Toshiba Semiconductor and Storage TCR3DM11,RF(SE

Overview

TCR3DM11,RF(SE) from Toshiba Electronic Devices & Storage Corporation is a 1.1 V fixed-output CMOS low-dropout regulator with inrush current protection, delivering up to 300 mA output current, 550 mV typical dropout voltage at full load, and 38 μVrms output noise. It serves as a power supply rail for baseband processors and RF front-end ICs in compact mobile devices.

For engineers reviewing the TCR3DM11,RF(SE) datasheet, TCR3DM11,RF(SE) pinout, TCR3DM11,RF(SE) application, or TCR3DM11,RF(SE) equivalent, key selection criteria include ultra-small DFN4E package compatibility, guaranteed 1.1 V ±1.0% output accuracy at 50 mA, inrush current limiting for battery-sensitive systems, and ceramic capacitor support (1.0 μF input/output).

Technical Context

The TCR3DM11,RF(SE) employs a CMOS pass transistor architecture enabling low quiescent current (65 μA at 1.1 V output) and stable operation with minimal external components. Its integrated inrush current protection circuit limits peak input current during startup, while the auto-discharge function rapidly discharges the output capacitor when disabled via the CONTROL pin.

This regulator features internal over-current and over-temperature protection, operates across –40°C to +85°C ambient, and maintains fast load transient response (±80 mV deviation under 1 mA ↔ 300 mA step with 1.0 μF COUT). Ripple rejection reaches 70 dB at 1 kHz, supporting clean power delivery to noise-sensitive RF circuits.

Key Specifications

Pinout & Package

TCR3DM11,RF(SE) is housed in an ultra-compact DFN4E package (1.0 mm × 1.0 mm × 0.58 mm height, 1.3 mg weight) with wettable flank side walls for automated optical inspection. The exposed center thermal pad must be connected to GND for optimal thermal performance and EMI suppression.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise LDO regulator applications.

Compared with R1190H111B-TR-FE and MCP1804T-1102I/OT, the TCR3DM11,RF(SE) uniquely integrates inrush current limiting and auto-discharge in a 1.0 mm² footprint - essential for space-constrained, battery-operated RF systems requiring deterministic startup and shutdown behavior.

Availability

TCR3DM11,RF(SE) is available at Aetrix Electronics and suitable for wearable health monitors, Bluetooth audio peripherals, smartwatch displays, and IoT environmental sensors requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for TCR3DM11,RF(SE) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with expertise in analog, power management, and logic ICs.

The TCR3DM series targets portable electronics requiring ultra-small, low-noise, high-efficiency power regulation - specifically engineered for battery-powered RF and sensor subsystems where size, noise, and startup integrity are critical.

FAQ

What is the guaranteed output voltage tolerance for TCR3DM11,RF(SE) across operating conditions?

The TCR3DM11,RF(SE) guarantees ±1.0% output voltage accuracy for output voltages ≥1.8 V; however, for its 1.1 V variant, the specification is ±18 mV (±1.64%) at IOUT = 50 mA and TJ = 25°C. This tighter absolute tolerance ensures predictable performance in precision analog and RF biasing applications where 1.1 V stability directly impacts gain linearity and noise floor. The TCR3DM11,RF(SE) maintains this accuracy across –40°C to +85°C ambient temperatures.

Does TCR3DM11,RF(SE) require external compensation components?

No, the TCR3DM11,RF(SE) is internally compensated and designed to operate stably with only 1.0 μF ceramic capacitors on both input and output pins. Its control loop is optimized for low-ESR ceramics, eliminating the need for series resistors or additional capacitors. This simplifies layout, reduces BOM count, and ensures consistent performance across manufacturing lots without tuning - a key advantage for high-volume portable device production where TCR3DM11,RF(SE) is commonly deployed.

How does the inrush current protection circuit in TCR3DM11,RF(SE) function during power-up?

The TCR3DM11,RF(SE) inrush current protection circuit actively limits the rate of output capacitor charging during startup, preventing peak input current from exceeding safe levels for battery cells or upstream DC/DC converters. Unlike simple soft-start timers, this circuit dynamically adjusts based on VIN and load conditions, ensuring controlled ramp-up even with varying input sources. This behavior is intrinsic to the TCR3DM11,RF(SE) silicon design and requires no external configuration - critical for maintaining system reliability in wearables and hearing aids where TCR3DM11,RF(SE) supplies sensitive analog blocks.

Can the CONTROL pin of TCR3DM11,RF(SE) be driven by a microcontroller GPIO without level-shifting?

Yes, the CONTROL pin of TCR3DM11,RF(SE) accepts logic-high signals from 1.0 V to 5.5 V and logic-low signals from 0 V to 0.4 V, making it directly compatible with 1.8 V, 2.5 V, 3.3 V, and 5 V microcontroller GPIOs. Its internal pull-down ensures safe default-OFF behavior if left unconnected. This eliminates external level-shifters or resistive dividers in designs using TCR3DM11,RF(SE) for sequenced power domains - such as enabling RF transceivers only after baseband initialization completes.

What thermal derating applies to TCR3DM11,RF(SE) when mounted on a standard FR4 PCB?

When mounted on a 40 mm × 40 mm × 1.6 mm FR4 board with 50% copper coverage on both sides, the TCR3DM11,RF(SE) has a maximum power dissipation rating of 420 mW at 25°C ambient. Above 25°C, derating is linear at approximately 6.3 mW/°C - meaning usable power drops to ~290 mW at 45°C ambient. This corresponds to ~260 mA continuous output at 1.1 V under typical board conditions. Designers must verify junction temperature using the 150°C absolute maximum rating and apply appropriate copper pour around the DFN4E thermal pad to sustain full 300 mA loads in TCR3DM11,RF(SE) applications.