without this connection, power dissipation is limited to 420 mW only under the specific FR4 board conditions defined in the Absolute Maximum Ratings (page 2); thermal derating is essential above 25°C ambient.
How does the inrush current protection circuit in TCR3DM11,LF(SE) function during startup?
The inrush current protection circuit in TCR3DM11,LF(SE) actively limits the peak current drawn from VIN during initial output capacitor charging, preventing input rail collapse and avoiding false resets in systems sharing the same supply. This behavior is intrinsic to the IC's internal control loop and requires no external components, as documented in the Features section (page 1) and Application Note (page 5).
TCR3DM11,LF(SE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 4-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Positive
- Output Type:
- Fixed
- Number of Regulators:
- 1
- Voltage - Input (Max):
- 5.5V
- Voltage - Output (Min/Fixed):
- 1.1V
- Voltage - Output (Max):
- -
- Voltage Dropout (Max):
- 0.65V @ 300mA
- Current - Output:
- 300mA
- Current - Quiescent (Iq):
- -
- Current - Supply (Max):
- -
- PSRR:
- -
- Control Features:
- Enable
- Protection Features:
- Over Current, Over Temperature
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-DFN (1x1)
TCR3DM11,LF(SE FAQ
1.How can I place an order for TCR3DM11,LF(SE through Aetrix?
Please submit a Request for Quotation (RFQ) for TCR3DM11,LF(SE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TCR3DM11,LF(SE reliable?
The price and inventory of TCR3DM11,LF(SE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCR3DM11,LF(SE is usually 5 days.
3.What payment methods are accepted for TCR3DM11,LF(SE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCR3DM11,LF(SE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TCR3DM11,LF(SE?
TCR3DM11,LF(SE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TCR3DM11,LF(SE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TCR3DM11,LF(SE?
For technical support, including TCR3DM11,LF(SE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCR3DM11,LF(SE requirements.
6.How does Aetrix verify that TCR3DM11,LF(SE is sourced from the original manufacturer or authorized distributors?
All TCR3DM11,LF(SE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCR3DM11,LF(SE meets industry standards.
7.What is the process for return or replacement of TCR3DM11,LF(SE?
All TCR3DM11,LF(SE units undergo pre-shipment inspection (PSI). If there is an issue with TCR3DM11,LF(SE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TCR3DM11,LF(SE part is unused and in its original packaging.
Return procedure for TCR3DM11,LF(SE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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